真空源 的英文怎麼說
中文拼音 [zhēnkōngyuán]
真空源
英文
vacuum source-
By comparing theoretical predictions with experimental data, one can obtain a valuable information on the form of the qq interaction potential. such information is of great practical interest, since at present it is not possible to obtain the quark - antiquark ( qq ) potential in the whole range of distances from the first principles of qcd
夸克勢模型是其中重要的模型之一，它不僅能研究強子的基態，而且能研究激發態，但是，源於在中和大距離與qcd真空的復雜結構有關的非微擾特徵，還不可能獲得整個距離范圍內的夸克?反夸克相互作用勢。Analyses the source of non - condensable gas and its bad impact on lithium bromide absorption chillers. presents the management methods of air tightness and vacuum degree
摘要分析了機組不凝性氣體的來源，並闡述其對機組的不利影響。介紹了機組氣密性管理和真空度管理的方法。When the field is slowly - varying, the scalar field potential acts like a cosmological constant. in addition to the quintessence models, many other theories for dark energy have been proposed, including models based on super - symmetric gauge theories, super - gravity, small extra dimensions, large extra dimensions, quantum field theory effects in curved space - time. all these models are essentially based on the existence of a mass less scalar field acting at a cosmic scale
除了真空場模型外，科學家亦提出其他解釋黑暗能量的理論，這些模型建基於不同的物理理論或假設，例如超對稱規范理論超重力增加一些小或大的空間維數量子力學在彎曲時空的影響等等，這些理論模型，返本溯源，其實背後都假設存在著一個特性類似於宇宙常數的無質量純量場。Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。Vacuum phase - transition and the energy mechanism of quasars
真空相變與類星體的能源機制The company main product includes : the vacuum electron gun, opticsmembrane level thickness measuring instrument, the electron gunscanning control meter, the high efficiency crystal thyratron pressureregulator, the precise optics with the power source, the electricitycontrol the cabinet, the data acquisition module and so on
公司主要產品有：真空電子槍、光學膜層厚度測量儀、電子槍掃描控制儀、大功率晶閘管調壓器、精密光學用電源、電氣控制櫃、數據採集模塊等。High - purity transition metal evaporation source for uhv
超高真空中使用的高純過渡金屬蒸發源Vacuum tubes require dc voltage sources as well
真空電子管也要求以直流電壓為電源。Like inorganic semiconductor transittors, which displaced vacuum tubes for computation, solid - state lighting of led is a disruptive technology that has the potential to displace vacuum or gas tubes ( like those used in traditional incandescent or fluorescent lamps ) for lighting
固態光源取代傳統真空光源如同晶體管取代傳統真空電子管一樣是破壞性技術創新，將引起照明領域的一場革命。本文的主要工作是研究白光發光二極體及相關的工藝技術。A vacuum interface used for atmospheric pressure ionization ion source was designed to couple with an orthogonal - injection electrospray ionization time - of - flight mass spectrometer ( tofms )
摘要研製了一種大氣壓離子源真空介面，並已將其用於自製高解析度垂直引入式電噴霧電離飛行時間質譜儀。3. the new microwave power supply ( mps ) can work in vacuum and its power measurement is convenient. the output power could be adjusted with the change of control voltage, and the reflecting power could be gotten by measuring the output voltage of attenuator and detector
（ 3 ）可在真空下穩定工作的新型微波源功率的測量較為方便，通過改變控制電壓的大小可以調節輸出功率，通過測量衰減檢波器的輸出電壓信號可實現反射功率的測量。Because of drying in vacuum, it has high speed under low temperature, its dry speed has raise 2 times, save sources, and the heat efficiency is high, especially adapt to material which is heat sensitive and easy oxidized
由於是在真空下乾燥，在較低溫度下有較高速率，比一般乾燥設備速度提高2倍，節約能源，熱利用率高，特別適合熱敏性物料和易氧化物料的乾燥。4. cuhk fully supports the use of renewable energy. the university took the lead in 2004 to complete the first phase of the installation of a solar - powered water heating system in the united college s cheung chuk shan amenities building
中大十分支持利用再生能源，大學率先於2004年在聯合書院張祝珊師生康樂大樓完成第一期真空熱導管式太陽能熱水器工程，而第二期工程亦已於2005年完成。The source is which is placed along with the polished substrate in an evacuated, sealed quartz ampoule.
擴散源與拋光襯底一起置放在抽真空密封的石英管內。< uk > the source is which is placed along with the polished substrate in an evacuated, sealed quartz ampoule. < / uk >
< uk >擴散源與拋光襯底一起置放在抽真空密封的石英管內。 < / uk >Vuv light sources
真空紫外線光源Mainly produce the refractory metal materials including wolfram, molybdenum, tantalum, zirconium, niobium, titanium, nickel and the products ; we undertake the manufacture of the compound materials like titanium, nickel, molybdenum, zirconium stainless steel and the vessels, fasteners, titanium basket, titanium panel, etc. our products are extensively applied in many fields like petrol - chemical, chemical fiber, electronics, electric light source, electric vacuum, fertilizer, pharmaceuticals, glass fiber, electrical medium and galvanization, etc
主要生產鎢鉬鉭鋯鈮鈦鎳等難熔金屬材料及其製品承接鈦鎳鉬鋯不銹鋼等復合材料及容器緊固件鈦網籃鈦種板等製造。公司產品廣泛的應用於石化化纖電子電光源電真空化肥制藥玻璃纖維電介電鍍等諸多領域。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Pulsing vacuum high - pressure steam sterilization is able to fail due to some malfuncltions such as incompletely sealed diaphragm and strip, improperly closed gate and ball valves, unstable steam pressure and hydraulic pressure
脈動真空高壓蒸汽滅菌器在使用過程中出現蒸汽壓力、水源壓力不穩、鍋體膠條、膜片密封不良，門、球閥關閉不嚴等情況易導致滅菌失敗。Vsdv vacuum source or signal dump valve
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