空穴電導率 的英文怎麼說
中文拼音 [kōngxuédiàndǎolǜ]
空穴電導率
英文
gap-conductivity- 空 : 空Ⅰ形容詞(不包含什麼; 裏面沒有東西或沒有內容; 不切實際的) empty; hollow; void Ⅱ名詞1 (天空) s...
- 穴 : 名詞1 (巖洞; 窟窿) cave; cavern; grotto 2 (動物的窩) den; hole 3 (墓穴) grave4 [中醫] (穴...
- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 導 : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
- 率 : 率名詞(比值) rate; ratio; proportion
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The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity
結果表明,共混復合后,其光電導性能表現出負效應,並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因,同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率,從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 )制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ,空穴阻擋材料balq3的摻入顯著影響了oled的光電性能,當balq3的摻雜濃度為25mol %時, oled的發光效率為1 . 0lm / w ,發光光譜的峰值為440nm ,色純度為( 0 . 18 , 0 . 15 ) ,未封裝器件的半衰期達到了950小時; 4 )在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時,不僅改善了器件的發光亮度和色純度,而且提高了器件的發光效率和壽命。Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor
而霍耳系數取決於半導體材料中電子濃度和空穴濃度的相對大小及其遷移率之比。According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily
本文針對光催化技術應用中存在的tio _ 2光催化量子效率低,吸收利用太陽能光譜范圍有限,催化劑回收困難等問題,通過窄禁帶半導體cds ( e = 2 . 5ev )的復合,對納米tio _ 2進行了改性研究,一方面,由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍,另一方面,由於能帶的交疊,提高了光生電子和空穴的分離效率,從而提高了薄膜的光催化降解效率。Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability, but at the same time, it will cause the reduction of brightness and efficiency
Lif作為電子注入層,能夠明顯提高器件的發光效率,降低器件的工作電壓; cupc作為空穴注入層能夠使器件穩定性提高,但也導致了亮度和效率的下降。Titanium dioxide is a semi - conductor with wide band gap, and its photocatalysis operates only when it is irradiated under the ultraviolet radiation of sunlight, and also, the electron hole of tio _ 2 has very high reunited rate
但由於tio _ 2為寬禁帶半導體,對太陽光的利用僅局限於紫外部分,並且tio _ 2的光生電子空穴復合幾率很高。Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area
同時,此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度,這表明此時薄膜中的光生電子和空穴的復合速率最低,因而更有利於物質的光催化降解。當熱處理溫度高於700時,武漢理工大學碩士學位論文薄膜的光催化活性下降,這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。分享友人