硅膜集成電路 的英文怎麼說

中文拼音 [guīmójíchéngdiànlù]
硅膜集成電路 英文
silicon film ic
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  3. The inductor, which is one of the most important magnetic components, is not only used in lc filter and choke but also in rf communication circuit. the thin film inductor can be integrated with semiconductor components, so far it has not been widely used in these fields, the reason is the limited of thin - film material and substrate, process technology and design technology. designing and fabricating thin film inductor is the key point of this paper

    而作為磁性元器件中最重要的電感，它不僅在lc濾波電路、扼流圈中必不可少，在現代射頻通信電路中也被廣泛使用，特別是能與硅器件一起集成的薄膜電感器，在國際上備受重視，而國內長期以來，由於受薄膜磁芯材料、繞組材料、基片材料，包括製作技術及最為關鍵的設計技術限制，尚未研發出能夠用於這一應用領域的高、中、低頻薄膜電感器。
  4. Our research results are listed in the following items. the use of ps / ops was proposed as a low - loss and low - dielectric - constant inter - layers for passive elements in the ( mmic ). a complete process flow has been developed for ps thick layers up to sooum

    已經取得的研究成果有： a 、論文採用氧化多孔硅作為單片微波集成電路中無源器件低損耗、低介電常數的介質膜，研究開發了厚度達500 m多孔硅的制備技術。
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