硅面積 的英文怎麼說

中文拼音 [guīmiànjī]
硅面積 英文
silicon area
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 面積 : [數學] area
  1. It focuses on the theory of the mineral functional materials " improving the anti - chloride permeability and the chloride binding. the main achievements of this article include : 1 ) use the technology of xrd, sem, bet, laser particle size distributor etc to test the component, the construction, particle size distributor, specific surface etc of micro - silica, ultra - fined slag, high quality fly ash, meta - kaolin clay, four types of the mineral functional material, theoretically analysis the functions which the four mineral functional minerals act on cement concrete, namely pozzolanicity effect, filling effect, micro - aggregate effect, surface adsorption effect and so bring into play the affect of plastification, lowing of temperature, reinforcement, improvement of durability. base on this analysis we can conclude that the proper diameter of the mineral functional material is 5 m - 15 m, that is blain fineness 4500cm2 / g - 7500cm2 / g

    本論文的主要成果包括以下幾個方面： （ 1 ）採用xrd 、 sem 、 bet 、激光粒度分析儀等多種測試手段，探明了以硅灰，超細磨粒化高爐礦渣，優質粉煤灰及偏高嶺土超細粉等4種超細礦物功能材料的組成、結構、粒度分佈、比表面積等基本性質；從理論上分析了礦物功能材料在混凝土中的4種效應，即火山灰效應、填充密實效應、微集料效應、表面吸附效應，並由此發揮出增塑、溫峰削減（降熱） ，增強及耐久性改善等作用；通過相關理論分析，推導出礦物功能材料的合理粒徑范圍在5 m 15 m ，即勃氏比表面積為4500cm ~ 2 g 7500cm ~ 2 g 。
  2. Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

    等離子體對硅表面的低溫大面積氮化
  3. The extrusion of silica-rich lava, the rooiberg felsite, occurred on a grand scale.

    富於硅氧的巖流及羅依山霏細巖的噴出作用占據了廣大面積。
  4. The qitaihe coal resources isadvantageous, the coal field total area 8, 000 square kilometers, haveverified the geological reserve 1. 7 billion tons, the prospectivereserves 4. 2 billion tons, the coal plant completely, has the cokingcoal, 1 / 3 coking coal, the gas coal, the anthracite and so on 10varieties, by coking coal primarily ; excellent in quality, has theespecially low phosphorus, especially low characteristic and so onsulfur, high heat value, high ash melting point, high silicon content, most is suitable for the coal chemical industry product thedevelopment, is national one of three big protections mining rare coalfields, is the heilongjiang province most important anthraciteproduction base, also is the national important coking coal and thenortheast area biggest high quality coke production base

    七臺河煤炭資源得天獨厚，煤田總面積8000平方公里，已探明地質儲量17億噸，遠景儲量42億噸，煤種齊全，有主焦煤、 1 / 3焦煤、氣煤、無煙煤等10個品種，以主焦煤為主；品質優良，具有特低磷、特低硫、高發熱值、高灰熔點、高硅含量等特點，最適于煤化工產品的開發，是全國三大保護性開采稀有煤田之一，是黑龍江省最重要的無煙煤生產基地，也是國家重要的主焦煤和東北地區最大的優質焦炭生產基地。
  5. We specialized in developing, producing, managing yh series such as betonies clay, inorganic gelatinate silicate, used in betonies clay. we owned 40million ton storage betonies clay hill and covered 168 units area. nowadays, we owned total assets over 50 million, 168 workers including over 20 tech skilled talent

    本公司為專業開發生產經營yh系列有機膨潤土無機凝膠鋁鎂硅酸鹽鑄造用膨潤土的企業擁有儲量4千萬噸膨潤土礦山一座，佔地面積168畝，現有總資產5000餘萬元，員工168人，各類技術人才20餘人， 2006年被省科技廳授予浙江省高新技術企業。
  6. The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership

    新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本
  7. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  8. Because a - si films have many advantages, such as simple technology 、 cheap material and carry out great area 、 big scale auto batch produce, high photosensitivity, and so on. at present it gets more and more abroad attention and application

    由於非晶硅薄膜具有制備工藝簡單、原材料價格低廉和可實現大面積大規模自動化批量生產及光敏性好等絕對優勢，目前已得到越來越廣泛地重視和應用。
  9. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  10. This u has two legs, for a total surface area of 75 square inches

    型硅碳棒有兩段，總輻射面積則為75平方英寸。
  11. A study of pore specific surface area and its correlation with the strength of silica fume cement paste

    硅粉水泥石中的孔比表面積及其與強度的相關性
  12. Use of mineral silicate as adsorbent in wastewater treatment is studied, which refers to its modification with different methods in order to improve the adsorption ability

