結晶學等價 的英文怎麼說

中文拼音 [jiējīngxuéděngjià]
結晶學等價 英文
crystallographical equivalent
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 學 : Ⅰ動詞1 （學習） study; learn 2 （模仿） imitate; mimic Ⅱ名詞1 （學問） learning; knowledge 2 （學...
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 價 : 名詞1. （價格） price 2. （價值） value 3. [化學] （化合價） valence
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  • 等價 : of equal value; equal in value; equivalence
  1. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  2. The inperfect crystal structure and its analysis for materials, is an elective course for the master graduate student, which include the crystallology principle, development of crystal diffraction, crystal determination and computer simulation of new phase, analysis of solid solution and superstructure, correction of crystal structure and bondvalent theory, analysis of inperfect crystal structure, analysis of amorphous structure and so on

    材料不完整晶體結構及其分析方法，為材料科學及工程等專業碩士研究生的選修課，內容包括晶體學基礎、晶體衍射技術最新進展、新相晶體結構測定與數值模擬、固溶體與超結構分析、晶體結構修正與價鍵理論、不完整晶體結構分析、非晶結構分析等。
  3. The major performances of concrete and mortars, which are mixed with different quantities of expansion admixtures under the same mix proportions, are studied systematically and deeply in this work. sulphoaluminate mixed with a type of new expanding component by use of the composite methods are studied in the laboratory, and some achievements have been obtained. the service conditions, the characteristics and the shortcomings of expansion admixture in the concrete engineering are analyzed and summarized based on literatures, and the expanding mechanism of concrete is discussed

    本文試圖從膨脹劑不同摻量研究其對混凝土和砂漿主要性能的影響，進行了一系列宏觀力學性能試驗研究；利用差熱分析（ dta ） 、掃描電子顯微鏡（ sem ）等分析手段對鈣礬石等水化產物的結晶和生成量、形貌特徵進行微觀分析；並採用復合方法摻加新型膨脹組分對硫鋁酸鹽類膨脹劑（ uea ）進行了改性試驗研究，根據多因素模糊綜合評價方法就各類膨脹劑的主要性能進行綜合評價，得出摻加新型膨脹組分pt的膨脹劑性能較優，取得了明顯的效果。
  4. This paper summarized the study advance of effect of ultra high pressure treatment on starch characteristic, including gelatinisation property, theological properties of paste, gelatinisation kinetics and the change of crystalline structure, discussed the chemical modified of starch which can occur under ultra high pressure authors also consider that this investigation, which applies ultra high pressure technology to modify starch and enhance its functional property has more important theoretical and practical value

    摘要綜述了超高壓作用對澱粉的糊化特性、澱粉糊的流變學特性、糊化動力學及結晶結構變化等方面的影響，討論了超高壓作用下可能發生澱粉的化學變性，指出應用超高壓技術對澱粉進行改性並提高其功能特性的研究具有重要的理論和實用價值。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
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