硅效率 的英文怎麼說
中文拼音 [guīxiàolǜ]
硅效率
英文
silicon efficiency-
The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership
新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本Cells can be made from other, cheaper materials, but these are not as efficient as those made from silicon
其它低廉的材料也可用來製造此種電池，但效率不及硅電池。Many ways of doping have also been reported. at the same time, to reduce the onset voltage and to increase the intensity of electroluminescence ( el ) is all very important for el devices
由於硅的平面集成工藝已相當成熟，所以從工藝兼容性考慮，用硅基材料作為發光器件將是最佳的選擇，而其獲得應用的關鍵是提高發光效率。The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature
本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗That is still poor compared with silicon, but it is a big improvement on what was previously possible
與硅電池相比，導電塑料電池的效率仍然很低，但與原先非硅材料電池的效率相比已有顯著的提高。Although the efficiency of the multicrystal si solar celli s lower than that of monocrystal si, the multicrystal si material is cheaper than monocrystal si, so the multicrystal si module has more potential reducing the cost
盡管多晶硅電池效率比單晶硅太陽電池低約2 ，由於其材料製作成本低於單晶硅材料，因此多晶硅組件比單晶硅組件具有更大的降低成本的潛力。Preparing anti - reflective coating and hydrogen passivation are two key procedures in the process of high efficiency crystalline silicon solar cells
減反射膜的制備和氫鈍化是制備高效率的晶體硅太陽電池的非常重要工序之一。Dangling bonds exist at the surface of porous silicon, which leads to the drop of the light - emitting efficiency. to apply porous silicon into practice, surface modification is necessary
多孔硅表面存在大量的懸掛鍵，容易引起發光效率的降低，行之有效的克服方法是進行表面修飾。Conventional cells of the highest quality, normally made from silicon, now operate at only 18 percent efficiency.
通常質量最好的電池是由硅做成的，它的轉換效率目前僅能達到18。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Experimental study on new material of large molecules organic silicon on efficiency of rainwater catchments
新型高分子有機硅材料集流效率試驗研究However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0Silica heat preservation brick can be used to heat preservation, energy saving, and it also can protect the inner refractory material to enlong the oven life
硅質保溫磚是一種高溫隔熱材料，在工業窯爐上起到了隔熱保溫、降低能耗、提高熱效率的作用，而且還能有效地保護內層主體耐材，延長窯爐的使用壽命。Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. by optimizing the experimental conditions, short - circuit current was increased by 3. 7ma / cm2, the conversion efficiency was increased by 2 %, the stability was improved
在硅薄膜電池的zno ： al al背反射電極應用方面，通過減小靶電壓、適當增加靶距和基片的運行速度來減小對電池的轟擊，改善電池性能，通過優化實驗條件，使電池的短路電流提升了3 . 7ma cm ~ 2 ，效率增加了2 ，穩定性得到改善。Mainly have monocrystalline and polycrystalline solar panel modules with conversion efficiency over 18 %
單晶硅太陽能電池組件和多晶硅太陽能電池組件，轉換效率高達18 % 。Currently, more than 80 % solar cells are made from crystalline silicon, so it is very important to develop high efficiency and low cost crystalline silicon solar cells
目前， 80以上的太陽電池是由晶體硅材料制備而成的，制備高效率低成本的晶體硅太陽能電池對于大規模利用太陽能發電有著十分重要的意義。The crms155p series solar cell module which is encapsulated with the importedpolycrystalline silicon solar cell, has the excellence of high transition efficiency, stable operation quality and good feeble - light domino effect
目前我公司採用進口的多晶硅太陽能電池封裝的crms155系列太陽能組件，具有轉換效率高，性能質量穩定，光效應好等優點。By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。Through parallel experiments, the rules were studied more that the composition of electroless plating solution and reaction condition affected on the reaction of electroless cobalt plating of nano - sian4 with ultrasonic wave, such as " induction period ", the speed of reaction, appearance and morphology of composite powder, the component and phases of the plating et al
通過對比實驗，分別就鍍液組分及其工藝參數對納米氮化硅化學鍍鈷反應孕育期、反應速度、復合粉末外觀、形貌，鍍層成份及相結構的影響規律進行了深入研究。孕育期是反映化學鍍液質量，影響化學鍍效率的重要參數。The flat yarn making machine is adopted micro - processor control, frequency conversion governor and setting and displaying technical data may be fully digitized on the basis of absorbing international advanced techniques. the main parts use quality products. the line enlarges l d ratio and adopts new type of separating screw and widens mixing smelt zone on the extruder screw pot which is specially processed using quality steel, fine plasticized effect, low energy consumption in relation to output
本平膜拉絲機組是我廠在廣泛吸收國外先進拉絲機組技術基礎上，採用微機控制變頻調速及可控硅直流調速等先進技術研製而成的，主要電氣元器件採用國外優質產品，整機結構設計先進控制靈敏運行平穩操作方便安全可靠生產效率高能量消耗低。分享友人