脈壓寬 的英文怎麼說

中文拼音 [màiyākuān]
脈壓寬 英文
widened pulse pressure
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 壓 : 壓構詞成分。
  1. Because pressing of arteries and veins increased the impact to blood - vessel greatly, this is, make easy exhaustion mixes the stretch ingredient of tube wall rupture, easy development is aneurism and possible burst, at the same time of hemal wall inside film is injured easily and bring about sclerosis of arterial congee appearance and thrombosis, the hemal sclerosis that and be pressed with wide arteries and veins coexists and diastolic pressure are too low return burden of can aggravating heart and blood of influence coronal arteries and veins to offer

    這是因為脈壓大就增加了對血管的沖擊，使管壁的彈性成分輕易疲憊和斷裂，易發展為動脈瘤並有可能破裂，同時血管壁的內膜輕易損傷而導致動脈粥樣硬化及血栓形成，並且與寬脈壓並存的血管硬化及舒張壓過低還會加重心臟負擔和影響冠脈血供。
  2. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  3. The feedback of the output voltage is the major control loop. to achieve better frequency response and disturbance rejection of the input voltage, a input voltage feed - forward system is introduced in control loop. the duty - cycle of pwm applied at the gate of power mosfet is modulated by both input and output voltage

    該晶元採用的控制方式為電壓型pwm （脈沖寬度調制， pulsewidthmodulation ）控制方式，以輸出電壓反饋作為主要控制參量，同時為了提高晶元對輸入電壓擾動的響應速度，採用了輸入電壓前饋方法，將輸入電壓因素引入了反饋控制環中，通過對輸入輸出電壓的檢測，控制加在功率mos管柵極電壓上矩形脈沖的占空比，進而調節輸出電壓。
  4. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )

    影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。
  5. Pulse compression technique and large timeband product signals such as linear frequency modulation signals, nolinear frequency modulation signals, phase coded signals and so on are widely used in modern radar systems to improve the resolving power both in range and in speed domain

    現代雷達為了提高雷達作用距離和速度分辨力、距離分辨力，廣泛採用了脈沖壓縮技術及大時寬帶脈壓信號如：線形調頻、非線形調頻、相位編碼信號等。
  6. Due to the complexity of the structure and control of cycloconverter - type three - phase hf link inverter for soft - switching based on phase - shift - controlled full - bridge mode, a simple and optimized vvvf control strategy is proposed. this control strategy includes : produced pwm by space voltage vector ( svm ) and equivalent carrier frequency fe = 1 / te are introduced into the pdm control of the cycloconverter ; softened equivalent pwm wave is generated at the notches of hf voltage pulses ; the harmonious control between regulating pulse width by phase - shifted angle and regulating voltage of equivalent pwm is to minimize the harmonics content of output voltage of the inverter

    西安理工大學博士學位論文針對這種前級移相全橋軟開關周波變流型三相高頻鏈逆變器結構和控制的復雜性，提出了一種實現簡單而整體優化的vvvf控制策略:將空間電壓矢量產生p姍的方法svm和等效載波頻率fe = 1 / te引入到周波變流器的pdm控制;按高頻電壓脈沖前後沿軟化等效p翎波;用移相調節高頻脈沖寬度和等效p姍調壓協調控制逆變器輸出電壓，在滿足輸出電壓條件下使諧波最小。
  7. Lfm signal is a classic pulse compression signal and it is one of the ultra - wideband radar waveforms, there is sophisticated theoretical basis of its generating, receiving and processing

    線性調頻信號作為一種典型的脈壓信號，同時也是超寬帶雷達調制波形中的一種，其產生和接收處理已具備了較為成熟的理論研究。
  8. It works at high frequency with a selectable pin outside ; the working frequency is fixed at 640k / 1. 2mhz. so far as the output signal of the single - chip ic is concerned, the maximum time proportion of its high level is 88 percent, but the minimum one is 10 percent

    該控制器為pwm脈沖寬度調制方式;電路正常工作溫度范圍為- 20oc 85oc ;工作開關頻率根據外圍電路輸出電壓需要為640k / 1 . 2mhz可選;輸出信號的最大占空比為90 % ，最小占空比為10 % ，晶元主要應用於lcd電壓電源管理設備。
  9. The tests of e - o applications by our flux ktp has been realized, the results showed : optical waveguides fabricated by using an ion - exchange process, which have an exchange - ion concentration depth profile and refractive - index profile, is close to a complementary error - function distribution, optical homogeneity and device thermal stability is much better. amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2. 5 % at 1064 nm. high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width, this modulator had run for three years, and the crystal did n ' t blackened, it showed our low conductivity flux ktp can endure high modulation voltage for a very long time

