米孔 的英文怎麼說

If the micron of polybag is 38 micron or higher, then no need for warning or air holes

是不是說：要是膠袋的厚度是38微米或者更厚的話，就不用警告性語標或者打孔了！

The results from the pollen densitometers indicate the number of pollen grains sucked into a device per square millimeter of the aperture.

花粉顯像密度計的計算結果，可以表明每一平方毫米孔徑上吸入的花粉粒數。

Effect of glycerin on the formation of anodic oxidized alumina nano - pore

甘油對陽極氧化鋁納米孔形成過程的影響

Microstructure of anodic aluminum oxide films

鋁陽極氧化膜納米孔陣列的微細結構

Synthesis of nanoporous silicon nitride - based materials with various novel morphologies in nonaqueous media

非水體系合成多種形貌氮化硅基納米孔材料

In this dissertation, firstly, preparation, structure and optical properties of templates - - anodic alumina membranes ( abbreviated as aam ) with nano - pore arrays were studied intensively. then electro - deposition preparation and mechanism of cadmium selenide ( cdse ) thin films were investigated. at last, cdse nano - wire arrays in aam with nano - pore arrays were prepared and characterized by template - electro - deposition method which is one kind of up - to - date way and has merits of both template technique and electro - deposition method

本論文首先對模板? ?納米孔陣列陽極氧化鋁膜（ aam ）的制備、結構和光學性質進行了比較詳細的研究，然後研究了cdse薄膜的電沉積法制備及沉積機理，最後結合模板技術和電沉積法各自的特點，首次以納米孔陣列aam為模板，用模板-電沉積新方法制備出cdse納米線陣列，並對其進行了較為詳細的表徵。

( 2 ) the images of aam were characterized by scanning electron microscope ( sem ), transmission electron microscope ( tem ) and atom force microscope ( afm ). the results indicated that pores in the as - prepared aam templates owned nearly the same diameter, parallel arrangement, huge density and formed nano - pore arrays

（ 2 ）用sem 、 afm和tem等分析方法對aam的形貌進行了表徵，結果表明：制得的aam中含有大小均勻一致、排列規整、密度較大的納米孔陣列，為模板-電沉積法制備cdse納米線陣列奠定了良好的基礎。

Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige

The corrosion behavior of porous silicon in hf / h2o2 solution has been studied. it is found that the inner corrosion of porous silicon takes precedence, that is, the solution enters the pores through capillary and the whole porous silicon collapses because of the simultaneous corrosion of the silicon pillars

研究了多孔硅在hf / h _ 2o _ 2溶液中的腐蝕行為，發現多孔硅的腐蝕以孔內腐蝕為主，腐蝕液通過毛細效應進入納米孔內，孔壁被腐蝕掉后使得多孔硅整層同時坍塌。

( 5 ) cdse nano - wire arrays / aam composite, cdse nano - wire arrays and cdse nano - wire were prepared by template - electro - deposition in seleneous acid ( hasech ) solution and selenosulfite ion ( sesoa2 " ) solution. then the image, composition and structure of those products were investigated by sem, tem, eds, xps and x - ray diffraction ( xrd )

（ 5 ）分別以hzseo3和seso32一為硒源，用模板一電沉積法在納米孔陣列aam模板中制備出cdse納米線陣列/ aam復合物，然後溶解掉納米孔陣列aam ，寧} ） ij得了cdse納米線陣列和cdse納米線。

Ordered ceo2 nanowire arrays embedded in anodic aluminium oxide ( aao ) membrane were fabricated by a novel technique, in which anions and cations conversely migrate into the hexagonally ordered nanochannels of the aao and react inside the channels to form one - dimensional nanostructures

以陽極氧化鋁膜護ao ）為模板通過新的方法合成了ceo :納米線陣列，新的方法一陰陽離子通過氧化鋁膜的有序納米孔道逆向遷移，在納米孔中相遇反應生成一維納米結構。

The cells and pores of porous anodized aluminum films are arranged in hexagons arrays ; and the cells sizes and diameters of the pores that are on the scale of nanometer have narrow distribution

納米氧化鋁模板中含有高度有序的納米孔陣列和晶胞陣列結構，並且孔的直徑和晶胞的尺寸在納米尺寸范圍內具有較窄的分佈。

According to the microstructure, the tsous are consist of two sections : the adsorbent of micropore inorganic materials and pcms. tsous with the maximum pcm content and high stability may be prepared by making good use of the nano effect and surface effect of organic / inorganic nano composite materials. according to the microstructure, the saturated adsorption amount of micropore inorganic material is 73. 47 %

應用該模型制備自調溫單元，可利用材料的納米尺寸效應和表面效應，在納米孔道的內壁上形成吸附力的疊加，使微孔內部具有強的吸附勢，可得到相變工質材料含量最大且性能穩定的自調溫單元；該模型中微孔無機材料對相變工質材料的理論飽和吸附量為73 . 47 。

In this paper porous alumina membrane is used as template to synthesize ni nanoarray and electrical deposition is applied

本文以納米孔的多孔氧化鋁膜作為模板，採用電化學沉積法在孔內合成出高度有序的鎳納米陣列體系。

Dependence of the pore diameter of the alumina film with nano - pore structure on anodizing voltage

氧化鋁薄膜納米孔的孔徑對電解電壓的依賴性

The effects of anodic voltages on appearance of anodic aluminium membranes with nanopore arrays

陽極氧化電壓對納米孔陣列陽極氧化鋁膜形貌的影響

The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light, and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies

從光致發光特性曲線發現，納米孔陣列aam在400一600nm之間有一個藍色發光帶，該發光帶來源於單離子氧空位。

This article discusses the synthesis methods of the three - dimension transition metal coordinate polymer with nano - pore, mainly through selecting proper ligand to enlarge nanoporous volume and increase the stability of the polymer in order to enhance its gas - storing property

摘要綜述了具有納米孔道的過渡金屬三維配位聚合物的合成方法，主要是通過選擇合適的配體來增大孔道和提高配合物的熱穩定性，達到增強儲氣性能的目的。

It is a very excellent basis for template - electro - deposition preparation of cdse nano - wire arrays. ( 3 ) optical properties of aam with nano - pore arrays were investigated by the measurements of uv - visible absorption spectrum and photoluminescence ( pl ) curve, which were the foundation to study optical properties of cdse nano - wire arrays / aam composite, cdse nano - wire arrays and cdse nano - wire

（ 3 ）通過對納米孔陣列aam的紫外-可見光吸收譜和光致發光特性曲線的測試分析，為研究以納米孔陣列aam做模板制備的cdse納米線陣列aam復合物、 cdse納米線陣列以及cdse納米線的光學性質奠定了基礎。

The main results and conclusions acquired from the dissertation are as follows : ( 1 ) aam templates with nano - pore arrays were fabricated in different anodic oxidative conditions by anodic oxidation of aluminum foils, so the pores in aam templates might have different diameters, different densities, different depths and different aspect ratios

主要研究程果和結論如下： （ 1 ）在硫酸、草酸和磷酸電解液中，在不同的陽極氧化條件下制備出具有不同大小、密度、深度和縱橫比的納米孔陣列aam模板。