積分電離室 的英文怎麼說

中文拼音 [fēndiànshì]
積分電離室 英文
integrating ionization chamber
  • : Ⅰ動詞(積累) amass; store up; accumulate Ⅱ形容詞(長時間積累下來的) long standing; long pending...
  • : 分Ⅰ名詞1. (成分) component 2. (職責和權利的限度) what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] (料想) judge
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • 積分 : 1. [數學] integral; integrate; integration 2. [體育] (積累的分數) accumulate points
  1. Get the inclusion bodies 2 ) western blot analysis of fusion protein expression ( 1 ) electrophoresis ( 2 ) transfer proteins from gel to membrane ( 3 ) blocking ( 4 ) incubation with primary antibody ( 5 ) enzyme conjugate incubation ( 6 ) substrate incubation. 3 ) gst detection module with cdnb enzymatic assay 3 purification of gst fusion proteins 1 the denaturalization of inclusion bodies. 2 purification using glutathione sepharose 4b column wash matrix with 1 pbs, prepare a 50 % slurry for batch purification method, pack column with matrix slurry

    三、 gst一hbrp重組蛋白的純化1 .超聲破碎細胞,心,上清和沉澱進行sds一page析2 .樣品處理提取包涵體,變性后,加人用pbs平衡過的以utal腸onesepb抓脫4b ,溫下孵育3 .以utadtionesepharose4b柱純化以utad雲onesepharose4b柱的準備根據毛山lel ,決定純化所需的gll衛ta1如oneseph娜se4b的柱床體,用預冷的1xpbs清洗cldtathionese戶, se4b ,得到50 %的基質
  2. Were invited to share their research results ion plating technologies and recent industrial developments and pvd hard film research conducted by the advanced coatings applied research laboratory ( acarl ) that was funded by itc and sponsored by the industry

    ,與我們享有關的研究成果,包括鍍技術和業界的最新發展,以及由先進塗層應用研究實驗進行的物理氣相沉硬膜。
  3. According the key factors we find, we bring forward a new conception : multilevel suppressor and design a new high performance suppressor whose ion - exchange membrane has bigger areas and using three electrodes including one cathode ( anode ) and two anodes ( cathode ), at the same time we fill the suppression compartment with one kind of ion exchange resin which has moderate exchange capacity. according to our experiment ' s results, we find the new type suppressor has quite high working current efficiency and suppressing capacity. in most cases, the suppressor ' s current efficiency is over 90 % ; the suppressor can transform the naoh ( concentration : 200mmol / l, flow rate : i. oml / min, conductance : over 10000 i - i s cm " ) to pure water ( conductance : 8. 9 it s cm in chapter 3, the high performance suppressor is applied in determination some trace - amounts ions in plating solution, sewage. in this chapter, we also have a research on the gradient ion chromatography

    第二章首先以xyz - 1型化學抑制柱為例,析了化學抑制柱的抑制過程得出影響抑制容量的主要因素主要是抑制柱的流效率和子交換膜的極限流密度,因此採用中等交換能力的子交換樹脂作為抑制的填料以提高流效率,在通常情況下流效率可達到90以上;在選用同種子交換膜的前提下,可通過增加子交換膜的有效面達到提高極限流的目的從而提高抑制柱的抑制容量,因此提出了多級抑制的概念並據此研製了共極式高容量化學抑制柱,該抑制柱最高可將流速為1 . 0ml / min ,濃度為200mmol / l導率超過10000 s ? cm ~ ( - 1 )氫氧化鈉溶液抑制為導率低至8 . 9 s ? cm ~ ( - 1 )的純水,並且具有穩定性高、析結果準確等優點。
  4. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應和50mm高反應在各種工藝條件下的子密度和子溫度,得到這兩個參數在反應軸向位置的空間佈、隨功率和氣壓的變化曲線、頂蓋接地和反應對它們的影響,結果表明子密度為10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ,子溫度在4 10ev之間;當頂蓋接地時,該處的等子體密度明顯大於不接地;在同樣條件下, 50mm高反應內的子密度明顯大於30mm高反應
  5. In this paper we deposited solar cells with pin structure on glass substrate by use of separated pecvd system. the main work can be summed as following : l ) the u c - si : h p - type layer has been deposited and the comparison of i - v characteristics between the cells made with u c - si : h as window layer and the cells made with a - sic : h as window layer shows that the cells with u c - si : h as window layer have better performance

    本文主要利用pecvd系統在玻璃襯底上沉pin結構太陽池,主要工作可總結如下: 1 ) p層微晶結構的沉;用c - si : h與傳統所用的a - sic : h別做池的p層,比較了二者的i - v特性,發現c - si : h作為池的p層有更大的優越性。
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