硅靶 的英文怎麼說

中文拼音 [guībǎ]
硅靶 英文
silicon target硅靶儲存管 silicon target storage tube; 硅靶管 silicon target camera tube
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 靶 : 1. （射擊的目標） target 2. （轡革; 韁繩） bridle; halter; reins
  1. Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target

    本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。
  2. By hot pressing, the licoo _ 2 target was produced. different moulds were used in the hot pressing including the graphite mould and the sic mould

    在熱壓法制備licoo _ 2靶材的過程中，使用了石墨模具，碳化硅模具。
  3. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  4. Silicon target vidicon

    硅靶光導攝象管
  5. Detail specification for electronic components. silicon - target vidicon of type sf - 1303

    電子元器件詳細規范. sf - 1303型硅靶視象管可供認證用
  6. The density of this target was 5. 21 g / cm3, which was 94 % of the theoretic density of the licoo _ 2 。 in cold pressing and sintering process different percentage of binder were added to the target and the best percentage was found

    其中使用碳化硅模具，制備出純度和密度較高的熱壓靶材，靶材密度為5 . 21g / cm3 ，達到licoo _ 2理論密度的94 % 。
  7. Many measures were adopted to decrease bombard in order to improve the solar cells propertivity, such as decreasing target voltage, increasing target distance, accelerating the movement of the substrate. by optimizing the experimental conditions, short - circuit current was increased by 3. 7ma / cm2, the conversion efficiency was increased by 2 %, the stability was improved

    在硅薄膜電池的zno ： al al背反射電極應用方面，通過減小靶電壓、適當增加靶距和基片的運行速度來減小對電池的轟擊，改善電池性能，通過優化實驗條件，使電池的短路電流提升了3 . 7ma cm ~ 2 ，效率增加了2 ，穩定性得到改善。
  8. It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance

    採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。
  9. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  10. The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

    利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。
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