肖特基效應 的英文怎麼說

中文拼音 [xiàotèjīxiàoyīng]
肖特基效應 英文
schottky effect
  • 肖 : 肖名詞（姓氏） a surname
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 特基 : turkey
  • 效應 : [物理學] effect; action; influence
  1. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  2. The results showed that with the increase of the field strength, the conduction of the films was separately dominated by ohm ' s law, schottcky effect, pool - frenkel effect, and fowler - nordheim tunneling breakdown

    結果顯示，隨著場強的增加，導電機制分別以歐姆定律、肖特基效應、普爾弗蘭凱爾效應，和f - n為主，最後發生f - n擊穿。
  3. Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,

    即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
  4. Single walled carbon nanotube ; chemical vapor deposition ; schottky barriers ; field - effect transistor

    單壁碳納米管化學氣相沉積肖特基勢壘場效應晶體管
  5. The detector was characterized to have a cutoff wavelength at 340 nm and the photo - responsivity measurements on the pixels result a uv response as high as 0. 15 a / w, corresponding to an external quantum efficiency of 54. 8 % in the visible - blind spectral ranging from 400 down to 250 nm

    該肖特基光電二極體陣列的光譜響應截止邊為340nm 。在400nm至250nm的紫外光盲區域，光電響應測試顯示該器件在截止邊波長處具有0 . 15a / w的高響應度，相對應的外量子效率為54 . 8 。
  6. And for analog applications by adding a normally - on nmosfet in series with the n - mosfet in an analog circuit respectively. according to spice3f5 and bert2. 0 simulation results, the substrate current of new structure cmos inverter is suppressed to about 50 % of its original value and good hot - carriers resistant behaviors are obtained without adding any extra delay

    0對倒相器的模擬結果表明：新型cmos數字電路結構結構使襯底電流降低約50 ，器件的熱載流子退化效應明顯改善而不會增加電路延遲；巳該電路結構中肖特叢一級管可在nmosfet漏極亙接製作肖特基金半接觸來方便地實現，工藝簡單又無須增加晶元而積。
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