磁光薄膜 的英文怎麼說

中文拼音 [guāng]
磁光薄膜 英文
magneto-optic thin film
  • : 名詞1. [物理學] (磁性; 能吸引鐵、鎳等的性質) magnetism 2. (瓷) porcelain; china
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : 名詞[方言] (浮萍) duckweed
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • 薄膜 : thin film; film; diaphragm
  1. As one of the most important applications, cmr bolometer is fabricated using the lacamno3 films, which has a metal - insulator transition temperature at 300k. the archetypal bolometer is fabricated after the film is photolithographed, evaporated au electrodes and fixed

    以製作室溫超巨電阻測輻射熱儀為目標,將t _ ( mt ) 300k , tcr 5的進行刻、電極製作、封裝等處理製作測輻射熱儀原型器件。
  2. Series of guowei dry - method composite machines as new product are explored with our many years ' experience, the requirement of the users. the first metal of this machine is adopted with : photo - ecectricity auto. tracking " correcting deviation equipment, magnetic powder tension control. pneumatic back pressure shifting blade, oven temperature controlled qutomatically, big roll with oil heating, coating composite pneumatic control as well as double frequency governor etc. it will make the machine with fast speed, lower voice, low polluted by air, shout consumptionfor energy, stable working etc. especially suitable for al - foil with smooth surface and no enough firming, glass paper, polyester ect. the composite material with hard strength, fireproof, anti - ventilation, anti - fatty, frozen, dudrable steam etc character. it is widely used in food, pharmacy, as well as daily articles to package

    「國偉」 、系列乾式復合機,是我廠根據多年的復合機製造經驗及結合客戶需求,開發的新產品,該機第一基材採用了「電自動跟蹤」糾偏放卷裝置,粉張力控制、氣動背壓移動式刮刀、烘箱溫度分段自動控制、大輥筒導熱油加熱、上膠復合氣動控制及雙變頻調速技術,使該機具有復合速度快、噪聲低、空氣污染小、能耗低、運行平穩等特點,適宜於表面滑的鋁箔玻璃紙聚酰胺等與聚乙烯、聚丙烯等的復合,復合具有強度高、防水、防透氣、防油脂、可冷凍、蒸煮等優點,廣泛應用冷凍食品、乾燥食品、醫藥品及日用品的包裝。
  3. When compared with pvd, cvd, fad film is dense, flat and lubricous because of 100 ionization rate of sediment after magnetic filtering without any large granule. moreover, it has good corrosion resistance and is not easy to be removed

    與pvd cvd技術比較,由於過濾后沉積粒子的離化率為100 ,並且沒有大顆粒, fad形成的非常緻密和平整滑,抗腐蝕性能好,且與機體的結合良好不易脫落。
  4. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超fe單晶進行了鐵共振和研究,獲得以下幾點結果: ( 1 )厚在8 - 25ml之間時,面內的晶各向異性為四度對稱各向異性,垂直單軸各向異性比同厚度的fe gaas系統小許多,而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  5. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵共振為主要研究手段,輔助以性和測量,對外延于gaas及inas上的不同厚度的單晶fe超、不同厚度的nife多晶和電子束刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形性,特別是各向異性進行了較為系統的研究。
  6. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度( monolayer ,簡稱ml )的fe單晶超進行了鐵共振( fmr )和研究,建立了理論模型對鐵共振實驗結果進行了模擬,重現了不同厚度的超,從納米團簇到兩相共存的過度階段直至連續結構與性的變化,特別是各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  7. One is to improve the photoconductivity by annealing the mpc film under magnetic field ; the other is to form composite multi - layer film of zno / pbpc and sno / pbpc, to change the spectral response range of mpc films

    一是通過場熱處理提高酞菁電導性能;二是通過將p型酞菁與n型材料異質復合,改變譜響應范圍。
  8. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流控濺射設備制備tio2減反射並通過n & kanalyzer1200學分析儀、 x射線衍射分析( xrd ) 、掃描電子顯微鏡( sem ) 、 alpha - step500型臺階儀等儀器對進行表徵,分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對性能結構的影響。
  9. Optical fiber carries excitation light produced by the blue led to the thin - film coating at the probe tip

