能態密度 的英文怎麼說

中文拼音 [néngtàimìdù]
能態密度 英文
density of energy state
  • 能 : 能名詞（姓氏） a surname
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  1. We have calculated one - and two - photon absorption cross sections of the lowest excited states of a series of molecules combined with benzene, stilben, thiophene as center attached with amine, diphenylamine, diethylamine as electron - donor and nitryl as electron - acceptor ; the effects of molecular length, n center and electron - donor on two - photon absorption cross sections have been studied and all calculations have been carried out using the density functional theory at an ab initio level. it is found that the molecular length and the one - photon absorption intensity are quite strongly c orrelated factors, and that a corresponding correlation for the two - photon absorption is decreasing. it is also found that a most crucial role for the two - photon absorption is played by the n center

    我們分別以苯、二苯乙烯、噻吩為中心，氨基、二苯氨基和二乙氨基為電子給體，硝基為電子受體組合形成的分子為研究對象，在從頭計算的水平上用密度泛函理論計算了這些分子在低激發態下的單、雙光子吸收強度，重點研究了分子的長度、中心和給體的供電子能力對分子單、雙光子吸收的影響。研究結果表明，分子長度與單光子吸收強度之間有密切關系，而在雙光子吸收中這種關系較弱；中心在雙光子吸收中具有重要的作用；在中心和受體一定的情況下，增加給體的供電子能力，可提高雙光子吸收強度。
  2. Spontaneous emission can be totally suppressed or strongly enhanced depending on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density. several novel phenomena can be obtained. the spontaneous emission displays an oscillatory behavior, classical light localization, photon - atom bound state, nonzero steady - state population and anomalously large vacuum rabi splitting. and localized mode associated with a defect site in an otherwise perfect photonic crystals, acts as a high - q micro - cavity

    通過原子上能級與光子頻率帶隙邊緣的相對位置或者光子態密度，可以抑制或增強原子的自發輻射。分析並得到了一些奇異的現象，如自發輻射的諧振子行為、光的局域、單光子?原子局域態、上能級中存在非零穩態原子布居數、類似於真空中的拉比頻率分裂等。
  3. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  4. The entropy or number of states of system or subsystem are closely related to interaction of particles and energy level distribution, therefore, to study the temperature dependence of the specific heat may supply some important and useful microscopic information which may play an important role in understanding electronic structure, density of state, phonon spectrum etc. the specific heat measurements at low temperatures also play important roles in the finding of the third law of thermodynamics, the quantum theory of solid and bcs theory for superconducting etc. moreover, specific heat measurements help us to understand the different kinds of phase transitions ( such as : structural phase transition, magnetic phase transition, superconducting phase transition etc. ) and the scaling behavior near the critical point

    系統、子系統的熵或微觀狀態數與微觀粒子間的相互作用及能級分佈密切相關，因此研究比熱與溫度的依賴關系能夠提供被測量系統許多極其有用的微觀信息，對理解固體的電子結構、電子態密度、聲子譜等起著十分重要的作用。低溫比熱的測量和研究對熱力學第三定律、固體量子理論和超導bcs等理論的建立起到了積極的推動作用。比熱研究還有助於認識各類相變如結構相變，磁性相變，超導相變等及臨界點附近的標度規律。
  5. Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state

    由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。
  6. First, we give a brief review of instanton theory of 1 + 1 dimension. then we obtain the instantons in 4 - field model of 2 + 1 dimension

    文章首先回顧了1 + 1維~ 4和sine - gordon場方程靜態瞬子的相關理論，討論了靜態瞬子的能量密度、及其穩定性。
  7. Based on experiments and theory analysis in the past, here we present the most important technology conditions that affecting photosensitivity : 1 、 cycle times, experiments showed that with the increase of cycle times, photosensitivity got worse ; 2 、 h dilution ratio, with the continuously increase of h dilution ratio, h ’ s bombardments on the growing surface enhanced continuously too. these bombardments can eliminate high - energy default configurations priorly and leave stable configurations behind. therefore, growing layer ’ s configurations are impacted ; default state density is decreased and photosensitivity is improved