    Ktp晶體的電光應用試驗表明：用離子交換法製作的電光波導，其離子交換濃度、折射率變化符合餘弦誤差函數，光學均勻性以及器件的溫度穩定性較好；製作的強度調制電光開關，消光比為150 ： 1 ，對1064nm激光的插入損耗為2 . 5 ；製作的電光調制器用於激光脈沖整形試驗，從脈沖寬度50ns的激光脈沖削出脈寬1ns的高質量光脈沖，該電光開關經過長達三年多的使用，沒有出現晶體變黑現象，說明本實驗的低電導率ktp晶體能夠耐受長時間的調制電壓。
  10. In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments

    在hipib轟擊材料表面方面，本文選擇成分由c ~ （ n + ） （ 30 ）和h ~ + （ 70 ）組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼（ w6mo5cr4v2 ）進行表面輻照處理，研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響，探討了hipib與材料表面相互作用的物理機制。
  11. Most drive systems offer a choice between transistorized silicone - controlled rectifiers and pulse width modulation over the full range of amplified voltages

    大多數驅動系統提供兩個調節全程放大電壓的選擇：晶體管化的硅樹脂控制整流器和脈沖寬度調制器。
  12. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  13. The circuit utilizes 1mhz current - mode pulse width modulation ( pwm ) control to allow small input and output capacitors and a small inductor, while reducing the circuit ’ s volume and minimizing the input supply ripple to 15mv

    該電路採用頻率為1mhz的電流反饋模式脈沖寬度調制模式，可使外部電路選用小的輸入、輸出電容以及小電感，減小了電路的體積，同時能將輸入電壓紋波減小到15mv 。
  14. However, it is difficult to make the product available because most of the academic institution focused on certain aspect only. the experts indicate that the ic designers should know more about the system though they don ’ t design the system directly. it points out a way for us ic designers when we are engaged in the research work

    本文提出的開關變換器，利用反饋原理將輸出電壓穩定在某一需要的值，根據負載的不同而採取兩種控制模式，即脈沖寬度調制（ pwm - pulsewidthmodulation ）模式和脈沖頻率調制（ pfm - pulsefrequencymodulation ）模式。
  15. The design of the circuit ? key parameters including pulse width in the level shifter part and delay time of the filter circuit, and the necessity to add a limiting current resistor at source the ldmos were emphatic analyzed. author finished the design of each sub - circuit

    對電路關鍵參數高低壓電平位移脈沖寬度、高端濾波電路濾波寬度的設計及在ldmos源端加入限流電阻的必要性進行了重點分析，完成了各單元電路的設計。
  16. Alpha - magnet, the beam energy choosing and pulse width compressing element, is a key part of the injector. it plays an important role in 30mev linac system

    -磁鐵的功能是束流電子能量選擇和脈沖寬度壓縮，在30mevlinac系統中起著非常重要的作用。
  17. Positive negative pulse width, totalize, peak voltage, time interval average and time interval delay

    正負脈波寬度總和峰值電壓時間間隔平均及時間間隔延遲
  18. The main circuit of the design in this article we used is fb zvs pwm dc / dc converter, full bridge zero voltage switching pulse width modulation dc / dc converter, which is a full bridge circuit composed of four power switches using resonance to implement zero voltage when turning - on or turning - off

    本文設計的通信電源充電模塊的主電路採用的是fbzvspwmdc dc變換器，即全橋零電壓開關脈沖寬度調制的直流變換器，它是由4個功率開關管組成的全橋電路，利用諧振使每個開關管在零電壓的條件下完成導通和關斷。
  19. The maximum output of ion beam current is obtained at a charging voltage of 8 kv for the magnetic field power system, which is in accordance with the theory of magnetic insulation. the ion beam parameters are an accelerating voltage of 300 kv, an ion current density of 300 a / cm2 with beam pu lse width of 80 ns and with composition of 70 % proton and 30 % carbon ions

    在磁場電源電壓為8kv ，獲得了與磁絕緣理論相符的最大離子束流密度輸出，離子束參數為：加速電壓300kv ，離子束流密度300a cm ~ 2 ，離子束脈沖寬度80ns ，成分約為70 h離子和30 c離子。
  20. The system had auto startup and stop function by software. the dsp based motor control system had lower current harmonic, more efficient use of supply voltage than spwm, less switch loss. on the other hand, this system make a lower noise for the pwm modulation. frequency is up to 20khz

    本系統實現了電機的軟啟動、軟關斷功能，電機電流的諧波失真較少，電壓利用率比常規的正弦波脈沖寬度調制（ spwm ）有了較大的提高，器件的開關損耗也得到了明顯的減少。
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