    纖把led產生的勵傳輸給探測器尖端的塗層。
  10. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的,即si - sio _ 2、 ge - sio _ 2和al - si - sio _ 2,分別對它們的結構、吸收以及發性質進行了研究。
  11. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應控濺射制備了高度c軸擇優取向的zno,採用原子力顯微鏡( afm ) 、 x射線( xrd ) 、 hall測試儀、紫外?可見分度計和x電子能譜等分析測試手段,研究了樣品的表面形貌、晶體結構、學和電學性能等。
  12. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分,材料呈現小極化子跳躍形式輸運特徵;實驗研究了不同偏置電流對的相變影響,表明電場可以引起材料中性的變化和晶格畸變,導致相變溫度點向低溫方向移動;材料的致相變研究表明子能量、強和極化方向對輸運性質有影響。
  13. In this paper we put fonvard the method of introducing the light and middling lanthanon into the tb - fe - co magneto - optical materials by taking advantage of the higher saturation magnetization intensity, higher anisotropy and higher magneto - optical effect of light and middling rare - earth. moreover the law and mechanism of how the addition affect the magneto - optical property of the films were discussed

    本文是在比較、總結現有關于tbfeco磁光薄膜的理論和背景研究的基礎上,利用輕、中稀土元素的高飽和化強度、高晶各向異性、高效應的優點,提出在傳統的tbfeco材料中摻入輕、中稀土元素的方法。
  14. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨、金剛石及其它制備及后續的刻,激與物質的相互作用,等離子體研究為目的,研製獲得了激脈寬18ns ,單脈沖能量150mj ,矩形斑大小2cm 1cm ,束散角3mrad ,最高重復頻率5hz的xecl準分子激器。
  15. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; ( 2 )為克服現有控濺射設備的不足,提出了一種新的控濺射方案,採用該方案的設備具有:靶材利用率高、鍍均勻、成速度快等特點; ( 3 )運用afm 、 xrd 、 sem以及雙路分度計等分析手段對plzt和sno _ 2的微結構和性能進行研究,找到了制備plzt電和sno2透明電極材料的最佳工藝條件。
  16. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵等多種性質的鈣鈦礦結構氧化物的基礎上,討論影響氧化物外延生長的一些因素.考慮到相形成和生長動力學,在利用脈沖激淀積法外延生長氧化物中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長的取向都有影響.考慮到是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對外延生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織構的外延.這突出表明界面層的相互作用對鈣鈦礦結構的取向有著相當大的影響
  17. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析( gixa )技術對不同cu - fe的相結構進行了研究;利用xrd掃描及不同角度的2掃描對進行了結晶織構及殘余應力分析;運用小角x射線散射( saxs )技術測量了的厚度;採用原子力顯微鏡( afm )觀察了的表面形貌;運用能量損失譜( eds )及x射線熒譜( xrf )對進行了成分標定;使用振動樣品強計測量了不同cu - fe過飽和固溶體性能;最後利用自製的阻性能測試設備測量了真空場熱處理前後不同的巨阻值。
  18. In order to fabricate excellent electro - optic materials, this paper focused on the choice of electro - optic materials, the fabrication of ceramics target, developing new rf magnetron sputtering system, and the preparation of the electro - optic film, etc. the following results were obtained

    本文圍繞制備性能優異的電材料,從電材料的選擇、材料配比、靶材制備、射頻控濺射鍍設備的研製、電材料製作等方面進行了研究。
  19. And the dopping magneto - optical materials were constructed to better meet the demand for the properties of magneto - optical disk recording media materials, forming the series magneto - optical recording media materials and decreasing the making cost by the method of introducing the light and middling rare - earth into the tbfeco materials. the magneto - optical properties and compositions of the tb - fe - co series dopping magnetic - optical film materials were investigated. the results show that when small amount of adulteration element was introduced into the tb - fe - co, the magneto - optical properties of materials are increased. for example the kerr angle and the coercive force are both improved

    對輕、中稀土摻雜的tb - fe - co系列磁光薄膜材料進行丁性能和成分的測試,結果表明:在摻雜元素含量較小時,摻雜后的tb - fe - co材料具有較好的性能, kerr轉角_ k和矯頑力hc都有所改善,摻雜元素的含量應嚴格控制,不能超過一定限度,一般一般摻入量應莊10at左右。
  20. Magneto - optic thin film

    磁光薄膜
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