磷化鎵 的英文怎麼說

中文拼音 [līnhuàjiā]
磷化鎵 英文
gallium nitride
  • 磷 : 名詞[化學] phosphorus （15號元素,符號p）
  • 鎵 : 名詞[化學] gallium （31號元素, 符號 ga）
  1. These compounds pair one or more elements from the third column of the periodic table ( such as aluminum, gallium or indium ) with an element from the fifth column ( typically phosphate, arsenic or antimony )

    這些化合物將周期表第三欄里的一種或多種元素（例如鋁、鎵或銦）與第五欄里的一種元素（通常是磷、砷或銻）配在一起。
  2. Aluminium gallium indium phosphide, algainp

    磷化鋁銦鎵
  3. Such an advance would enable engineers to incorporate both electronic and optical devices onto cheap silicon chips rather than being compelled to employ costly - to - make lasers based on “ exotic ” semiconductor materials such as gallium arsenide or indium phosphide

    如果成功，工程師就能在成本低廉的矽晶片上同時製作電子和光學裝置，不需使用砷化鎵或磷化銦等稀有半導體材料，製作成本高昂的半導體雷射。
  4. For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias

    為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。
  5. Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers

    磷化砷化鎵片的最大光致發光波長及其相應成分的試驗方法
  6. Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements

    測量霍爾效應用恆定成分范圍的外延磷化砷化鎵試樣的制備
  7. A typical gap diode produces about 10 times more radiant power than a typical caasp diode

    典型磷化鎵二極體的輻射功率比典型磷砷鎵二極體大10倍左右
  8. The green emitting gap has quantum efficiencies as high as 0. 6 % recorded for laboratory. present marketed units, however, have much greater than an order of magnitude less efficiency

    按實驗記錄，發綠光的磷化鎵的量子效率高達0 . 6 % ，但目前請市售產品效率則低一個數量級還多
  9. From discussing the factors that influence the quality of the single - crystal, a positive method using the floating - boat method from the british mr corp. to control the diameter of the single - crystal was determined, and produced the highest quality low epd single - crystals international

    該實驗討論了各種因素對拉制磷化鎵單晶的影響。並確定了一套較優越的拉制方法，制備出了國際上現階段所能達到的最高水平的低位錯單晶。
  10. In this paper, the author demonstrated the basic principle, development history and characters of high - press liquid - enveloped czochralski method ( leg ), and its application in producing the gap semi - conductors, at the same time of introducing the general situation of them

    本文論述了高壓液封直拉法的基本原理、發展歷史、特點，該法在半導體材料行業的應用及應用中的影響因素，化合物半導體材料磷化鎵的概況、高壓液封直拉法在制備該材料時的應用。
  11. Gallium arsenide photphide

    磷砷化鎵
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