耗盡效應 的英文怎麼說

中文拼音 [hàojìnxiàoyīng]
耗盡效應 英文
depletion effect
  • : Ⅰ動1 (減損; 消耗) consume; cost 2 [方言] (拖延) waste time; dawdle Ⅱ名詞1 (壞的音信或消息) ...
  • : 盡Ⅰ副詞1 (盡量) to the greatest extent 2 (用在表示方位的詞前面 跟「最」相同) at the furthest ...
  • : Ⅰ名詞(效果; 功用) effect; efficiency; result Ⅱ動詞1 (仿效) imitate; follow the example of 2 ...
  • : 應動詞1 (回答) answer; respond to; echo 2 (滿足要求) comply with; grant 3 (順應; 適應) suit...
  • 耗盡 : exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment
  • 效應 : [物理學] effect; action; influence
  1. The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied

    提出了中子輻照下sicpn結電特性退化的新的理論, pn結區中的輻照陷階在區電場的作用下熱發射得到加強,從而導致pn結正偏和反偏時的復合電流和產生電流的改變。
  2. This thesis regard internal property reorganization in the group of pangang as the research object, from chengdu seamless steel pipe limited liability company with chengdu iron and steel works inside exterior environment reorganizing in front and back commences, making use of to exceed the makel - bot with of five factors competition models and the method of factors analysis, after analyzing the reorganization of the business enterprise a profession for facing competes the situation. develop the development the business enterprise with the profession industry from the international local profession rival circumstance after analyzing the reorganization should the market position of the establishment with develop the strategy target. make use of the swot the analysis the method, to after the reorganization the development strategy of the business enterprise, from manage the angle proceeded the fixed position analyzes, for after the reorganization business enterprise development provided four kinds of developments strategy that eligibility choose : the brave development strategy, request the resources advantage, funds advantage, human resource advantage, technique advantage that new company make the most of new business enterprise in empress in reorganization, is an essential condition to increases to manage the level, quickly technique reforms, develop the high and additional worth product with new product production line, as soon as quikly change to strong and large business enterprise, realizes soon steel aircraft carrier dream ; dispersion strategy, the technology market quota with deal with produce high additional worth product, completely promote business enterprise brand image, extend high carry product of the exaltation product, is a necessary means to increases business enterprise performance, realizes business enterprise target ; defense strategy, adjusting the business enterprise organizes construction, reducing the intensive type in labor and the low additional worth product line, lower bad the property saves the deal, alleviating the business enterprise burden, attaining the casual wear go to battle, benefitting to the challenge that make frontal attack the rival ; withdraw strategy, compress the production of the high depletion and high cost product, simplify the production craft, controlling the cost of the end product in the lower level, is a valid path to increases business enterprise competition ability

    本論文以攀鋼集團內部的資產重組為研究對象,從成都無縫鋼管有限責任公司與成都鋼鐵廠重組前後的內外部環境入手,運用邁克爾?波特的五力競爭模型及因素分析法,分析了重組后的企業所面臨的行業競爭態勢。從國際國內行業競爭對手情況和本行業發展動態分析了重組后企業確立的市場地位和發展戰略目標。運用swot分析法,對重組后企業的發展戰略,從管理角度進行了定位分析,為重組后企業發展提供了可選擇的四種發展戰略:即大膽發展戰略,要求新公司充分運用重組后新企業的資源優勢,資金優勢,人力資源優勢,技術優勢,是提高管理水平,加快技術改造,開發高附加值產品和新產品生產線,快立於強勢企業之林,早日實現「鋼鐵航母」夢的必要條件;分散性戰略,提高產品的科技含量和生產高附加值的產品,全面提升企業品牌形象,擴大高端產品的市場份額,是提高企業益,實現企業目標的必要手段;防禦性戰略,調整企業組織結構,削減勞動密集型和低附加值產品生產線,降低不良資產存量,減輕企業包袱,做到輕裝上陣,有利於迎擊競爭對手的挑戰;退出性戰略,壓縮高消、高成本產品的生產,降低低端產品的比例,精簡生產工藝,將最終產品的成本控制在較低水平,是提高企業競爭力的有途徑。
  3. Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do

    文摘:提出了一種新的建立集約模型的方法,即柵電容修正法.此方法考慮了新型對柵電壓的依賴關系,且可以對各種相對獨立地建模並分別嵌入模型中.另外,利用該方法和密度梯度模型建立了一個多晶區內量子的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明,多晶區內的量子不可忽略,且它對器件特性的影響與多晶耗盡效應相反
  4. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道型場晶體管.詳細規范
  5. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos型場晶體管詳細規范
  6. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos型場晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道型場晶體管詳細規范
  8. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道型場晶體管詳細規范
  9. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道型場晶體管詳細規范
  10. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道型場晶體管.詳細規范
  11. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道型場晶體管.詳細規范
  12. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道型場晶體管.詳細規范
  13. As the output of uv lamp declines over time, the uv lamp should be replaced preferably at 6 to 9 months interval, before its natural burnt out time

    由於紫外光燈會老化而逐漸失,因此定期更換紫外光燈,宜每隔六至九個月更換一次,不可等到紫外光燈自然時才更換。
  14. 3 as the output of uv lamp declines over time, the uv lamp should be replaced preferably at 6 to 9 months interval, before its natural burnt out time

    3由於紫外光燈會日漸老化而逐漸失,因此定期更換紫外光燈,宜每隔六至九個月更換一次,不可等到紫外光燈自然時才更換。
  15. Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse

    在大漏極電壓條件下,溝道電子易於注入到gan緩沖層中,並被緩沖層中的陷阱所俘獲,二維電子氣,從而導致電流崩塌
  16. Hong kong should promote the sustainable use of natural resources to minimise its ecological footprint through improving consumption efficiency, minimising the use of non - renewable resources and re - using, recycling waste and recovering energy from wastes

    香港鼓勵採用符合可持續發展原則的方式運用自然資源,透過改善資源消益、量減少使用不可再生的資源、善用可循環再造的廢物,以及從廢物中回收資源等方法,量減少對其他地區的生態影響。
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