空穴電子 的英文怎麼說

中文拼音 [kōngxuédiànzi]
空穴電子 英文
f. elektronenleerstelle m. elektronendefekt
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  • 電子 : [物理學] [電學] electron
  1. Exciton is electron-hole pair held together by their mutual coulomb interaction.

    激子就是由電子和空穴在相互間的庫侖力作用下，相互維持在一起的電子--空穴對。
  2. The density of holes in the base is less than the density of free electrons in the emitter and collector.

    基極中空穴的密度小於發射極和集電極中自由電子的密度。
  3. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明，共混復合后，其光電導性能表現出負效應，並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因，同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  4. The process of photoluminescence refers to the radioative recombination of electronhole pairs generated by shining high energy light on a crystal.

    光致發光過程就是高能量光子照射到晶體上之後，晶體所產生的電子一空穴對的輻射復合過程。
  5. Hole - similar to a positive charge, this is caused by the absence of a valence electron

    空穴-和正是，似類荷電由缺少價電子引起的。
  6. As the increasing of concentration, the host and guest interconverted, and the more the charge been transferred, the more the total energy decreased. finally, we deduce that the doping of rubrene in pvk just acting as traps in electroluminescent devices, and its trapping electrons arrested many cavities in pvk. and so, more pvk who did n ' t transport energy was concerned with trop and it makes less pvk was concerned with energy transfer in photoluminescent devices than in electroluminescent devices

    基於光致發光和電致發光中pvk與rubrene發光強度的不同，我們對低摻雜時的電致發光和光致發光進行了比較，並提出：在電致發光中， rubrene的摻入在pvk鏈間相當于陷阱，其陷阱電子對pvk空穴的吸引，使一部分在光致發光中不參與能量傳遞的pvk參與了這種陷阱作用，使得在電致發光中不參與能量傳遞的pvk可能比光致發光中少。
  7. The other way was to knock a bound electron off a neutral atom creating simultaneously an electron and a hole.

    另一種方法是把束膊電子從中性原子中撞出，同時產生電子和空穴。
  8. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  9. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  10. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  11. Under application of an electric field, the electron and hole move in opposite directions at different velocities.

    在電場的作用下，電子和空穴以不同的速度沿著相反的方向運動。
  12. All these prevent the electrons and holes from continuing their steady motion as quasi-free particles, and introduce scattering.

    所有這些影響都會妨礙電子和空穴去繼續它們作為準自由粒子的穩定運動，而引起散射。
  13. Xps showed that there were much chemical absorbing water on the ti _ ( 2 ) film surface which mainly existed in form of - oh, and the contents of - oh was increasing with the annealing temperature. hydrophilic property became better with the annealing temperature ; the essential relation between the changing of contact angle and light - induced - electrons and light - induced - cavities was studied in details. the photocatalysis of samples without heat treatment was very bad, but that of samples after heat treatment was much better

    Xps的分析表明：試樣的表面含有大量的化學吸附水，主要以羥基的形式存在，隨著熱處理溫度的升高，吸附羥基的含量在增加；親水性能測試表明：隨著氧氣分壓的變化，其親水性能變化不大，隨著熱處理溫度的增加，試樣的親水性能在變好，並從理論上解釋了親水性能光照前後變化和光生電子?空穴對之間的本質關系。
  14. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  15. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  16. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  17. This makes the system of orbitals unstable and an electron from an orbital further out rapidly fills the hole

    這使得軌道系統不穩定，外一層軌道的電子會迅速躍遷到內層空軌道上，填補空穴。
  18. Tio2 film is antibacterial through photocatalysis. the silver doped tio2 film baffle the separate of electron and cavity, change the energy gap ' s framework of tio2, and improve its activity performance of photocatalysis

    二氧化鈦薄膜是光催化抗菌，摻銀二浙江人學幀卜論義氧化鈦薄膜阻止光生電子一光生空穴的分離，改變了tioz的能帶結構，提高了它的光催化活性。
  19. Mgf plays the role of segregation. the third method is to enhance the oel by means of making complex with n - vi compounds. el - vi compounds are very stable and possessing higher electron mobility than organic materials

    但電子不是在真空中，而是在固體中加速的，我們稱它為固態陰極射線發光或類陰極射線發光，它的激發態是成對的電子及空穴。
  20. By analyzing their energy offset on the interfaces, we found that the introduction of ii - vi compounds replaces the original steep barrier with ladder - like barriers. the injection probability becomes the production of two injection probabilities through lower barriers and become larger than the original one. in chapter 5 we want to utilize the deeper, dynamical ( in addition of static ) properties of semiconductor to reinforce the luminescence of oel

    為使類陰極射線發光同有機電致發光集成，我們設計了非對稱結構al sioz mnppvn ， mn ppv中的發光是由於從sioz出來的電子和從ld注人的空穴的復合，而由於sioz中的電子的倍增過程，從sioz層出來的電子能量不是單一的，而有一個從低能到高能的分佈。
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