硅晶格 的英文怎麼說
中文拼音 [guījīnggé]
硅晶格
英文
silicon lattice-
The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership
新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本Because a - si films have many advantages, such as simple technology 、 cheap material and carry out great area 、 big scale auto batch produce, high photosensitivity, and so on. at present it gets more and more abroad attention and application
由於非晶硅薄膜具有制備工藝簡單、原材料價格低廉和可實現大面積大規模自動化批量生產及光敏性好等絕對優勢，目前已得到越來越廣泛地重視和應用。Product this getting wet pouch active mt of packaging completely, main raw materials active mt one natural having special crystallization layers of silicate clay ore of form scarce, sublimated and processed and succeeded by special technology, one layer of forms tetrahedron and octahedra chip of it are arranged into six mao net, cause the crystalline grain to expand after absorbing water, pick up the moisture, get rid of oxygen, keeps fresh, anticorro sion, long result function, it is a kind of healthy green environmentally safe product
本品是透濕性小袋包裝的活性mt ，主要原料活性mt是一種天然稀有的具特殊結晶層狀的硅酸鹽粘土礦，經特殊技術提純加工而成，它的層狀四面體和八面體晶片排成六角網格，吸水后引起晶格膨脹，具吸濕、除氧、保鮮、防蝕、長效功能，是一種健康綠色環保產品。Tabular layouts of article characteristics for transistors and thyristors
第19部分:晶體管和可控硅用物品特性表格設計The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state
單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。Due to the change in lattice constant and the distortion of energy band, strained si exhibits great mobility enhancement compared with the conventional si material, and it is the critical reason for the wide application of strained si mosfets
由於晶格常數的改變，應變硅中載流子的遷移率高於普通硅材料，這是應變硅mosfet性能提高的根本原因。Aug 24 ( reuters ) - solar - cell maker china sunergy co ltd ( csun. o : quote, profile, research ) posted a quarterly loss on rising costs for polysilicon, a key raw material, and a drop in average selling price, sending its shares down more than 30 percent
太陽能電池片製造商中電光伏（ csun ） ，公告了第二季度財務報告，因為原材料多晶硅價格上漲，而產品銷售平均價格卻出現下跌，導致它的股價暴跌超過30 %Monocrystalline cells are expensive, and this has led to the development of alternatives, which are described below
單晶硅電池價格比較昂貴，因此也就促使其替代品的發展，如下文所述。Prices of polysilicon have shot up in the recent past as solar cell and semiconductor companies scramble to secure supplies of the key ingredient, leading to supply constraints
多晶硅的價格飛漲，太陽能電池片和半導體公司爭奪原材料，導致供應緊張According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。分享友人