硅摻雜 的英文怎麼說

中文拼音 [guīchānzá]
硅摻雜 英文
silicon doping
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Synthesis of butyraldehyde glycol acetal with h4siw12o40 pan as catalyst

    硅鎢酸摻雜聚苯胺催化劑催化合成丁醛乙二醇縮醛
  2. Catalytic synthesis of butyraldehyde glycol acetal with h4siw6mo6o40 polyaniline

    硅鎢鉬酸摻雜聚苯胺催化合成丁醛乙二醇縮醛
  3. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  4. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  5. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  6. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  7. As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc

    由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。
  8. Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design

    根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。
  9. The preparation of optically active composite is a promising alternative to obtain a kind of new and competitive sensing membrane for fiber optic sensors, and has attracted the global attention. in this thesis, the modified sol - gel sensing membranes based on fluorescence quenching have been prepared by using tetraethoxysilane ( teos ) and dimthyldimethoxysilane ( dds ) as the main material, formamide as the drying control chemical additive ( dcca ), ru ( phen ) 3cl2 and ru ( bpy ) 3cl2 as the indicator. this kind of membranes is crack - free and has low indicator - leaking rate

    本文以四乙氧基硅烷（ teos ） 、二甲基二乙氧基硅烷（ dds ）為主要原料，以甲酰胺為控制乾燥劑，二價釕離子絡合物釕（ ） ?聯吡啶（ ru （ bpy ） _ 3cl _ 2 ）和釕（ ） ?菲咯啉（ ru （ phen ） _ 3cl _ 2 ）為熒光指示劑，採用改進的溶膠凝膠技術，通過添加控制乾燥劑和有機摻雜兩種手段，制備了基於熒光猝滅原理的光纖氧敏感膜。
  10. By using dta, ir and xrd analysis, the result show that : in the gel glass of these two system, the phase change of the zirconia and the alumina are restricted because of the high content of silica which leads to the stabilization of the prepared materials. and the applications of these two materials is introduced briefly. by using absorption spetrum and fluorescence spetra analysis, the result show that : in the gel glass of the nd - doped sio2 - al2o3 gel bulk glass - ceramic, the strongest emmision is at about 1. 06u m, the clustering of nd3 + ion is controlled by the addition of alumina which creates the " cage effect " to nd3 + ion

    同時分別對凝膠進行了dta 、 ir 、 xrd分析，結果表明：對於此兩個系統的凝膠玻璃-陶瓷，由於二氧化硅含量較高，使得氧化鋯及氧化鋁的相變受到約束，從而保證所制備材料的穩定化，同時對兩種材料的應用也作了簡單介紹；對摻釹sio _ 2 - al _ 2o _ 3激光玻璃-陶瓷進行了熒光及吸收光譜分析，結果表明：釹鋁共摻雜二氧化硅玻璃的最強發射處於1 . 06 m左右，加入的少量氧化鋁使釹離子產生「籠效應」 ，阻止釹的團聚。
  11. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  12. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  13. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  14. Moreover, the two - step heat treatment method was utilized in the preparation of the films, the films prepared by the first coating with 550 ? heat - treatment and the second coating with of with 500 ? heat - treatment ( b type films ) were highly c - axis oriented with smooth, dense and uniform surface morphology

    此外，結合高溫和低溫熱處理方法優點的兩步熱處理法得到的b型薄膜同時具有較好的c軸擇優取向性和更為平整均勻的表面形貌。另外，在硅基板上也制備出了良好的c軸擇優取向性的摻雜氧化鋅薄膜。
  15. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  16. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  17. It can increase reversible capacity of 50mah ? g ~ ( - 1 ) ’ s left or right. adding a little amount of zn, the reversible capacity is around 214mah ? g ~ ( - 1 ) after 30cycles

    利用化學反應和高溫還原反應制備了超細金屬摻雜硅碳復合材料，選擇的摻雜金屬為cu 、 ni 、 ag 。
  18. The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state

    單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。
  19. To summarize, intense near uv, violent, blue, green, and red emitting can be obtained in si - based thin films through 0 and n doping

    綜上所述，通過氧、氮摻雜，在硅基薄膜中可獲得近紫外及紫、藍、綠和紅等波段的強熒光，熒光強度取決于制備工藝方法及工藝參數。
  20. The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type. the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon

    本論文的主要內容和結果如下: （ 1 ）借用「熱中子輻照矽片使部分硅嬗變為磷，從而將硅摻雜成n型」的思想，從質子嬗變角度討論了實現zno材料的p型摻雜方案。
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