硅表面 的英文怎麼說
中文拼音 [guībiǎomiàn]
硅表面
英文
silicon face-
Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma
等離子體對硅表面的低溫大面積氮化The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc. therefore, a scheme is proposed in this paper
由於微機械工藝採用的技術多是半導體工業的硅表面工藝和體硅加工工藝，因此這種傳感器可以大批量製造，且具有低成本、高精度、低驅動、高可靠性、低功耗、佔用空間小、重量輕和響應速度快等優點。Placing a thin layer of insulation between the silicon surface and the transistors protects the transistors from " electrical effects, " leading to higher performance and lower power consumption
在硅表面之間放上很薄的一層絕緣體，可以防止晶體管的「電子效應」 ，這樣可以實現更高的性能和更低的功耗。Organic silicon : silicon oil ( silicon grease, silicon suckling liquid, silicon surfactants ), silane coupling agent ( organic silicon chemistry reagent ), high temperature sulfur rubber, liquid silicon rubber, organic silicon polymer, silicon resin, organic silicon singles, compound etc., organic silicon produce and the related raw material, aid chemical preparation, technique
有機硅：硅油（硅脂、硅乳液、硅表面活性劑） ，硅烷偶聯劑（有機硅化學試劑）高溫硫化橡膠、液體硅橡膠、有機硅聚合物、硅樹脂、有機硅單體、復合物等，有機硅生產相關原料、助劑、技術。Various surface passivations of ps, such as by hydrogen, oxygen, nitrogen and noble metals, have been compared. the pss were formed by photoelectrochemical means
常見的表面修飾方法包括對多孔硅表面進行氫鈍化、氧鈍化、氮鈍化、金屬鈍化等，這些修飾方法各有其特點。All the experiment analyses are presented in chapter 3, including the lodging of negative resistance effect based on the measurement of the parameters of ga - diffusion trans
結構中近硅表面微區域濃度的變化規律， ga擴散過程的三個階段包括預沉積、再分佈和二次氧化，對應于ga在aDangling bonds exist at the surface of porous silicon, which leads to the drop of the light - emitting efficiency. to apply porous silicon into practice, surface modification is necessary
多孔硅表面存在大量的懸掛鍵，容易引起發光效率的降低，行之有效的克服方法是進行表面修飾。Our experiment results showed that the photoluminescence mechanism of porous silicon was ascribed to the co - effect of quantum confinement and the surface materials of porous silicon
以上的多孔硅發光現象不能用單純的量子限域機制進行解釋，實驗結果表明它是由量子限域和多孔硅表面物質共同作用的結果。( 4 ) preliminary investigation of the mechanism of electroless nickel on silicon showed that the catalysis of. silicon surface was acquired by the oxidation of silicon that prompts the deposition of nickel
（ 4 ）對單晶硅表面化學鍍鎳的機理進行了初步的探討，結果表明硅表面的化學鍍催化活性可能是由硅的氧化反應促使鎳離子沉積成鎳核所形成的。By carefully checking the leed pattern, it is found that the " ( 2x2 ) " pattem is actually a combination of the c ( 2 x 2 ) reconstruction from the ersi, island surfaces and the ( 2x l ) reconstruction from the bare si substrae
對（ x2 ）再構的低能電子衍射的仔細研究表明，實驗中觀察到的px2 ）再構實際上是來自於餌硅化物的葉x2 ）再構與來自硅表面的cxi八門2 ）再構的迭加產物。After analysis of the xrd data, an obvious small peak was observed at 29 = 32. 62 ? the experimental results showed that the improved stabilization of the porous silicon layers was due to the formation of sio2 ( 1103 ) structure in the internal surface
Xrd光譜顯示在2口= 32 . 620出現了一個小峰，揭示了經過過氧化氫后處理后多孔硅表面形成了一層二氧化硅（ l10刀）脫，從而提高了多孔硅厚膜的穩定性。Mems optical switch for optical communication is fabrication by silicon surface micromachining technology. surface micromachining technique, based on the standard cmos processes, in the other hand, offers greater flexibility for realizing free - space optical systems on a single chip
Mems光開關是採用表面微細機械加工技術製作而成，硅表面微機械加工技術是以cmos集成電路工藝為基礎的，它可以靈活地把光開關集成在一塊矽片上。The different ratio and dosage of composite surfactants were researched about the polymer latex ' s stabilization and structure. afterwards, the emulsion polymerization of tris, mma, and p ( mma - co - ptris ) were carried out. some different monomer ratio copolymer latex and homopolymer latex are prepared by emulsion polymerization used self - made organosilicone monomer - [ tris ( trimethylsiloxy ) silyl ] propylmethacrylate and mma
用ir ， tem ， dma ，水滴接觸角測試等方法表徵所制備的均聚物和共聚物膜發現：採用有機硅表面活性劑與十二烷基硫酸鈉復配使用，用量在6 8 （相對單體量）可得到粒徑分佈均勻且穩定的均聚和共聚乳液。The result showed that the spin coating method was better relatively. the obvious blue shift of pl was found in spectra of the ps / pmma composite prepared with spin coating. compared to the spectra from original ps sample, the luminescence quenching was greatly decreased for ps / pmma composite due to the prevention to ps layer with coated with pmma film and modification of dielectrical penetrability of the medium in quantum threads by the pmma
實驗結果表明，用旋塗法實現的pmma固化后再與多孔硅復合而制得的樣品的結果最好，它與原始的多孔硅樣品相比發光峰發生了藍移而且發光強度下降很小，我們認為pmma層有限的厚度和pmma對多孔硅表面的保護使復合后發光強度下降很小，而且制備的多孔硅pmma復合體系的發光強度幾乎不隨時間而下降。The involved reason was that monocrystalline silicon had a higher smooth and uniform surface
其原因可能是單晶硅表面原子排列非常整齊，具有高度光滑和均勻的表面條件。Surface status and formation of ultrafine silicon dioxide after polymer grafting modification
聚合物接枝改性超細二氧化硅表面狀況及形成機理Reducing atmospheres, such as hydrogen or disassociated ammonia, particularly with low dew - points, may remove the protective silicon oxide protection that forms on silicon carbide
減少部分氣體的含量，比如氫或者是分離出氨，尤其是少量水蒸氣，可能會將碳化硅表面的二氧化硅保護塗層去除。Ftir and xps proved that ptcda and tcpc were attached on the surface of silicon by covalent ; afm and uv - vis showed ptcda and tcpc arranged orderly on surface of silicon ; through raman spectrum, we found that macrocycle molecules stand on surface of silicon, while macrocycle molecules in film by vacuum deposition parallel to silicon surface
紅外光譜和光電子能譜證明了?和酞菁成功的化學鍵合到單晶硅表面， afm和uv - vis吸收光譜表明了?和酞菁單層膜在硅基上呈有序排列。拉曼光譜的研究發現?酐分子大環以一定的角度立於硅基表面，而不是平行於基體表面，與蒸鍍手段得到的?酐膜的堆積形態完全不同。Soap - free polymerization method means monomers ( mma ) polymerize around the surface of nano - silica without soup, absorbed by the force of surface. by the means of tem and potential test, the improvement of dispersal of nano - silica has been proved : particle size of aggregates decreased from 120 - 200nm to 80nm
無皂乳液聚合法是在無乳化劑存在的環境中，利用納米二氧化硅表面的吸附力，單體（ mma ）在其表面進行聚合，包裹納米二氧化硅表面，改善界面狀況。Standard test method for precipitated silica - surface area by multipoint bet nitrogen adsorption
用多點布-埃-特氮氣吸附法對沉積二氧化硅表面面積的標準測試方法分享友人