    Layer - by - layer方法的制備工藝條件很多，我們在以往實驗和理論分析的基礎上，介紹了對光敏性影響最為重要的工藝條件: 1 、循環次數的影響，實驗表明隨著循環次數地增加，光敏性變差; 2 、 h稀釋比的影響，隨著h稀釋比的不斷增加， h對生長表面的轟擊不斷增強，這些轟擊能優先消除高能缺陷結構而留下穩定的結構，從而使生長層結構緻密，減少缺陷態密度，提高薄膜的光敏性。
  8. The radius of color screening in medium is in inverse proportion to the density of color charge and energy. when the radius of color screening is smaller than that of resonance state, strong interaction will decrease sharply and bound states ca n ' t exist

    因為介質中的色屏蔽半徑反比於色荷密度和能量密度，當屏蔽半徑比共振態尺度小時，強相互作用力會減小得很厲害，使得束縛態不可能存在。
  9. In chapter 3, after introducing the curvature - modified electronic structures of single - wall carbon nanotubes, we study the density of electronic states. the relations between the electronic structures and tube - diameters and chiralities are discussed

    第三章介紹了考慮捲曲效應后的單壁碳納米管的電子能級結構，並在此基礎上研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。
  10. In this thesis, we study the density of electronic states of single - wall carbon nanotubes. the effects of tube - diameters and chiralities on the electronic structures are discussed by means of the analytical expression of band structures of single - wall carbon nanotubes under the consideration of curvature effects

    本文中，我們通過考慮捲曲效應后的單壁碳納米管解析的能級結構表達式，研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。
  11. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  12. High energy density is one of the main research fields in physics. the electro - magnetic implosion is one of ways that attain high energy density state under experiment conditions. the electro - magnetic implosion can produce a state of l - 100mj / cm3 in microsecond

    高能量密度狀態（極端高溫高壓的物質狀態）一直是物理學感興趣的領域之一，它的溫度從數十電子伏特到數千電子伏特，壓力范圍為10 ~ （ - 1 ） 10 ~ 2tpa 。
  13. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  14. Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors

    鐵磁半導體的電子能態密度和半金屬性質研究
  15. The sto, ybco and sto / ybco thin films were deposited on laalo3 ( 001 ) ( lao ) substrate by pulsed laser deposition ( pld ). the effects of deposition parameters, such as the substrate temperature, the of target - substrate distance, laser energy density, on the properties of the thin fillms were systematically studied. the surface morphology of the thin films was investigated by atomic force microscopy ( afm ) and scanning electron microscopy ( sem )

    採用脈沖激光沉積技術在laalo3 （ 001 ） （ lao ）基片上生長ybco 、 sto以及sto / ybco集成薄膜，系統研究了基片溫度、基片表面狀態、氧分壓、激光能量密度、脈沖重復頻率等工藝參數對薄膜表面性能、結晶情況的影響，優化了ybco 、 sto薄膜生長的工藝參數，運用afm 、 sem 、 xrd等分析手段表徵薄膜的微觀性能，分析結果表明：薄膜表面平整、結晶良好、 c軸織構。
  16. The properties of spontaneous emission depend not only on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density but also on the relative distance of the atomic space position from the sidebrand. and we study other property of spontaneous emission

    其性質除了依賴于原子上能級與光子頻率帶隙邊緣的相對位置或光子態密度，還依賴于原子的空間位置與側支距離。並對原子的自發輻射的其它特性進行了分析。
  17. Self - assembled semiconductor quantum dots are widely used in fabrications of nano - electronic devices, since they have few defects, mature growth technology and electronic state density of 6 function

    自組裝半導體量子點由於缺陷少、生長技術成熟和具有函數形式的能態密度等優點而被廣泛用於納米電子器件制備中。
  18. It ' s around the fermi energy grade that the state densities were the greatest in y - mno2, limn2o4 and li2mn2o4, indicating that three kinds of materials were suitable to intercalation and deintercalation of lithium ion

    在（ - mno2 、 limn2o4和li2mn2o4三種材料中，都是費米能級周圍的態密度最大，表明三種電極材料容易得到或失去電子。
  19. In addition, the control of spontaneous emission of a three - level atom embedded in photonic crystals was investigated in this paper, because the model of two - level atom is siple. as it shows, the properties of spontaneous emission depend not only on the relative position of the resonant frequency from the edge of the photonic band gap and the photonic mode density but also on the intial atomic state

    二能級畢竟是最簡單的模型，故在最後，還對光子晶體中三能級原子的自發輻射特性進行了研究。結果表明，其自發輻射除了依賴于原子上能級與光子頻率帶隙邊緣的相對位置或光子態密度外，還依賴于原子的初始狀態。
  20. It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states

    明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
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