脈沖反射技術 的英文怎麼說

中文拼音 [màichōngfǎnshèjìshù]
脈沖反射技術 英文
pulse reflection technique
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 反 : Ⅰ名詞1 （方向相背） reverse side 2 （造反） rebellion 3 （指反革命、反動派） counterrevolutionari...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 技 : 名詞（技能; 本領） skill; ability; trick; technique
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  1. Commonly used specification for a - mode ultrasonic flaw detector using pulse echo technique

    A型脈沖反射式超聲波探傷儀通用技術條件
  2. On the design of the system, the thickness measure system of mems chip is built based on lbu and pump - probe technology. on the analysis of data, the reflectivity curve is analyzed using the law of reflectivity change induced by ultrasound, and the thickness is calculated using the system designed by the article, to aluminum film the size of about 20nm can be measured, when the film be measured is single layer, the relative error of the system is less than 2 %, when the film be measured is double layer, the relative error of the system is less than 10 %

    在基礎理論方面研究了激光（特別是超短脈沖激光）超聲的激勵機理，探討了激光調制技術以提高系統信噪比，闡述了泵束探針束技術及相關實驗設置；在系統設計上，以激光超聲為基本原理，以泵束探針束技術為系統設計方案完成了mems基片厚度測量系統的設計；在數據分析方法上，利用聲致光反射率變化的一般規律對測得的光反射率曲線進行分析，確定超聲回波在薄膜兩界面間來回傳播的時間，以計算薄膜的厚度。
  3. The reflected wave will be received by the receive antenna and transferred to digital data. we can analyze the data that saved by the computer of gpr to deduce the medium ' s property, situation, location and so on. being a kind of nondestructive, untouched method, it has many advantages such as nondestructive, rapidness, simpleness and high precision, so it will have wide applications in the ways of examination, control and maintenance to road quality, especially for highway

    路用探地雷達是近幾年發展起來的、應用於公路無損檢測的一項新技術，它利用超寬帶脈沖電磁波對路面結構層進行探測，當雷達發射天線發射的電磁波在路面結構層中傳播時會在介電特性突變處產生反射和透射，反射回來的波經由接收天線接收並轉化為數字信號儲存起來，通過分析探地雷達回波信號來估計路面結構層的性質、狀態和位置等特徵。
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  5. Standard test method for measurement of ultrasonic attenuation coefficients of advanced ceramics by pulse - echo contact technique

    用脈沖反射接觸技術測量高級陶瓷超聲衰減系數的標準試驗方法
  6. As a method to obtain higher sbs reflectivity by improving the monochromaticity of laser system, the ld end - pumped pulse - microchip laser operated on high - repetition and single - frequency has also been researched. in section v, we revised the previous theoretical model for passive - q - switched laser using cr4 + : nd3 + : yag by introducing the space dependence between the photons and inversion populations in microchip resonator

    由於泵浦激光的線寬對sbs反射率有顯著影響，而利用單縱模、高重復頻率運轉的脈沖微片激光器作為dpl系統種子光源來提高激光系統單色性是一種可行的技術方案。
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