脈沖電壓表 的英文怎麼說

中文拼音 [màichōngdiànyābiǎo]
脈沖電壓表 英文
pulsing voltmeter
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 電壓 : voltage; electric tension; electric voltage
  1. Incondition of surface anti - corrision and insulation coat of metal and tiny hole of steel where resistance and crack is very small, when supplying a high voltage, gas crack will be punctured and electric spark discharging will occur, now send a pulse signal to the alarming circuit the alarmer can send out sound and light to alarm. we can do leak hunting on the coating according to this principle

    金屬表面絕緣防腐層過薄、漏鐵及漏電微孔處的電阻值和氣隙密度都很小，當有高壓經過時就形成氣隙擊穿而產生火花放電，給報警電路產生一個脈沖信號，報警器發出聲光報警，根據這一原理達到防腐層檢漏目的。
  2. Second, the results of theory analysis and simulation research show that the output of one cycle controlled bridge switching power amplifier have dc offset because of the nonideal characteristic of reset signal. the magnitude of output dc offset voltage is proportional to width of reset pulse. a voltage compensation technique is used to solve this question, and the computation formula of compensation voltage is gived. the circuit compensated and not are researched through simulation and experiment, which results show that compensated circuit solve the output dc offset effectively

    其次，理論分析和模擬研究結果表明，由於復位脈沖的非理想特性，單周控制的全橋開關功率放大器輸出端存在直流偏置問題，其大小與復位脈沖的寬度成正比。針對輸出直流偏置問題，提出了電壓補償的改進方案，給出了補償電壓的具體計算公式。對補償前和補償后的方案進行了對比模擬研究和實驗研究。
  3. All analysis and simulations results indicate several methods improving the insulation recovery of spark gap switch : ( 1 ) using the gas with good thermal conductivity, such as h2 and sf6 ; ( 2 ) using the gas flow ; ( 3 ) utilizing the v / p cure ; ( 4 ) modifying the geometry and size of the electrode ; ( 5 ) using the gas with good electronegativity, such as sf6. some experiments on the multi - pulse operation of high power spark gap switch are carried out. the insulation recoveries of switch without and with gas flow are both investigated

    結合理論分析和模擬結果，提出了氣體火花開關多脈沖運行特性可採用如下方法: （ 1 ）使用導熱性能好的氣體，如h2 、 sf6等; （ 2 ）採用吹氣的方法; （ 3 ）增大氣壓，在電極表面增加細小結構，構造平穩的v / p曲線; （ 4 ）改良開關電極結構和尺寸，採用奶頭-半球結構的電極; （ 5 ）使用電負性強的氣體作為開關絕緣氣體，如sf6 。
  4. Pulse response characteristic of a quasi - peak voltmetre

    準峰值電壓表的脈沖響應特徵
  5. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )

    影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。
  6. Secondly the detection precision is only related to the synchronization phase but not to the amplitude of the mainline voltage because that it uses the optimized pulses synchronous with the mainline voltage as modulation signals. thirdly it decreases the requirement of the input low pass filter and eliminates the error resulting from the direct component and even harmonics of load current. the most significant merit is that it can eliminate the effect of a few low order odd harmonics and the detecting circuit is easy to be implemented

    模擬和實驗結果表明該方法的主要優點有：不需使用乘法器進行信號調制，調制信號採用與電網電壓同步的優化特定脈沖，其檢測精度只與同步相位有關，而與電網電壓幅值無關；降低了對輸入低通濾波器的通頻帶要求，直流和偶次諧波分量對檢測精度沒有影響；突出的優點是可以消除有限個低奇次諧波對檢測結果的影響。
  7. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電過電壓保護器件的影響更加嚴重，本文首次採用不同間歇時間雙脈沖電流沖擊對氧化鋅電阻進行了多次試驗，試驗表明：氧化鋅電阻在雙脈沖電流沖擊下更容易出現老化破壞現象，間歇時間越短，電阻能耐受的沖擊次數越少；此外，直流u _ （ 1ma ）值隨沖擊次數的增加具有快一慢一快的下降過程。
  8. 2 for an impulse source there shall be a peak reading instrument voltmeter connected directly to the electrode head, indicating continually the potential of the electrode with or without a grounded test wire in the chamber

    脈沖火花機，電壓表直接接在試驗電極上，顯示的是測試電線沒有接地的情況下的峰值電壓。
  9. In this paper, a new method is proposed, using the instant response of the induction motor to voltage pulse and current break when the motor stops

    本文首先利用感應電動機對脈沖電壓和階躍電流的瞬態響應，對電機參數進行了靜態測量，模擬結果表明了方法的可行性。
  10. The tests of e - o applications by our flux ktp has been realized, the results showed : optical waveguides fabricated by using an ion - exchange process, which have an exchange - ion concentration depth profile and refractive - index profile, is close to a complementary error - function distribution, optical homogeneity and device thermal stability is much better. amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2. 5 % at 1064 nm. high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width, this modulator had run for three years, and the crystal did n ' t blackened, it showed our low conductivity flux ktp can endure high modulation voltage for a very long time

