第二晶體管 的英文怎麼說

中文拼音 [dìèrjīngtǐguǎn]
第二晶體管 英文
transistor seconds
  • 第 : Ⅰ助詞（用在整數的數詞前 表示次序） auxiliary word for ordinal numbers Ⅱ名詞1 [書面語] （科第） gr...
  • 二 : Ⅰ數詞（一加一后所得） two Ⅱ形容詞（兩樣） different
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 第二 : 1. （序數） second 2. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the second generation of computers, transistors replaced vacuum tubes

    在第二代計算機中，晶體管取代了真空管。
  2. Computers built between 1959 and 1964 are often regarded as " second generation " computers, based on transistors and printed circuits. the second generation of computers could handle interpreters, that accepting english - like commands

    1959年到1964年間設計的計算機一般被稱為第二代計算機。大量採用了晶體管和印刷電路。它能運行解釋型語言程序。
  3. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  4. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  5. One ic replaces many transistors in a computer ; result in a continuation of the trends begun in the second generation

    一個集成電路代替了計算機中的許多晶體管，導致了始於第二代的一些趨勢的繼續。
  6. The paper can be divided into two partitions : in the first part the p / g network verification problem in the vlsi chip scope is probed. an algorithm is proposed which partition the global network into several sub networks. then it performs sub network compressing equivalent transform and calculates the final size - reduced linear equations

    本論文包括兩個部分，第一部分探討了vlsi晶元p g網驗證問題，提出基於網路劃分、子網等效壓縮變換的大規模線性方程組求解方法；第二部分探討了一個晶體管級宏單元自動版圖布線系統的有關理論問題，並實現了一個實用的處理宏單元版圖的自動布線系統。
  7. Mr rowell yang long - san, chairman and managing director, proview international remarked : " proview shipped a total of 7. 2 million monitors in calendar year 2003, positioning us as the world s 5th largest crt and 7th largest lcd monitor producer

    唯冠國際主席兼董事總經理楊榮山先生表示：唯冠在二零零三年共付運了720萬臺顯示器，使集團穩踞全球第五大影像管顯示器生產商及第七大液晶體顯示器生產商。
  8. Regard how to structure the control system of sensorless bldcm with dsp - tms320f240 as the centre in this paper, the detailed argumentation course of the motor startup, bemf terminal voltage measurement and control strategy is given out, give and pay concrete details for the software and hardware realization and experimental result. in order to treat the bldcm control system with dsp clearly, the full paper divides into six chapters altogether : chapter one, introduceing the development course, the structure characteristic and operation principle, etc. of bldcm in the introduction ; chapter two, directed against the startup issue of bldcm, the chapter give and publish the rotor measure pulse orients technology for motor startup in detail ; chapter three, proceed with mathematics model of the bldcm, expounding the control schemes ; chapter four, two important devices introducing : dsp ( 240 tms320f ) and power invertor control chip ( ir2131s ) ; chapter five, give and publish the detail of hardwares of control system ; chapter six, by ccs ide of ti, realize the control schemes in the front chapters with software, offere the procedure flow chart of main subroutine and some key place of programming, the experiment result in addition

    全文共分六章：第一章、緒論中介紹了bldcm的發展歷程、電機本身的結構特點和工作原理等；第二章、針對五位置傳感器bldcm的起動問題，文中詳細給出了檢測脈沖轉子定位起動技術；第三章、從電機的數學模型入手，詳細論述了反電動勢端電壓法和系統的控制策略；第四章、介紹了硬體實現中的兩個重要器件： dsp （ tms320f240 ）和功率管逆變器控制晶元（ ir2131s ） ；第五章、詳細給出了控制系統的硬體實現細節；第六章、利用ti提供的ccs集成開發環境，將前面章節的控制方案用軟體加以實現，給出了主要部分的程序流程圖和一些編程要點以及實驗結果。
  9. This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit

    本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。
  10. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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