緩沖顆粒 的英文怎麼說
中文拼音 [huǎnchōngkēlì]
緩沖顆粒
英文
buffer bead-
In addition, the nb ( oc2hs ) 5 - precursor sbn thin films doping the k + were crystallized with preferred c - axis orientation which is similar with the orientation of the nbcl5 - precursor sbn films
Sbn薄膜表面粗糙度ra為12nm ;加了mgo緩沖層的sbn薄膜更加緻密,結晶顆粒更小,表面也更平整, ra為4nm 。K + is remnant because of uncompleted filtering of kc1 from the precursor solution, and the molar ratio of k + to nb + was found to be 3 : 5
緩沖層為3層的薄膜與襯底的匹配最好。而且,薄膜的顆粒均勻,表面平整, ra只有4nm 。While sintered by radiation heating, the average pore size decreased slowly with increase of temperature at first, and then fell sharply, showing that the pecht technique could achieve consolidated structure at relative low temperature. fe was sintered at on / off of 6 / 1, 12 / 2, 24 / 4, 48 / 8
脈沖大電流燒結fe顆粒材料,燒結體孔徑平均值隨溫度呈波浪關系;輻射加熱燒結體的孔徑平均值隨溫度的升高先緩慢減小,繼續升高溫度,孔徑平均值急劇減小。
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