真空沉積膜 的英文怎麼說

中文拼音 [zhēnkōngchénjīmó]
真空沉積膜 英文
vacuum deposited film
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 真空 : [物理學] vacuum; empty space; vacuo
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. This film is deposited on the surface of the glass by evaporating crystals, use of cryolite or magnesium fluoride, in a vacuum.

    塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氟化鎂晶體氣化，令其沉積于玻璃表面上。
  2. The film is deposited on the surface of the glass by evaporating crystals, usually of cryolite or magnesium fluoride, in a vacuum.

    塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氧化鎂晶體氣化，令其沉積于玻璃表面上。
  3. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  4. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  5. The results indicate that the optical performance and coating quality have been improved drastically by using ion - assisted deposition technology in the vacuum deposition, in comparison with the traditional thermal vapor deposition

    結果表明，與傳統的熱蒸發鍍膜工藝相比，在真空沉積過程牛採用離子束輔助沉積技術，可以大大提高膜層的光學特性及膜層品質。
  6. Vacuum deposition mask

    真空沉積掩膜
  7. Manufactures pressure sensors, transducers, load cells, accelerometers, force sensors and strain gages from stock. specialist in micro - miniaturization and applications of semiconductor, thin film, metallic foil and hybrid circuit technologies for the measurement of acceleration, force, and pressure in a multitude of environments

    -提供薄膜制備微粉制備真空冶金分子束外延磁控濺射化學氣相沉積電子束鍍膜激光鍍膜甩帶機磁控電弧爐空間環境模擬等設備
  8. The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

    利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。
  9. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  10. Study of crystalline polyaniline thin films deposited by vacuum evaporation

    真空蒸發沉積聚苯胺晶態薄膜的研究
  11. Vacuum deposited film

    真空沉積膜
  12. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  13. The polytetrafluoroethylene ( ptfe ) is used as targets. fluorocarbon films are deposited onto polyimide ( pi ) and polypropyrene ( pp ) substrates, respectively. various discharge conditions ( voltage, vacuum and treating time ) are discussed

    本文利用射頻磁控濺射的方法，以聚四氟乙烯（ ptfe ）為靶材，在聚酰亞胺（ pi ）和聚丙烯（ pp ）基底上沉積氟碳膜，對不同工藝條件（放電功率、真空度、處理時間）進行了探討。
  14. After vaccum annealling in magnetic fileld, the films were studied by grazing incidence x - ray diffraction analysis and scan of x - ray diffraction. the results showed that fe atoms could be separated from cu matrix, which results in the increasing of the interface scattering, and enhance gmr effect

    通過對真空磁場熱處理前後的薄膜的gixa分析及xrd掃描發現，真空磁場熱處理能夠使沉積態薄膜中的fe原子從cu的晶格中定向析出，這使得熱處理后薄膜內部的界面散射增多，能夠有效的提高薄膜的巨磁阻值。
  15. Many processes are used to prepare transparent conductive films, such as magnetron sputtering, vacuum reactive evaporation, chemical vapor depositions, sol - gel, laser - pulsed deposition

    多種工藝可以用來制備透明導電薄膜，如磁控濺射真空反應蒸發、化學氣相沉積、溶膠-凝膠法以及脈沖激光沉積等。
  16. Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer

    利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。
  17. The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method, the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300, the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0. 2 nm - s - 1, of which the substrate temperature has influence on the optical properties of the deposited films notably

    文中首先以tio _ 2薄膜的折射率和消光系數為研究對象，採用l9正交試驗法研究了在k9玻璃上制備高光學質量tio _ 2薄膜的最佳工藝條件。橢圓偏振儀的測試結果表明，制備tio _ 2薄膜的最佳工藝條件為：基片溫度300 ，工作真空2 10 ~ （ - 2 ） pa ，沉積速率0 . 2nm ? s ~ （ - 1 ） ，其中基片溫度對薄膜光學常數的影響最大，該結果具有較好的可重現性。
  18. The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature

    實驗研究了薄膜中的氦含量與濺射真空室氣氛中氦的相對含量、基底偏壓及沉積溫度間的關系。
  19. The results of gmr testing indicate that the gmr effect is much little in the assputtered films, but they will be enhanced after vaccum annealling in magnetic fileld. and we also found that the thickness of the films and the

    磁阻性能測試結果表明，沉積態薄膜的磁阻性能微弱甚至沒有，經過真空磁場熱處理后的薄膜磁阻性能明顯得到提高，並且薄膜厚度與退火溫度均對薄膜的巨磁阻性能有重要影響。
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