    Ktp晶體的電光應用試驗表明：用離子交換法製作的電光波導，其離子交換濃度、折射率變化符合餘弦誤差函數，光學均勻性以及器件的溫度穩定性較好；製作的強度調制電光開關，消光比為150 ： 1 ，對1064nm激光的插入損耗為2 . 5 ；製作的電光調制器用於激光脈沖整形試驗，從脈沖寬度50ns的激光脈沖削出脈寬1ns的高質量光脈沖，該電光開關經過長達三年多的使用，沒有出現晶體變黑現象，說明本實驗的低電導率ktp晶體能夠耐受長時間的調制電壓。
  11. The compensator was h ( s ) = 2370s. the results of simulation showed that attenuation factor of the first order of the third control system was as much as ten times of the value of the system without controller

    通過模擬表明，採用速率傳感器，在前三塊帆板上布置壓電驅動器時，一階最大衰減因子為無控時的10倍，可以使脈沖衰減時間縮短15倍。
  12. In the hipib strengthening experiments, samples of high - speed steel ( w6mo5cr4v2 ) were irradiated by abstract hipib ( cn + = 30 %, h + = 70 %, ion energy 250 kev, ion current density 60 - 180a / cm2, pulse duration 80 - 100 ns ). microstructure investigation and properties characterization of the treated hss samples were carried out to investigate the effect of current density and pulse number of incident hipib on the surface modification treatment. the physical mechanism of the hipib - solid interaction was established based on the experiments

    在hipib轟擊材料表面方面，本文選擇成分由c ~ （ n + ） （ 30 ）和h ~ + （ 70 ）組成、加速電壓為250kv 、脈沖寬度為80 100ns的hipib對高速鋼（ w6mo5cr4v2 ）進行表面輻照處理，研究離子束流密度和脈沖次數對高速鋼微觀結構和宏觀性能的影響，探討了hipib與材料表面相互作用的物理機制。
  13. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  14. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  15. Solid laser pumped by semiconductor laser has the advantages of laser diode and solid laser, so it develops rapidly in recent years and gets the extensive application in the fields of military, communication, processing and scientific research, etc. in order to meet the demands for laser power of semiconductor solid laser pump solid yag laser, i synthetically adopt the singlechip digital automatic control technology which is extensively used in the intelligent instruments, products of electromechanical integration and automatic control system, lcd technology, pc switch technology and steady voltage, invariable current technology

    半導體激光泵浦的固體激光器由於兼有了激光二極體和固體激光器的雙重優點，近年來得到迅速發展，並在軍事、通訊、加工和科研等領域中得到廣泛的應用。本文針對半導體固體激光器泵浦固體yag激光器系統對激光電源的要求，並且綜合運用了當前在智能儀表、機電一體化產品、自動控制系統中應用廣泛的單片機數字化自動控制技術、 lcd顯示技術、 pc開關技術及穩壓、恆流技術，研製了脈沖半導體激光電源。
  16. 2. the pre - flashover phenomena of alumina insulators in vacuum have been investigated. according to the experimental results, a reversed pre - flashover current was observed repetitively, which often occurs at the tail of pulse voltage close to zero ( sometimes after the applied pulse voltage )

    首次發現了大量的、重復性的反向預閃絡現象，即在沖擊電壓波尾附近電壓幅值已經接近零、甚至在沖擊電壓作用完后（已沒有電壓）的情況下仍然存在試樣表面發光現象，同時伴有反向的電流脈沖。
  17. It is showed in this thesis that temperature is very important to single photon detection, but too low temperature is not good for detection because of afterpulse and the breakdown voltage

    本文的研究表明，溫度對單光子探測有著非常重要的影響，考慮到后脈沖的影響以及雪崩電壓的變化，溫度並不是越低越好。
  18. It was found that large scale single crystal ttf m - nbp film can be obtained by this method. atomic resolution surface images were observed both with atomic force microscope and scanning tunneling microscope. high density data storage was realized by applying voltage pulses between the stm tip and the substrate

    用原子力顯微鏡afm和掃描隧道顯微鏡stm都觀察到了ttf m - nbp薄膜表面的原子級分辨像。通過stm針尖施加脈沖電壓在ttf m - nbp薄膜上實現了納米級的信息存儲，最小記錄點直徑約為1 . 2nm 。
  19. Electroporation will acceleration cellular confluence of protoplast and muscles, but the significant change of the ratio of expression and the time of expression was not observed form exponent treat with low pressure and short impulse of 100v, 50 millisecond

    電擊可以促進原生質體與肌肉細胞的融合，但100v ， 50毫秒的低壓、短脈沖電擊對grf在動物體內的表達量上沒有被觀察到顯著差異。
  20. Fresh claret was processed by high - voltage pulsed electric field with changed electric - field intensity, the treatment results suggested that some changes in wine chromaticity. such treatment could accelerate wine aging

    摘要通過改變電場強度，研究高壓脈沖電場時新鮮干紅葡萄酒色度的影響。結果表明：處理后酒樣的色度有一定程度的提高，其變化趨勢基本符合陳釀效果。
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