空穴遷移率 的英文怎麼說

中文拼音 [kōngxuéqiān]
空穴遷移率 英文
hole mobility
  • : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
  • : 名詞1 (巖洞; 窟窿) cave; cavern; grotto 2 (動物的窩) den; hole 3 (墓穴) grave4 [中醫] (穴...
  • : Ⅰ動詞1. (遷移) move 2. (轉變) change 3. (古時指調動官職) be appointed to a certain post Ⅱ名詞(姓氏) a surname
  • : Ⅰ動詞1. (移動) move; remove; shift 2. (改變; 變動) change; alter Ⅱ名詞(姓氏) a surname
  • : 率名詞(比值) rate; ratio; proportion
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現,應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高( > 5 105v / cm )時,雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化,而單軸壓應力器件則不會受到影響。
  2. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效和亮度為目標,提出了提高及b幾種方案,研究了材料性質,器件結構,它們的穩態及瞬態特性及發光機理,特別關注了以兼具電子傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、、復合及湮滅等。
  3. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-到薄膜表面后,有足夠的水分子及時地與發生反應,不但減少了電子-的復合機,而且產生大量的強活性羥基,使薄膜的光催化性增強。
  4. Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor

    而霍耳系數取決於半導體材料中電子濃度和濃度的相對大小及其之比。
  5. In strained - si pmosfet with si0. 76ge0. 24 substrate, the mobility enhancement factor is 1. 25. however, as the ge content in sige substrate surpasses 40 %, the mobility enhancement in strained si pmosfet becomes saturated

    對于襯底中ge含量為24 %的應變硅pmosfet ,空穴遷移率是相同尺寸硅pmosfet的1 . 25倍,當ge含量超過40 %時,空穴遷移率達到飽和。
  6. From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48. 5 % improvement in the strained si layer

    通過比較實驗我們可以獲知,應變si材料中的電子相比于體si材料最大可有48 . 5 %的提高,而應變sige材料中的空穴遷移率相比于體si材料可有近15 %的提高。
  7. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構,分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式;用解一維poisson方程的方法分析了sicpmos間電荷區的電特性;本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
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