空穴密度 的英文怎麼說

中文拼音 [kōngxuémìdù]
空穴密度 英文
hole density
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  1. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  2. The interaction will lead to tendency of an equilibration of energy over both of transverse and langmuir plasmons with the same frequencies near ( subscript p ), which is agreement with our numerical analysis

    求出了強朗繆爾波的強度和密度空穴的尺度，結果與粒子模擬的預測結果及實驗所測數據大致相符。
  3. Hole - sheet - density in sige pmos quantum well with - doping - layer

    量子阱溝道空穴面密度研究
  4. On the basis of zakharov equations in frame of strong turbulence, it is shown that langmuir waves excited by transverse pumping plasmons near critical surface may collapse, leading to the formation of density cavity due to ponderomotive force

    從圖像中可看出，激光與等離子體的相互作用導致橫波與朗繆爾波之間出現的能量均分現象和密度空穴。
  5. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
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