磁膜單元 的英文怎麼說
中文拼音 [címódānyuán]
磁膜單元
英文
magnetic film unit-
In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays
本論文以鐵磁共振為主要研究手段,輔助以磁性和磁光測量,對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性,特別是磁各向異性進行了較為系統的研究。The distribution of magnetic field in a permanent magnetic thin film array is investigated by analytical calculations in this thesis. theoretically, the effects of the size of array units and of the distance between them are calculated, especially the contribution of adjoining array units
本文利用磁場解析計算方法研究了永磁薄膜陣列的磁場分佈,理論上計算了薄膜陣列單元的尺寸和間距對永磁薄膜陣列工作點的影響規律,計算了周圍陣列單元對中心單元工作點的影響。In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數,在單晶硅襯底上濺射-淀積了tini薄膜,並進行了超高真空退火, dsc法測得其馬氏體逆相變峰值溫度為72 ,利用能譜分析( eds )技術測得其ti含量約為51at ,通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射( xrd )分析,發現在用大功率( 2000w )直流磁控濺射法制備tini薄膜過程中,存在ti 、 ni與si的雙向擴散,發生了界面反應,並有三元化合物ni _ 3ti _ 2si生成。Based on the theoretical calculation and the magnetic performance index, so - called " effective magnetization intensity ", an optimized scheme for a permanent magnetic thin film array is proposed, which is " given 10 m thickness film, the optimized size of the units is 40 m 40 m, while the distance between them is 10 m " finite element methods is employed to characterize the magnetic properties of a permanent magnetic thin film array with magnetic anisotropy
在此基礎上,按照永磁薄膜陣列的「有效磁化強度」磁性能優化指標,求出了一個較理想的永磁薄膜陣列設計方案:對10微米厚的永磁薄膜,陣列單元為40 m 40 m ,間距為10 m 。本文利用有限元分析方法初步研究了各向異性永磁薄膜陣列的磁性能,得到了關于永磁薄膜陣列的磁化特徵,驗證了解析計算採用的均勻磁化假設的合理性,同時分析了磁場中永磁薄膜受到的磁力與薄膜厚度的變化關系。分享友人