穿漏 的英文怎麼說

中文拼音 [chuānlóu]
穿漏 英文
runout
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  1. The sun breaks through the clouds.

    日光從雲縫中穿漏出來。
  2. Drain breakdown voltage

    漏擊穿電壓
  3. The liver function of 48 donors got recovery in a week, but the liver function of 4 donors recovered beyond a week. 2 donors had the fat liquefaction of incision. 1 donor had the hematocele under diaphragm. 1 donor had portal vein thrombus. 1 donor had chyle leakage. 1 donor needed pleural punctured for hydrops outflow

    2例供體術后切口脂肪液化， 1例供體術后出現服下積血， 1例供體術后發生門靜脈血栓， 1例供體術后發生小量乳糜漏， 1例行胸腔積液穿刺引流。
  4. There was one among them, the appearance of a lady dressed in black, who was leaning in the embrasure of a window, and she had a light shining upon her golden hair, and she looked like let us ride on again, for god s sake, through the illuminated villages with the people all awake

    其中之一是一個穿黑衣的少婦，靠在窗戶的漏斗狀斜面上，一道光照著她的金發為了上帝的緣故，咱們騎上馬繼續去吧！從還有燈光照亮的人們還沒有睡覺的村子穿過去！
  5. . . sands through the hourglass, so are the days - -.

    . . .沙子穿過沙漏日子也如此
  6. Sands through the hourglass, so are the days of our lives

    .沙子穿過沙漏日子也如此
  7. Sands through the hourglass, so are the days -.

    .沙子穿過沙漏日子也如此
  8. . . sands through the hourglass, so are the days of our lives

    . . .沙子穿過沙漏日子也如此
  9. Incondition of surface anti - corrision and insulation coat of metal and tiny hole of steel where resistance and crack is very small, when supplying a high voltage, gas crack will be punctured and electric spark discharging will occur, now send a pulse signal to the alarming circuit the alarmer can send out sound and light to alarm. we can do leak hunting on the coating according to this principle

    金屬表面絕緣防腐層過薄、漏鐵及漏電微孔處的電阻值和氣隙密度都很小，當有高壓經過時就形成氣隙擊穿而產生火花放電，給報警電路產生一個脈沖信號，報警器發出聲光報警，根據這一原理達到防腐層檢漏目的。
  10. Two farmers with 2 ( superscript nd ) degree burn, 3 % and 2 % tbsa, respectively in the perineal areas due to accidental contacting with paraquat were reported

    回溯病史，兩人皆是因為巴拉刈自銹蝕的農具接縫滲漏出來，穿過防護衣的破洞而積聚在會陰部，造成此一特殊部位的化學藥物灼傷。
  11. But we have forgotten to mention one circumstance, which nevertheless ought not to be omitted ; in one of the rooms he crossed, the trousseau of the bride - elect was on exhibition. there were caskets of diamonds, cashmere shawls, valenciennes lace, english veilings, and in fact all the tempting things, the bare mention of which makes the hearts of young girls bound with joy, and which is called the corbeille

    但我們已經記憶提到一件事情，而那件事情是決不應該漏掉的就是：在他所穿過的一個房間里，放著那位未來新娘的嫁妝，包括一盒盒的鉆石克什米爾羊毛披巾威尼斯花邊英國面紗，還有其他提到它們的名字就會使青年姑娘們的滿心歡喜地狂跳起來的誘人的東西。
  12. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  13. The duration from the occurrence of penetrating chinks to dyke breaches depends on the composition and cross - sectional size of the dyke body, and the river water level

    從發生貫穿性漏洞到潰口的時間與堤身組成物、堤身斷面大小、江水位高低有關。
  14. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  15. The technology, which is developed on the basis of perfora ting techniques for oil wells and cement injection techniques, can not shoot thr ough the frozen pipe wall at predetermined ground location using energy - gatheri ng - blasting techniques, but also consolidate shaft wall rock by cement injectio n and filling along the frozen pipe and perforated hole s trajectories, achievi ng leakageproof of shaft walls and reducing vertically - added force

    它利用聚能射孔爆破技術，在預定地層位置將凍結管射穿，同時在地面利用凍結管及射孔彈道對特定地層進行注漿充填加固，既可實現井壁堵漏，又能減少由於地層沉降對井壁的垂直附加力。
  16. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  17. Once a penetrating chink appears, it should firstly plug up at a vortex pot on the water side of the dyke, with auxiliary drainage added on the land side

    貫穿性漏洞出現后，首先應找準漏斗，外堵為主，配以內導，搶險的重點應放在迎水面。
  18. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  19. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  20. Better wear out shoes than sheets

    寧願把鞋子穿漏，不願把床單磨破。
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