    摘要國內外許多學者對硅酸鹽吸附劑進行了改性研究，通過增大吸附劑的比表面積、改變表面化學性質、增強離子交換能力以及擴大層間間距等來提高吸附劑對污染物的吸附量。
  13. High spicific surface, tiny granule diameter, goodactivity, can be used as substitute of well cement or silica flour to imporve well quality

    比表面積大，粒徑微小，具有良好的膠凝性能，可替代井油水泥和/或硅灰（漂珠） ，改善固井質量。
  14. Standard test method for silica, precipitated, hydrated - ctab cetyltrimethylammonium bromide surface area

    沉澱的水合硅石的標準試驗方法. ctab表面積
  15. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  16. The worm - like mesoporous materials were synthesized and characterized with tem, x - ray diffraction, nitrogen adsorption / desorption and ft - ir techniques, etc. the results showed that all the samples had larger porediameter than the samples through calcinations under resembled conditions, but the mesopore ordered poorly. ft - ir results showed hexagonal structural character were kept, but xrd, tem results showed that the samples have the structure characteristics of msu - x. it was analysized that all n2 adsorption isotherms of the samples belong to langmuir iv category which is related to mesoporous materials

    Ft - ir光譜表徵結果顯示，經萃取處理后的介孔sio _ 2材料保持了六方的結構特徵；經xrd 、 tem進一步分析，證實所合成的介孔氧化硅材料具有msu - x材料的結構特徵， xrd譜圖表明樣品具有短程有序性：所合成的材料低溫n _ 2吸附測試結果表明，各樣品的n _ 2吸附等溫線均與中孔（介孔）特徵的第類曲線基本相符；由kelvin公式計算得到的孔徑分佈曲線說明，介孔材料具有較為集中的孔徑分佈；各樣品的bet比表面積比較高。
  17. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計，採用自偏置結構和鏡像電流鏡結構，利用運放的輸出電壓作為運放的偏置電壓，節省了偏置電路，降低了功耗;使用低溫度系數的多晶硅高值電阻，降低了電阻溫漂對電路的影響;在電源電壓不變的情況下，為了減小功耗就必須減小工作電流，而增大電阻的阻值能有效地減小工作電流，多晶硅高值電阻的方塊電阻很大，可以節省版圖面積。
  18. Jinzhou shuangling precision casting factory lie on shuangyang town. jinzhou city liaoning prov. it is 13 km away from jinzhou airport. 23 km from jinzhou port. the factory occupies land area of 10 thousands m2. the total asset value is rmb 10 millions. there are more than 300 staffs and 55 of which are engineering. now the factory owns water glass 、 colloidal sillica process to produce about 2000 kinds of precision castings, including mineral mechanical parts that are made of plain carbon steel 、 alloy steel 、 stainless steel more kinds of other metal. the annual production capacity is 2000 tons of precision steel casting

    錦州市雙凌精密鑄造廠位於遼寧省錦州市雙羊鎮內，廠區距錦州機場13公里，錦州港23公里，佔地面積10000平方米，本廠現有職工350人，其中專業技術人員55人，固定資產1000多萬元，工廠擁有先進設備，採用水玻璃、硅溶膠工藝，生產普通鋼、不銹鋼等多種材質， 2000多種礦山機械配件、工程機械配件、汽車配件等精鑄件產品，年生產能力2000噸。
  19. And the value drop to the lowest at ph = 0. 8. as the increase of heat treatment temperature, the pore size distribution peak of sio2 microspheres is very narrow, meanwhile the specific surface area is the smallest before 160 c. the polymer template is removed at 350 c, so the pore structure of sio2 particles has a big change which involve the increase of specific surface area and the broaden of pore size distribution peak. with the continuous raise of temperature the sio2 network will shrink little, as a result the average pore size will decrease, but the specific surface area has no obvious change

    結果發現：二氧化硅膠體顆粒均勻分佈於脲醛聚合物網路中，煅燒去除有機模板后微球表面變粗糙，而粒徑沒有明顯變化； ph值較小時，復合微球中聚合物含量較大，而ph值較大時，得到復合微球結構鬆散，因此熱處理后的二氧化硅微球孔容及平均孔徑都較大，而在ph = 0 . 8時，得到最小值；武漢理工大學碩士學位論文隨著熱處理溫度的變化，小於160時，空分佈較窄，而比表面積較小，在350時，由於有機模板的去除，微球孔結構發生突變，比表面積明顯增大，而孔徑分佈變寬，溫度繼續升高時，二氧化硅網路發生收縮，平均孔徑變小而比表面積由於有機炭化物的完全去除沒有太大變化;微球中的微孔在熱處理過程中處于平衡狀態，分佈沒有太大變化。
  20. And one end of the modifying molecule links substrate through silane molecule, the other end catches tio2 particle with sulfo group, so the film has large surface area and excellent stability

    該修飾分子一端通過硅烷分子連接載體，另一端利用磺酸基來捕捉二氧化鈦粒子，因此二氧化鈦薄膜具有較大的表面積和優異的穩定性。
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