空穴導電 的英文怎麼說

中文拼音 [kōngxuédǎodiàn]
空穴導電 英文
hole conductance
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  1. We now believe that these materials conduct by a process known as hole conduction.

    現今我們知道，這些材料的導電過程是所謂「空穴導電」。
  2. Hh silc is found to have a more pronounced transient effect

    熱空穴應力導致的漏電流具有更加顯著的瞬態特性。
  3. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明，共混復合后，其光電導性能表現出負效應，並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因，同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  4. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  5. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  6. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  7. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  8. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  9. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  10. Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor

    而霍耳系數取決於半導體材料中電子濃度和空穴濃度的相對大小及其遷移率之比。
  11. Dopant - an element that contributes an electron or a hole to the conduction process, thus altering the conductivity

    攙雜劑-可以為傳導子電供提程過或空穴的元素，此元素可以改變傳圓晶。
  12. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  13. Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability, but at the same time, it will cause the reduction of brightness and efficiency

    Lif作為電子注入層，能夠明顯提高器件的發光效率，降低器件的工作電壓； cupc作為空穴注入層能夠使器件穩定性提高，但也導致了亮度和效率的下降。
  14. The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ), showing two photoluminescence ( pl ) peaks / bands, centered at 2. 90 ev ( blue ) and 2. 23 ~ 2. 41 ev ( yellow - green ), respectively. the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h. ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely

    對于復合h ps zno結構的發光機制，認為是納米h價帶中的電子在紫外光的激發下，躍遷到zno的導帶，從而處于激發態，由於多孔硅的導帶比氧化鋅的導帶低， zno導帶中處于激發態的電子很快躍竄到多孔硅的導帶，然後再與h價帶中的空穴發生復合，發出可見光。
  15. We now believe that these materials conduct by a process known as hole conduction

    現今我們知道，這些材料的導電過程是所謂「空穴導電」 。
  16. The characteristic of current and voltage was also analysed

    二、一個分子兼具電子傳導及空穴傳導性能的嘗試。
  17. Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area

    多數載流子-一種載流子，在半導體材料中起支配作用的空穴或電子，例如在n型中是電子。
  18. Titanium dioxide is a semi - conductor with wide band gap, and its photocatalysis operates only when it is irradiated under the ultraviolet radiation of sunlight, and also, the electron hole of tio _ 2 has very high reunited rate

    但由於tio _ 2為寬禁帶半導體，對太陽光的利用僅局限於紫外部分，並且tio _ 2的光生電子空穴復合幾率很高。
  19. The microcavity effect provides the possibility to control the spectral properties of emission and is of considerable interest in the realization of flat panel display devices, which require the emission of blue, green, and red light. in this paper, ladder - type poly ( p - phyenylene ) （ lppp ） thin films were used as the light emitter and hole transporter, while dye pyomethene doped alq was electron transporter

    本文採用有機半導體梯形對次苯基聚合物（ lppp ）作有機電致發光器件的發光材料和空穴傳輸材料，以1 . 0 % pm580染料（ dyepyomethene ）摻雜的8 -羥基喹啉鋁（ 8 - hydroxyquinolinealuminum - alq ）作器件電子傳輸材料。
  20. Bipolar - transistors that are able to use both holes and electrons as charge carriers

    雙極晶體管-能夠採用空穴和電子傳導電荷的晶體管。
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