硼硅處理 的英文怎麼說
中文拼音 [péngguīchǔlǐ]
硼硅處理
英文
borosiliconizing-
Finally, the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最後文章還系統研究了快速熱處理（ rtp ）對重摻硼硅單晶中氧沉澱的影響。Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。In this paper, firstly, the effect of heavy boron - doping on oxygen precipitation was investigated. after annealed at different conditions, it is found that oxygen precipitation is enhanced by heavily boron doping, especially at high temperature
本文研究了直拉重摻硼單晶硅的氧沉澱行為，著重研究了直拉重摻硼硅單晶中的氧沉澱的熱處理、內吸雜、 rtp處理等性能。In this part, the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells. then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature
文中首先介紹了摻硼單晶硅太陽電池的光照衰減問題及衰減機制，然後以p型摻硼單晶硅為實驗樣品，經過不同溫度的熱處理，對影響光衰減的主要因素硼、氧進行了研究。分享友人