自偏壓 的英文怎麼說

中文拼音 [piān]
自偏壓 英文
auto bias
  • : Ⅰ代詞(自己) self; oneself; one s own Ⅱ副詞(自然;當然) certainly; of course; naturally; willin...
  • : Ⅰ形容詞1 (不正; 歪斜) inclined to one side; slanting; leaning 2 (只側重一面) partial; prejudi...
  • : 壓構詞成分。
  1. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定下隨時間變化的電流維持振蕩,振蕩產生的條件依賴于其結構參數,摻雜濃度和外加的大小。
  2. Auto bias circuit

    自偏壓電路
  3. Deposition of zno films on thick diamond films

    射頻輝光放電自偏壓對類金剛石碳膜結構和性能的影響
  4. ( 2 ) the distribution, flux and flowrate of the gases are exactly under control. in order to grow high - quality diamond film on si substrate, the quality of diamond film on a mirror - polished single - crystal si surface is examined experimentally, and the enhancement mechanisms of positive or negative bias on nuclear formation is interpreted theoretically

    為了在si襯底上生長高質量的金剛石薄膜,對在鏡面拋光si表面上的成核進行了深入的實驗研究,對襯底(正、負)的增強成核作用給出了己的解釋。
  5. On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply

    在電路設計上一方面改進運放結構,採用低共源共柵結構以提高其增益,另一方面整體傳感電路採用置結構和共源共柵電流鏡結構,在低電源電下成功設計了低功耗、低失調、高線性度和高電源電抑制比的ptat電流產生電路。
  6. Such variations are found that due to applied magnetic field from the substrate. the aspect and brightness of the glow and the self - bias voltage for the target changes significantly

    實驗中觀察到,在外加磁場的作用下,等離子體放電的輝光的明亮程度及外貌和靶面自偏壓發生了明顯變化。
  7. The chip can be widely used in mp3 player, pda, digital camera, cells phone and portable products etc. this thesis first introduces the basic theory of switching power supply. the operating theory of this circuit has been demonstrated. the operating principle and simulation analysis about band gap reference, self - biased current source, one shot circuit, hysteresis comparator, and current - limit circuit have been particularly expounded in this thesis

    本文首先闡述了開關電源的工作原理,詳細介紹了本電路的整體工作原理,最後重點介紹了置電流源電路、基準源電路、單穩態觸發器電路、峰值電流限制及低電池電遲滯比較器的工作原理,並利用eda工具larker ? ams 、 hspice對電路進行了完整的設計和模擬模擬,給出了合理的電路數據,各子模塊電路的電特性參數均達到或優于設計所需指標。
  8. A novel self - bias high - voltage device structure for the start - up circuit of an off - line switching model power supply ic is described

    摘要設計了一種新的用於離線式集成開關電源啟動電路的置高器件結構。
  9. Similarly, for spin - valve structures giant - magnetoresistance becomes larger when the bias increases. it becomes smaller when the bias is negative

    同樣,旋閥結構的u增加時巨磁電阻增大,加負時巨磁電阻減小。
  10. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計,採用置結構和鏡像電流鏡結構,利用運放的輸出電作為運放的置電,節省了置電路,降低了功耗;使用低溫度系數的多晶硅高值電阻,降低了電阻溫漂對電路的影響;在電源電不變的情況下,為了減小功耗就必須減小工作電流,而增大電阻的阻值能有效地減小工作電流,多晶硅高值電阻的方塊電阻很大,可以節省版圖面積。
  11. In charter iii, the author designed a set of direct current bias and a schematics for measuring signal, by which the character of conduction of the laser plasma in electrical field caused by bias was studied

    第三章中本文作者己設計了一套直流裝置及信號測量裝置及方案,從激光等離子體在電場作用下的導通特性測量,研究了對激光等離子體空間膨脹過程的影響機理。
  12. When the applied bias voltage is changed within positive slope regions of u - i curve, the domain boundary between the high and low electric field domains does not moved, and the size of electric field domains regions is also not altered, while the electric field strengths are adjusted

    用模擬計算的方法研究了弱耦合摻雜gaaa / alas超晶格在時變電下的場疇機制和固定下電流維持振蕩。在時變電下,一定摻雜的超晶格處于穩定的電場疇, u - i曲線呈現鋸齒狀波形。
  13. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流維持振蕩現象是其中的一個非常有意義的分支,該現象可用來製作電調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定下電流維持振蕩產生的條件進行了深入的探討,並結合宏觀模型和微觀模型對超晶格在時變電作用下的電-電流特性以及固定作用下的電流特性進行了模擬計算。
  14. This machine adopts high - level siemens plc concentration control, set up with computer controlled gear shifting vacuum gauge, and a three - flow controller, one set of contra - variant bias power and four - route contra - variant arc power supply, four side - installed heating tubes, computer pid automatic temperature control device, 60 and 100 two kinds versatile arc supply

    該設備採用先進的西門子plc集中控制,裝有電腦動換檔真空計和三路流量控制器,一套逆變和四路逆變弧電源,邊裝式加熱管四支,電腦pid動控溫, 60和100兩種弧源通用。
  15. First, we extended the liberman model of collisionless rf sheath. taking into account elastic collisions and charge - exchange collisions between ions and neutral particles, we established a self - consistent model describing the dynamics of rf sheath driven by a sinusoidal current source. the effects of collisions and rf - biased source power on the instantaneous thickness of the rf sheath and the sheath electric fields were studied

    首先將liberman的無碰撞射頻鞘層模型進行推廣,考慮了離子與中性粒子的電荷交換碰撞效應,建立了描述碰撞射頻等離子體鞘層動力學特性的洽模型,研究了碰撞效應,射頻,電源參數等對射頻鞘層的瞬時厚度及電場分佈的影響。
  16. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦動換檔真空計,三路流量控制器,邊裝式加熱管,電腦pid動控溫,配備兩套邊裝式平面磁控靶,逆變式磁控電源和逆變式電源,操作簡單,膜層細膩,廣泛適用於鍍制各種裝飾膜層和復合膜層。
  17. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a two - flow controller, side - installed heating tube, computer pid automatic temperature control, and 32 sets contra - variant arc power supply and contra - variant bias power. they are widely used in plating different thick film layers of mono - metal and many compound film layers

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦動換檔真空計,兩路流量控制器,邊裝式加熱管,電腦pid動控溫,配備32隻逆變式弧電源和逆變,適用於鍍制各種特種單金屬厚膜層或多鐘金屬復合膜層。
  18. Automatic bias compensation

    補償
  19. The structure and properties of the device, made by resurf technology, are analyzed and simulated

    對一個resurf高(功率)器件的此種置方法進行了原理分析和模擬模擬。
  20. By solving the equation numerically, the effects of diffusion on the property of the self - deflection of the photorefractive solitons are studied. the results show that the spatial shifts of bright screening solitons and sp solitons depend directly on the voltage factor. for dark solitons, the stronger the input intensity is, the larger the bending - angle is, whereas bright solitons depend on the input intensity nonlinearly

    在考慮一階擴散效應后,通過數值計算分析和比較了三種光折變空間孤子的轉特性,得出屏蔽和屏蔽光伏明孤子的轉量與分系數成近似線性關系,與入射光強成非線性關系,而暗孤子轉量隨入射光強的增加而增加。
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