絕對值電路 的英文怎麼說

中文拼音 [juéduìzhídiànlù]
絕對值電路 英文
absolute-value circuit
  • 絕 : Ⅰ動詞（斷絕） cut off; sever Ⅱ形容詞1 （完全沒有了; 窮盡; 凈盡） exhausted; used up; finished 2 ...
  • 對 : Ⅰ動詞1 （回答） answer; reply 2 （對待; 對付） treat; cope with; counter 3 （朝; 向; 面對） be tr...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 絕對值 : [物理學] [數學] absolute value; absolute; modulus絕對值符號 [自動化] absolute value sign; 絕對值...
  • 絕對 : absolute
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  2. In this paper, we begin with actual products designs and then combine the real conditions. on condition that technique conditions requirements were satisfied, by adopting electromagnetic field numerical analysis and experimental research, the electric field distribution inter - phase and to ground of 12kv metalclad withdraw switchgear vacuum circuit breaker is described accurately. the electric field distribution and movement in different conditions are also confirmed

    本文從實際產品設計入手，結合現實情況，在滿足技術條件要求的基礎上，通過採用電磁場的數值模擬分析及實驗研究，準確地描述了12kv配電系統中置櫃真空斷路器相間及對地全場域電場分佈情況，確定了中置櫃在不同情況下的電場分佈、變化情況，通過理論的計算和分析，對產品的絕緣進行了校核與驗證，通過多種方法的比較，進而得到合理的布置結構和達到最佳的絕緣配合，為實際產品的開發和設計提供了理論依據。
  3. This can fully consider the effect of the structure of transmission line and the selection of lighting parameter etc. by calculating and analyzing various of factor that affect the lightning tripping probability of 500kv double circuit transmission line, we can draw the conclusions : the result by intersecting method is more accord with the practicality circumstance than by existing standard methods, using unbalance high insulation and reverse sequence of wire can reduce the contemporary outage rate of double circuit line, reducing the footing resistance is one of the most efficiency method to reduce the back stroking rate of double circuit transmission line, the double back stroking rate and the single back stroking rate will fall by three ground wire, when the footing resistance is 10 ohm, the back stroking rate by three ground wire is 83 percent of by two ground wire

    在分析輸電線路繞擊耐雷性能時，對線路的雷電屏蔽問題進行了分析，提出對擊距法進行改進，充分考慮了風速的影響因素，編寫了具有工程實用價值的計算線路繞擊耐雷水平的程序，此方法可以充分考慮線路結構和雷電參數等對繞擊率的影響。通過對影響500kv同桿雙回線路雷擊跳閘率的各種因素進行了計算和分析，得到以下結論：採用相交法的計算結果比定義法更符合實際運行情況。採用不平衡高絕緣方式和導線逆相序排列可以大大降低雙回同時跳閘率。
  4. And it is commonly regarded as fault - free when the comparative deviation of component parameters are within 5 % of the nominal value, while in practical operations the allowance range could be set flexibly according to different requirements for the circuit performance

    通常認為元件參數的相對偏差絕對值在標稱值的5 %范圍內為無故障，但實際上元件的容差是可以根據對電路性能的不同要求而靈活設定的。
  5. The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented

    採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。
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