薄層電阻 的英文怎麼說

中文拼音 [bócéngdiànzǔ]
薄層電阻 英文
sheet resistance
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 薄層 : sheet; thin layer; seam; thin wall; leaf; flash; lamelli; lemell-; lamin-
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. Test method for sheet resistance of gold plating layer

    金電鍍層薄層電阻測試方法
  2. Incondition of surface anti - corrision and insulation coat of metal and tiny hole of steel where resistance and crack is very small, when supplying a high voltage, gas crack will be punctured and electric spark discharging will occur, now send a pulse signal to the alarming circuit the alarmer can send out sound and light to alarm. we can do leak hunting on the coating according to this principle

    金屬表面絕緣防腐層過薄、漏鐵及漏電微孔處的電阻值和氣隙密度都很小，當有高壓經過時就形成氣隙擊穿而產生火花放電，給報警電路產生一個脈沖信號，報警器發出聲光報警，根據這一原理達到防腐層檢漏目的。
  3. The chemical compositions of sei films formed on the interfaces of a3000 samples in different electrolytes during the first charging process are mainly li2co3 and lioco2r, but their textures are different. the sei films formed in ec - based electrolytes are thin and compact, which can prevent the solvated lithium ions from cointercalating between two graphene layers of the graphite crystallites effectively, therefore samples a3000 have small irreversible capacities and good compatibilities with this kinds of electrolytes. however, the sei films formed in pc - based electrolytes are thick but defective, which could not effectively prevent solvated lithium ions from intercalation, therefore sample a3000 shows large irreversible capacities in pc - based electrolytes and bad compatibilities with this kind of electrolytes

    A _ （ 3000 ）試樣在六種不同的電解液中，首次充電過程中所形成的sei膜，其化學組分均為碳酸鋰和烷基碳酸鋰，但在ec基電解液中形成的sei膜薄而緻密，可以有效地阻止溶劑化鋰離子插入石墨層間，不可逆容量少，表現出與a _ （ 3000 ）試樣有良好的相容性；在pc基電解液中形成的sei膜厚，且有缺陷，不能有效地阻止溶劑化鋰離子嵌入試樣中石墨微晶的層間，不可逆容量大，與a _ （ 3000 ）試樣的相容性極差。
  4. In this paper, the circuit used for testing sheet resistance is designed using single chip processor. additionally, we have expressed van der pauw function as a polynomial form through local and global reversal development by using the normalized polynomial match, being convenient not only for programming, but also for sheet resistance testing when using van der pauw and rymaszewski methods

    本文還利用單片機系統設計了薄層電阻測試電路，對于程序中用到的范德堡隱函數，利用非線性反演和規范化擬合的方法推導出其多項式顯函數形式。這不僅給對我們編寫程序提供了方便，也為使用范德堡法和rymaszewski法測量薄層電阻提供了便利。
  5. The experiments show that the main origins of causing the oil and water zones complicated in the study area on the one hand is pore structure, fine particle size and shale content high, resulting in saturation of irreducible water of the reservoirs varying greatly, on the other hand is mud invasion influence, resulting in the reservoir receptivity decreasing, and the third is the thin bed is restricted by logging resolution, resulting in measure value influenced by the bed thickness

    研究得出，研究區復雜油水層主要成因一是儲層孔隙結構復雜，巖性細，泥質含量高，導致儲層束縛水飽和度變化大；二是泥漿侵入影響，導致油層電阻率降低；三是薄層受測井分辨能力的限制，其測量值受層厚影響。
  6. ( 3 ) according to the study of heat treatment process, heat treatment ambience, airflow and heat treatment temperature were considerd as the important influences on the quality and property of ybco films. through optimizing the process, the ybco films were prepared on sto single crystal, and their room temperature resistance was about 200 ybco films also were fabricated on the sto buffered si substrate, and their room temperature resistance was about 300d

    （ 3 ）根據本文熱處理過程的工藝探索，認為熱處理氣氛、氣流量及處理溫度是影響薄膜質量及性能的重要因素，通過優化工藝過程，在鈦酸鍶（ sto ）單晶上制得的ybco薄膜表面質量良好，室溫電阻200左右；而在預制了鈦酸鍶（ sto ）緩沖層的si基板上制備的ybco薄膜的室溫電阻為300左右。
  7. Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large

    但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。
  8. Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy - current gage

    半導體矽片電阻率及硅薄膜薄層電阻測定非接觸渦流法
  9. The gmr effect has became a international researching hotspot after the discovery of gmr effect of fe / cr multilayers. people found that multilayers formed by ferromagnetic metal of transition family and nonmagnetic metal or by alloy film and nonmagnetic metal will take on gmr effect. the value of gmr of co / cu multilayers is the biggest which can reach 65 % under room temperature

    繼fe / cr多層膜巨磁電阻效應發現以後，巨磁電阻效應已成為國際研究的熱點，人們發現過渡族鐵磁金屬或合金薄膜與非磁性金屬構成多層膜后均可呈現巨磁電阻效應，其中以co / cu多層膜的gmr值最高，室溫巨磁電阻效應可達65 % 。
  10. As one of magnetism properties in the magnetism materials, magnetoresistance ( mr ) effect shows the magnitude about resistivity dependence of the magnetic field. the time when people focus on magnetoresistance effect is the last ten years. after mr effect was discovered from the multilayered films fe / co by baibich et al in 1988, helmolt et al got the same result from la _ ( 2 3 ) ba _ ( 1 3 ) mno _ x films

    人們對磁電阻效應的研究主要在於最近的十年間，繼1988年baibich等人在磁性多層膜fe co中發現了磁電阻效應后， 1993年helmolt等人在la _ （ 2 3 ） ba _ （ 1 3 ） mno _ x等鑭錳氧化物薄膜材料中也發現了磁電阻效應。
  11. At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity

    這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
  12. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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