能帶寬度 的英文怎麼說

中文拼音 [néngdàikuāndù]
能帶寬度 英文
energy band width
  • 能 : 能名詞（姓氏） a surname
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  1. Based on the real situation of submarine and antisubmarine warfare ( asw ), according to the classical design theory of transducer or transducer array, a sonar will be researched and made, which has the feature of more wider bandwidth, more lower operating frequency, more lager radiation acoustic power, more farther operating distance, more higher researching efficiency and more higher directive accuracy

    本文根據現代潛戰和反潛戰（ asw ）的實際情況，按照經典的換能器和基陣的設計理論，研製聲吶，旨在擴展其頻帶寬度、降低其工作頻率、增大其發射功率、擴大其作用距離以及提高其搜索效率和定向準確度。
  2. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  3. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  4. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  5. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  6. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  7. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  8. Partial substitution of manganese in lixmn204 by cobalt or lithium can reduce the fermi energy, increase the. net charge of lithium ion, and diminish the value band width, corresponding to the drop of the discharge voltage, the loss of the reversible capacity, and the improvement of the cycling performance due to increasing structural stability, respectively

    在limn2o4中摻入鈷和用鋰離子代替16d位錳離子將使材料的費米能減小，放電電壓降低；摻雜態中部分鋰離子的凈電荷增大，鋰離子與氧離子的相互作用增強，可逆容量降低；摻雜態的價帶寬度變窄，結構的穩定性增加，從而改善循環性能。
  9. The application of multi - level delay charging method has change the conventional charging method and increase the effective energy in downgoing elastic wave, which has unique effect in increasing the bandwidth of effective wave, resolution, s / n ration and interference attenuation and is worth to propagate

    多級延遲爆炸技術的應用，改變了傳統的激發方式，提高了彈性波下傳的有效能量，對提高有效波頻帶寬度、在提高解析度、信噪比、壓制干擾各方面，都具有獨特的作用，具有很好的推廣價值。
  10. The spot responder system which is the necessary part of ctcs is analyzed in the dissertation and three key technologies of the channel in the responder system are researched. firstly, a new kind of rectangular plate magnetic inductive loop antenna is designed to transmit the power frequency. researching the near field inter - inductive characters, the relationship among the inductive efficiency, the perimeter and the conductor width of the antenna is found out

    本文在對ctcs中的點式應答器系統原理及組成進行分析和消化的基礎上，對系統中通道的幾個關鍵技術進行了詳盡的研究，主要分為三個方面: 1 ，提出並研製了新型的片式環形磁感應天線，並對傳輸能量載波的天線的近場互感特性進行了分析，得到互感效率隨天線的周長大小以及導帶寬度的變化規律，並通過計算機模擬和試驗對天線的近場波瓣圖進行了研究;通過分析寬帶匹配技術中的實頻法理論，設計了信號載波天線的寬帶匹配網路。
  11. Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev

    Sns的光學直接帶隙為1 . 3ev ，接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。
  12. On the basis of the research on the channel transit capacity of single vessel, and with the combination of previous research methods, a comprehensive assessment model is set up in view of the effective width of the channel ; the passing depth of the channel ; the time taken for passing at high tide. some new viewpoint are developed from the mathematical analysis on the width of the track belt

    針對基於單船的航道通過能力的研究，結合以往研究方法，確定了以航道有效寬度、航道通航水深及乘潮歷時為考察對象的綜合評定模型，針對將數學方法結合數值模擬對航跡帶寬度的求解提出了一些新的見解。
  13. C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times

    C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。
  14. In all of the optoelectronic materials, cds was paid more attention for the excellent properties, which has commercial and potential applications in light - emitting diodes, solar cells, and other optoelectronic devices

    在眾多半導體納米材料中， cds納米粒子以其優良的性能引起了許多科學家的極大關注。 cds是典型的-族直接帶隙半導體化合物，室溫下其禁帶寬度為2 . 42ev 。
  15. More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3

    利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。
  16. In the transmitted wave, along with the extinction coefficient increment, the width of photonic bandgap is a gradual extension, the edge of photonic bandgap is a gradual faintness, when the extinction coefficient increases to 0. 02, there is already no obvious photonic bandgap

    在透射波中，隨著消光系數的增加，禁帶寬度逐漸擴大，禁帶邊緣逐漸模糊，當消光系數增加到0 . 02時，已經不存在明顯的能帶。
  17. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  18. Sns has an energy gap of eg 1. 3ev, which is very close to the optimum energy gap 1. 5ev of solar cells, and it has a high absorption coefficient ( > 104cm - 1 ) and a high conversion efficiency of about 25 %. in addition, elements sn and s are abundant and non - toxic in nature

    硫化亞錫（ sns ）的禁帶寬度eg 1 . 3ev ，接近太陽能電池的最佳禁帶寬度1 . 5ev ，在理論上其能量轉換效率達到25 % ;其吸收系數? 104cm - 1 ，用作太陽能電池耗材少;其組成元素s和sn在地球上儲量豐富、廉價、無毒，有很好的環境兼容性。
  19. Thirdly, a modified extended chirp scaling ( ecs ) algorithm is presented, which solves the problem of producding fine focused images in the class of chirp scaling ( cs ) algorithm. lt can be used for uwb - sar imaging effectively. the phas e error produced by cs operation are analyzed. a windowed process in two dimension frequency domain before cs operation are proposed. it can improve the quality of image and widen the effectively swath and increase the peak to sidelobe ratio ( pslr )

    然後針對chirpscaling （ cs ）類演算法不能對參考點精確聚焦的問題，提出了一種改進的擴展cs （ ecs ）演算法，實現了對uwb - sar的高效成像；分析了cs操作產生的相位誤差，提出在cs操作之前在二維頻率域對信號加窗，除有效提高信號的峰值旁瓣比（ pslr ）外，還可以提高圖像質量，增加有效測繪帶寬度。
  20. Based on the given linear holstein model, and using the variational method we obtained the ground state properties of the electron - phonon interaction system with cubic and quartic lattice ( phonon ) terms. we obtained the relations between the ground state energy and the phonon squeezing effect and polaron squeezing effect as well as the variation of the polaron bandwidth

    在線性holstein模型的基礎上，採用變分法得出了含晶格（聲子）三次方和四次方勢下系統基態特性，得到了基態能量與聲子壓縮效應和極化子壓縮效應的關系，並求得了極化子能帶寬度的變化規律。
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