自由電子能級 的英文怎麼說

中文拼音 [yóudiànzinéng]
自由電子能級 英文
free electron energy level
  • : Ⅰ代詞(自己) self; oneself; one s own Ⅱ副詞(自然;當然) certainly; of course; naturally; willin...
  • : causereason
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : 能名詞(姓氏) a surname
  • : Ⅰ名詞1 (等級) level; rank; grade 2 (年級) any of the yearly divisions of a school course; gra...
  • 自由 : freedomliberty
  • 電子 : [物理學] [電學] electron
  1. At this pressure it is found that the mean free path for electrons of a few volts energy is of the order of 1cm.

    在這個壓強下,我們發現量為幾伏特的的平均程的數量為1cm。
  2. In the two - photon resonance case, part of the input pulse energy is transformed into higher and lower frequency components through amplified spontaneous emission and four - wave mixing, and the medium shows strong optical power limiting effect

    在雙光共振情況下,即入射脈沖頻率等於1 、 3之間的共振頻率的一半,於介質中放大的發輻射和四波混頻的作用,部分入射脈沖量轉化為高頻和低頻場成分的量,分介質表現出了很強的光功率限幅特性。
  3. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上,採用迴旋共振等離體增強mocvd ( ecr - pamocvd )方法,在藍寶石襯底上通過s - k模式組裝生長gan aln量點結構的生長工藝、結果及討論。而重點分析了組裝生長量點之前的aln外延層生長工藝,包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長;通過高衍射、 x射線衍射和原力顯微鏡測試,並且對這些測試結果進行了詳細的比較研究,得出了較優化的工藝條件,生長出了晶質較好、表面較平整的aln外延層;進而採用s - k模式組裝生長了gan aln量點結構。於實驗裝置加熱爐溫度的限制,我們沒有夠生長出原平滑的aln外延層表面,因而沒夠生長出密度比較大和直徑比較小的量點。
  4. Visual basic for applications provides a powerful infrastructure for developing and deploying a wide variety of customized solutions that solve everyday business requirements, including advanced e - mail messaging, appointment and task management ; electronic discussions ; and tracking, routing, and document library solutions

    Visualbasicforapplications為開發和應用各種定義解決方案,解決如高郵件傳輸、約會和任務管理、討論、跟蹤、路選擇和文檔庫等日常商務需求,提供了功強大的體系結構。
  5. The verification process for a digital signal processor with very long instruction word ( vliw ) named thuasdsp2004, which is developed by tsinghua university microelectronic institute sponsored by national natural science foundation, is analyzed at the register - transfer level in this paper

    本文介紹在國家然科學基金的資助下,清華大學微研究所設計的具有超長指令字( verylonginstructionword , vliw )體系結構特點的數字信號處理器thuasdsp2004的rtl驗證工作。
  6. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    超晶格中之間的順序多阱共振隧穿引起的場疇及維持振蕩現象是其中的一個非常有意義的分支,該現象可用來製作壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下維持振蕩產生的條件進行了深入的探討,並結合宏觀模型和微觀模型對超晶格在時變壓作用下的壓-流特性以及固定偏壓作用下的流特性進行了模擬計算。
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