硅鍺 的英文怎麼說

中文拼音 [guīzhě]
硅鍺 英文
silicon germanium sige
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 鍺 : 名詞[化學] （金屬元素） germanium （ge）
  1. Apart from selenium and vapour-deposited germanium and silicon, glasses are at least diatomic.

    除了硒和汽相沉積的鍺和硅之外，玻璃至少是二原子的。
  2. Doped silicon and germanium are technologically the most important types of semiconducting material.

    添加硅和鍺在工藝上是半導體物質中最重要的類型。
  3. Hydrogenation of polycrystalline sige thin films by hot wire technique

    熱絲法氫處理多晶硅鍺薄膜
  4. Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

    硅和鍺體內少數載流子壽命測定光電導衰減法
  5. 3. a 4. 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0. 35 m sige bicmos process is obtained after debugging with the simulator spectrerf

    3 .基於tsmc的0 . 35微米鍺硅bicmos工藝，採用spectrerf模擬器進行壓控振蕩器的調試和模擬。
  6. The fishkill fab is so up - to - date that it is capable of producing chips with all of the latest acronyms, from copper cmos technology to silicon - on - insulator and low - k dielectrics - all on 300mm wafers

    Fishkill工廠如此先進，可以生產幾乎所有最新的晶元：從銅cmos xs到絕緣硅、硅鍺合金以及low - k絕緣體，所有這些都可以在300mm的晶片上生產。
  7. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively.

    例如，硅和鍺的禁帶寬度分別為11電子伏和065電子伏。
  8. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively

    例如，硅和鍺的禁帶寬度分別為1 1電子伏和0 65電子伏。
  9. In computers, these diodes are primarily germanium or silicon crystals

    在計算機中，這些二極體基本上是鍺或硅晶體二極體。
  10. Ti introduces the silicon - based transistor which soon eclipsed germaninum devices in production volume

    Ti公司開發硅晶體管，從而在生產量上迅速超過鍺晶體管。
  11. In this paper the band - gaps of the different concentration ge - doped czsi were measured, and the band - gap numbers were gotten

    論文中對硅鍺單晶的光學禁帶寬度進行了測試，得出了摻鍺不同濃度下禁帶寬度值。
  12. The images of the single crystals with different ge concentration were gotten by means of afm method. the atomic layer patterns of different crystals were gotten

    利用原子力顯微鏡（ afm ）對不同鍺濃度的硅鍺單晶的形貌進行了觀察，得到了不同單晶的原子層形貌。
  13. Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon

    鍺對重摻硼直拉硅中氧沉澱的影響
  14. In this article we present an easily implemented ( destructive ) method that is able to provide the ge concentration of the sige alloy at the desired depth resolution

    本文提供了一種簡單的執行（損傷的）方法，它可以在期望的縱向解析度下得到鍺硅合金的鍺濃度。
  15. Two methods of coupling photodetector to waveguide are analyzed, and the principle of integration of silicon - based optical waveguide and silicon germanium photodetector is outlined

    分析了硅基光波導與鍺硅光探測器集成用兩種不同的耦合方式，闡明了波導與探測器集成的機理及設計理論基礎。
  16. Devices made with strained epitaxial films of this material can be much faster than devices that exclusively use silicon

    近年來鍺硅合金在高速器件和光電子應用中有大量的可能使用研究。
  17. For an accurate depth profiling of the ge concentration, detailed knowledge of the dependence of the refractive index of the sige alloy as a function of the ge concentration is required

    對於一個準確的鍺濃度縱向分佈來說，需要有鍺硅合金的反射率關系以作為鍺濃度的函數的詳細知識。
  18. Silicon - germanium process, sige process

    硅鍺製程
  19. In the last decade alone, ibm scientists have announced one semiconductor breakthrough after another : copper technology, silicon - on - insulator, silicon germanium, strained silicon, and low - k dielectrics

    在最近10年中， ibm在半導體領域實現了一個又一個的突破：銅技術，絕緣硅，硅鍺合金，應變硅和low - k絕緣體。
  20. Many useful results can be obtained in the investigation on viscosity of si, ge melt by rotary oscillating

    利用回轉振動法對硅、鍺等半導體熔體的粘度進行測試分析，獲得許多有意義的結果。
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