膜過薄 的英文怎麼說

中文拼音 [guò]
膜過薄 英文
lepthymenia
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • : 過Ⅰ動詞[口語] (超越) go beyond the limit; undue; excessiveⅡ名詞(姓氏) a surname
  • : 名詞[方言] (浮萍) duckweed
  1. Necessary blood proteins such as albumin and globulin cannot pass through the membrane, because their molecules are too large.

    像蛋白和球蛋白這類人體需要的血液蛋白質,因為它們的分子大,所以不會透
  2. Workplace air. x - ray determination of the conventional alveolate fraction of crystalline silica. sampling by membrane filter

    工作場所空氣. x射線測定結晶二氧化硅的常規蜂窩狀部分.用濾器取樣
  3. Plastics - determination of the gas transmission rate of films and thin sheets under atmospheric pressure - manometric method

    塑料.在大氣壓力下板的氣體透率的測定.測壓法
  4. Pentane insolubles by membrane filtration

    濾法測定戊烷不溶物
  5. Standard test method for pentane insolubles by membrane filtration

    濾法測定戊烷不溶物的標準試驗方法
  6. Water tank ultra violet ray insect lamp. diaphram strainer anti osmosis treatment kitchen equipmcm laundry equipment radiogenic waste water treatment

    菌器瀘器逆滲透處理廚房設備洗衣房設備放射性廢水處理。
  7. Water quality - detection and enumeration of escherichia coli and coliform bacteria - part 1 : membrane filtration method

    水質.大腸桿菌和大腸菌類細菌的檢測與計數.第1部分:濾法
  8. Water quality - detection and enumeration of escherichia coli and coliform bacteria in surface and waste water - membrane filtration method

    水質.地表水和廢水中大腸桿菌和大腸桿菌類的檢測和計數.濾法
  9. Our physical picture of guided light propagation is that of light traveling in zigzag fashion through the film.

    導波光的傳播的物理圖象就是光按Z字形方式通傳輸。
  10. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對( 100 )單晶硅及( 110 )單晶硅、多晶硅、干氧、濕氧、 lto、標準氮化硅、低應力氮化硅、氮化鋁、氧化鋅等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入程中觀測到的兩個力學相的變化。
  11. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化而言,具有非球對稱電荷分佈的非s態離子tb與濺射沉積程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶垂直磁各向異性的主要部分, tbco內的磁偶極相互作用構成了其次要部分。
  12. Then the water will pass through the membrane into the salt solution.

    然後,水通進入鹽水中。
  13. Standard test method for detection and enumeration of clostridium perfringens from water and extracted sediments by membrane filtration

    濾法從水和萃取沉澱物中檢測和計算產氣莢梭菌的標準試驗方法
  14. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚兩大類。為了滿足一定的擊穿電壓,soi高壓電路一般採用漂移區線性摻雜技術,但其工藝復雜,且自熱效應嚴重;而厚soi高壓集成電路可以通移植體硅cmos技術來實現高壓,但是由於其硅較厚,介質隔離成為厚soi高壓集成電路的關鍵技術。
  15. Performing a refractive procedure on a cornea that is too thin may result in blinding complications

    施於的角的屈光手術可能導致致盲並發癥。
  16. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明:隨著工作氣壓的減小,的晶粒尺寸有所減小;通提高氫氣稀釋度,利用原子氫在成程中起的刻蝕作用,可以穩定結晶相併去除雜相;選擇適當的熱絲距離能保證反應氣體充分分解,又使襯底具有較高的冷度,是形成納米的重要條件;採用分步碳化法可以提高形核密度,有利於獲得高質量的納米- sic;襯底施加負偏壓可以明顯提高襯底表面的基團的活性,因負偏壓產生的離子轟擊還能造成高的表面缺陷密度,形成更多的形核位置。
  17. Otherwise we also invest the effect of different parameters such as substrate temperature and o2 / ar ratio on zno film while growing, when the films fabricated at 600 and o2 : ar ratio equal to 1 : 2, the best quality films can be obtained

    在linbo3襯底上生長zno程中,分析了襯底溫度和氧氣與氬氣含量對質量的影響。實驗表明在的襯底為600和o2 : ar為2 : 1時生長的zno擇優取向強,晶體性能好。
  18. Study on process of film deposited by laser plasma

    激光誘導等離子體淀積程的研究
  19. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下: ( 1 )研究了電子在雪崩碰撞和分解電離后的角分佈情況,結果表明基片附近電子的散射以大角散射為主,在維持輝光放電的條件下,較高的偏壓和工作氣壓對金剛石的橫向連續成是有益的; ( 2 )考慮了低溫合成金剛石程中電子與各種碎片粒子的復合程,給出了不同的復合系數情況下的粒子數分佈,結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  20. Intralase makes lasik safer by replacing the hand - held microkeratome blade with the silent computer - guided precision of a laser. the size and thickness of the flap can be manually adjusted

    以往因度數深或眼角膜過薄而不適宜做手術的人士,現在能夠使用intralase而重新評估手術的可能性。
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