矽氧單體 的英文怎麼說
中文拼音 [xīyǎngdāntǐ]-
For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面,在相同的晶體生長條件下,重摻硼硅單晶氧含量升高,氧沉澱被增強,能形成有效吸雜點,提高矽片機械強度,抑制void缺陷,有利於提高ulsi的成品率。
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