自摻雜 的英文怎麼說

中文拼音 [zìchānzá]
自摻雜 英文
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  • 自 : Ⅰ代詞（自己） self; oneself; one s own Ⅱ副詞（自然;當然） certainly; of course; naturally; willin...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. He felt that her friendship for him was mixed with a sort of filial respect.

    他覺得她對自己的友誼還摻雜著一種晚輩的敬意。
  2. The discovery of the colossal magnetoresistance ( cmr ) in hole - doped perovskite manganites ra1 - xmxmno3 ( ra is a trivalent rare - earth ion and m is a metal ion ) has attracted much attention since 1989 due to not only its technological applications in magnetic recording and sensor, but also the effect of the strong correlation concerning metal - insulator transition in the field of basic research. since then, several physics models have been suggested to explain the mechanism of cmr. however, the exact mechanism of cmr remains to be done

    自1989年在摻雜鈣鈦礦型錳氧化物ra _ （ 1 - x ） m _ xmno _ 3 （其中m為金屬離子， ra為三價稀土離子）中發現龐磁電阻（ cmr ）以來由於其在磁記錄、磁傳感器等方面潛在的應用前景，以及金屬?絕緣體相變等所涉及的強關聯效應，使該類化合物吸引了物理學界的廣泛注意。
  3. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。
  4. Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect.

    預料其它對折射率的影響來自摻雜劑以及電光效應。
  5. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  6. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  7. The influence on the magnetism and the electron spin resonance ( esr ) over a wide range of composition and temperature have been studied systematically. an obvious symmetric esr signal with a lorentzian lineshape in the paramagnetic regime is observed

    本論文邊過選擇磁性離子替代，著眼點在於討論衫雜離子的磁性效應，實驗發現摻雜使樣品的磁結構發生變化，且在低溫時出現磁化強度峰，用摻雜離子自旋旋轉對此進行了解釋。
  8. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  9. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  10. The x - ray diffraction, scanning electronic microscope and the squid were used to characterize the properties of the mgb2 core in mgb2 / fe tapes and wires. the effect of the proportion of mg, b and sic as well as the sintering parameters on the phase formation, microstructure and the critical current densities of mgb2 / fe tapes and wires was discussed in details. the results showed that the high purity of mgb2 core could be synthesized by both the traditional vacuum sintering and the sparking plasma sintering and the vacuum sintering environment restrained the oxidation of mg effectively

    相對于傳統真空燒結， sps燒結方式成相速度快、樣品晶粒細小均勻、 mgb2超導芯緻密性好、晶間連接優良，因而sps燒結樣品的臨界電流密度明顯高於傳統真空燒結樣品，其中未摻雜的帶材樣品經過sps800 ， 15分鐘燒結后，自場下的臨界電流密度jc值在10k時達到8 . 64 105a / cm2 ，而且隨著測量溫度和外加磁場的增加， sps燒結樣品的臨界電流密度下降率比傳統真空燒結樣品緩慢，在20k ，自場時為5 . 97 105a / cm2 ， 20k ， 3t時，臨界電流密度值仍大於104a / cm2 。
  11. In order to implement photo - catalysis in common condition, the band gap must be decrease. doping is a good measure

    為了實現自然條件下的光催化，需要降低tio _ 2禁帶寬度，摻雜則是一種較好的措施。
  12. The highest jc of 8. 64 105a / cm2 at 10k, 0t was obtained in the un - doped mgb2 / fe tape sintered at 800 for 15 minutes by sps. it is worthwhile to note that the jc value was decreased much slowly in this sample with the increase of the testing temperature and magnetic field. for example, the jc was 5. 97 105a / cm2 at 20k, 0t, and at 20k, 3t the jc value was

    從目前試驗結果看，摻雜量為5mol %時線材性能較好，樣品的臨界電流密度在自場下達到6 105a / cm2 ，並且sic摻雜改進了樣品在高場下的jc值，在4t時，摻雜線材樣品的臨界電流密度大大超過未摻雜樣品，這是由於sic的摻入生成了細小均勻的mg2si ，分佈在晶粒
  13. As the key part of the thermoelectric generation equipment, thermoelectric material becomes the important research object. in my work, ca3co4o9 semiconductor was synthesized and its thermoelectric properties was improved by different dopants

    作為熱電發電器的核心部分的熱電材料自然成為研究的重點，本論文工作以ca _ 3co _ 4o _ 9半導體為研究對象，通過不同元素摻雜宋改善它的熱電性能，已經取得了良好的效果。
  14. This paper with the actual needs of metal physical doping of icf target material and laser - x - ray conversion material is starting point, major for flow - levitation method principle, technology parameter control particle grain size, structure and thermal stability of phase composition that prep aration metal and alloy nanoparticle go deep into research. the principle of preparation metal nanoparticle by flow - levitation method is difference with other evaporate condensation method

    本文以icf靶材料金屬物理摻雜和激光- x光轉換材料的實際需要為出發點，主要對自懸浮定向流技術制備金屬與合金納米微粒的原理、過程和工藝參數控制微粒粒徑大小，所制備納米微粒的結構、物相組成以及組成相的熱穩定性等方面進行了深入研究。
  15. The fruit of this research has been successfully employed in zigong 764 manufactory. a series of doped molybdenum wire has been manufactured

    本研究成果已成功地用於自貢764廠的生產中，並形成了摻雜鉬絲的系列產品。
  16. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  17. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  18. When the applied bias voltage is changed within positive slope regions of u - i curve, the domain boundary between the high and low electric field domains does not moved, and the size of electric field domains regions is also not altered, while the electric field strengths are adjusted

    用模擬計算的方法研究了弱耦合摻雜gaaa / alas超晶格在時變電壓下的場疇機制和固定偏壓下電流自維持振蕩。在時變電壓下，一定摻雜的超晶格處于穩定的電場疇， u - i曲線呈現鋸齒狀波形。
  19. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。
  20. Meanwhile, the structural stability of delithiated cathode materials is also improved by ti doping. it results in the suppression of thermal decomposition reaction of delithiated cathode material, which will produce heat and oxygen gas as the fuse of electrolyte decomposition and combustion reaction. hence, thermal stability of delithiated cathode material is also enhanced by ti doping

    同時，欽的摻雜增強了電極材料在脫鏗狀態下的結構穩定性，抑制了電極材料自身熱分解反應的發生，阻止了氧氣和熱量的釋放，減少或延遲了電解液的分解或燃燒反應，從而提高了電極材料的熱穩定性。
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