粗晶粒表面 的英文怎麼說

中文拼音 [cūjīnglìbiǎomiàn]
粗晶粒表面 英文
dog skin
  • 粗 : Ⅰ形容詞1 （長條東西直徑大的） wide （in diameter）; thick 2 （長條東西兩長邊的距離寬的） wide （i...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  1. When ph value < 0. 5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling

    Ph 0 . 5時，沉積速度過快，晶核成長速度快，晶粒粒度較大，鍍層表面粗糙、發黑，表面質量差。
  2. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  3. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball

    結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
  4. The results are as follows : ( 1 ) bst thin film prepared by pulsed laser deposition is well crystallized. the average grain size is 100nm and the surface roughness is about 10nm. when the electric field intensity is 3v /, the tunability of the thin film is about 30 % and the loss tangent is about 20 % under room temperature

    研究結果如下： （ 1 ）採用脈沖激光沉積法制備的bst薄膜結晶良好，晶粒尺寸在100左右；表面粗糙度約為10 ；室溫下，當直流電場為3v /時介電系數變化率約為30 % ，介質損耗約為20 % 。
  5. The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect

    組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。
  6. The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details

    通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。
  7. In addition, the nb ( oc2hs ) 5 - precursor sbn thin films doping the k + were crystallized with preferred c - axis orientation which is similar with the orientation of the nbcl5 - precursor sbn films

    Sbn薄膜表面粗糙度ra為12nm ;加了mgo緩沖層的sbn薄膜更加緻密，結晶顆粒更小，表面也更平整， ra為4nm 。
  8. Typical temperature is 800 - 1000 in cvd diamond process, while the high temperature limits its application in optical window and coating such as gaas, zns etc. low temperature can not only make diamond crystal nucleus finer, reduce surface roughness of diamond films and lessen light dispersion, but also eliminate thermal stress

    化學氣相沉積金剛石膜過程中，襯底的典型溫度為800 1000 ，這么高的溫度限制了其作為gaas 、 zns等低熔點光學材料窗口和塗層的應用。低溫沉積金剛石膜不僅可以使晶粒細化，降低表面粗糙度，減小光的散射作用，而且可以消除熱應力。
  9. But polycrystalline cvd diamond films have rough and non - uniform thickness which can adversely affect their application. furthermore, it is difficulty to machining the cvd diamond thick - film

    但是， cvd金剛石膜為多晶材料，表面為雜亂分佈的晶粒的堆積，顯露出明顯的稜角，表面粗糙度大，后續加工比較困難。
  10. The results indicate that the surface grain size of the steel sheets is smaller than that of the center by batch annealing, while it is on the contrary of the steel sheets by continuous annealing

    結果表明，罩式退火后鋼板表面晶粒比心部的細小，而連續退火后鋼板表面晶粒比心部的粗。
  11. ( 2 ) with the condition of table 4. 2, the average reflectance decreases and the low reflectance vale moves towards shortwave, the influence on the extinction coefficient ( k ) of the films is very little, refractive index has trend of decrease and the thickness of the films decrease when increasing the total gas pressure, and the refractive index fix on a constant value when the total pressure exceeds a certain value. the phase of tio2 change from rutile to anatase and the size of surface grain change from big to small

    （ 2 ）隨著總氣壓的增加薄膜的反射低谷向短波方向移動;總氣壓對消光系數k影響不大;隨著總氣壓的增加薄膜的折射率出現了下降的趨勢，但當總氣壓達到一定的量值時折射率的變化趨于穩定;薄膜的厚度隨總氣壓的增加而減少;隨著總氣壓的增加tio2的晶體結構由金紅石相向銳鈦礦相轉變，薄膜的表面的顆粒度大小由粗大變得微小細密。
  12. ( 3 ) with the condition of table 4. 3, with increasing of temperature the average reflectance value decreases and the minimum reflectance point moves towards red direction. furthermore, temperature has little effect on the extinction coefficient ( k ). however, the refractive index value decreases remarkably when the temperature reaches about 240, but it does not change much when the temperature is below 180 and the thickness of the films increase when increasing the temperature

    （ 3 ）隨著溫度的增加薄膜的平均反射率降低並且反射低谷向長波方向移動;溫度對消光系數k影響不大;當溫度低於180薄膜的折射率變化不大，當溫度達到240左右時薄膜的折射率明顯降低;薄膜的厚度隨溫度的增加而增加;隨著溫度的增加tio2的晶體結構由混晶變為單一的銳鈦礦相，薄膜的表面的顆粒由多變少，表面形貌由粗糙多孔變得細膩平滑。
  13. The results indicated that the crystal particles in coatings were mostly rutile, and the size of the rutile was in a micrometer grade. the surface roughness of coatings was different

    發現制備的二氧化鈦功能塗層中晶粒尺寸為微米級，晶型主要為金紅石型二氧化鈦，表面粗糙度值大小不一。
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