矽片工程 的英文怎麼說
中文拼音 [xīpiāngōngchéng]
矽片工程
英文
silicon wafer engineering-
Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.
光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide
如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes
晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen
在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。But if engineers can figure out how to integrate millions of relativistic gates on a small silicon chip ? and awschalom is working with research groups at intel and hewlett - packard to do just that ? the result could be processors that run much faster than current models do, while consuming far less power and radiating far less heat
不過假如工程師有辦法把幾百萬個相對論性邏輯閘整合在一小塊矽晶片上，其成果可能就是執行速度比當今機種快很多，而功率消耗與熱輻射卻少得多的微處理器；奧沙隆目前正在和英特爾與惠普的研究群合作研發這種晶片。Thermal and welding residual stress often produces in the proceeding of the electronic package, the residual stress release and thermal deformations of the microelectronics will reduce the assemble intensity between the chip and package, and then debase the electrical performance of the assemble circuit, numerous thermal cycling will lead to thermal fatigue or thermal failure of the microelectronics
電子封裝器件在生產的工藝過程中，往往會產生熱殘余應力以及焊接殘余應力，殘余應力的釋放作用及器件在使用過程中的熱變形，會降低集成電路晶元與封裝體的結合強度，進而降低集成電路的電性能，反復的熱循環，將導致器件的熱疲勞失效，嚴重時可導致矽片或陶瓷片破裂，使整個器件遭到破壞。This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe
為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects, ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture
然而這樣一顆單晶棒已經不足以滿足工作需求：它們有太多缺陷分佈在原子晶格之間，這會影響矽的導電能力，而且會在晶片製造過程中帶來麻煩。Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important
四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。The development of solar cells is showing a tendency to improve efficiency and reduce cost. crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none - pollution
主要工作包括三個部分：首先研究了不同溫度的熱退火對于矽片氧碳含量和少子壽命的影響，然後將熱處理過程應用於常規太陽電池的制備工藝，制出太陽電池。During the fabrication or service, if the applied tensile stresses exceed the probabilistic tensile strength of silicon, then failure will occur. even a tiny crack will bring tremendous damage to devices and circuits. especially nowadays, with the increasing of silicon wafer diameter, warpage in heat treatment, defects and dislocations generated in silicon often become critical problems in ulsi devices fabrication
特別在大規模集成電路與器件生產中，一個微小的裂紋就可能導致后道工序中電路與器件的完全損壞；而且在熱處理過程引起的翹曲，使光刻精度下降；在矽片內部產生的氧沉澱及位錯等缺陷，會導致集成電路或器件的漏電流增加，使器件失效。According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。Andes technology corporation has collaborated with mediatek, faraday, the executive yuan development fund and several leading taiwanese universities, leveraging their resources effectively. having recruited a group of senior engineers with extensive product development and management experience from silicon valley in the us, andes is gradually building itself up into taiwans leading soc core provider, integrating software, hardware and system integration capabilities
晶心科技透過產官學合作，擁有來自聯發科智原科技行政院開發基金以及國內大學等豐富資源，目前更網羅一群有矽谷產品開發及管理經驗的資深工程師，正逐步建立國內唯一結合軟硬體及系統整合能力，且專注于系統晶片核心開發的公司。We effectively solve the stress of wafer process and prove the function of the new slicing slurry and lapping slurry in wafer process. research fruit is applied to manufacture
在實驗部分中我們有效地解決了矽片加工的應力問題，驗證了新型切削液和研磨液在矽片加工過程中的明顯作用，並使研究成果投入生產轉化為產品。分享友人