禁帶躍遷 的英文怎麼說
中文拼音 [jīndàiyuèqiān]
禁帶躍遷
英文
transition forbidden-
Abstract : we have studied theoretically a beat effect in a four - level system due to fifth - order optical polarization, and considered the cases that the pump beams have either narrowband or broadband linewidth. we have found that the accuracy for the energy - level splitting measurement is determined by the homogeneous linewidths of the optical transitions. that is to say, this technique can achieve doppler - free precision in the measurement of the energy level splitting between two excited states which are dipolar forbidden from the ground state
文摘:研究了四能級系統中基於五階極化的拍頻效應，考慮了抽運光束為窄帶線寬或寬帶線寬的情形.發現其對能級分裂的測量精度決定於光學躍遷的均勻增寬.也就是說，這種技術在測量與基態是偶極禁戒躍遷的兩激發態之間的能級分裂時，可得到消除多普勒增寬的精度This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters
Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。The bandgap energy of ar gas c60 thin film is 2. 24 ev, and the bandgap energy of n2 gas film is 2. 09 ev. both are larger than that of vacuum c60 thin films ( 2. 02 ev )
用直接躍遷吸收邊關系得出在氬氣和氮氣中制備的c60薄膜的禁帶寬度分別為2 . 24ev和2 . 09ev ，均比在真空下生長的c60薄膜禁帶寬度（ 2 . 02ev ）要大。
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