薄膜微電子 的英文怎麼說

中文拼音 [bómówéidiànzi]
薄膜微電子 英文
thin-film microelectronics
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 薄膜 : thin film; film; diaphragm
  1. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  2. Compared with bst materials, especially in thin films, ps t has smaller ferroelectric critical size, lower crystallization temperature, and compatible fabrication with si micro - electronics, so it can meet the need of the high quality si - based integrate circuit ( ic ). moreover, it is important to promote the development of the miniaturization and integration for the modern devices

    與bst相比，特別作為薄膜材料， pst的鐵電臨界尺寸較小，晶化溫度較低，制備工藝與si微電子工藝兼容，更能夠滿足高性能的si基集成電路的需要，對推動現代器件發展的小型化和集成化具有十分重要的意義。
  3. Abstract : recent studies on ferroelectric thin films, multilayered films and heterostructures are reviewed. the advantages and disadvantages of different processing methods for ferroelectric thin films are discussed. applications of the films, especially in ferroelectric memories, microelectromechanical systems and pyroelectric infrared detectors are described. some key problems are outlined

    文摘:綜述了鐵電薄膜、多層膜和異質結構研究的新進展，分析了鐵電薄膜不同制備方法的優缺點.重點介紹了鐵電薄膜在鐵電存儲器、微電子機械繫統及熱釋電紅外探測器方面的應用.指出了目前鐵電薄膜及器件設計研究需要重點解決的一些問題
  4. Dielectric thin film was an important kind of electronic thin films, which has wide applications in microelectronic and photo - electronic technology

    介電膜，是一種重要的電子薄膜。在微電子技術和光電子技術中有著廣泛的應用。
  5. In postnatal 12 and ismonths testes, the number of postive cells persistently increased. in 24 months testes, some spermatocytes also displayed strong enos immunoreactivity. from 3 weeks to 3 months, the permeability of microvascular was on the trend of increase while it was on the trend of decrease from 12 months to 24 months. s. biood - testis barrier : the basal lamina of endothelium cells developed from thin, broken and unequal electronic density to thick, full and high electronic density with aging

    （巧1 ; 1 {性農i返_微1111扮通透性從3周齡至3月齡』 l 』增人趨勢， 12月齡到24月齡纖微l陽粉通透性: ，減小趨侖5 .血梁屏障:隨著增齡，毛細血憐內皮細胞的基膜由薄、斷續、電子密度不均逐漸發展為基脫垮、完招、 .毯子密度較高而均勻，厚度逐漸增加。
  6. In recent years, lead zirconium ti tanate pb ( zrxtii - ? on, ( pzt ( x / l -. x ) ) ferroelectric thin films have been extensively applied to many high - tech fields because of their excellent ferroelectric properties such as high dielectric constant, low dissipation factor, nonvolatility and so on

    鋯鈦酸鉛（ pzt ）薄膜具有優良的介電、鐵電、壓電和光電特性，且抗輻射性強，不揮發，已廣泛地應用於微電子，集成光學和微機械繫統（ mems ）等高技術領域。
  7. Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ). in the relatively low oxygen pressure, lno film displays spotty rheed pattern

    首先，通過原位高能電子衍射（ rheed ）及x光電子能譜（ xps ）研究了氧分壓對lno導電薄膜微結構的影響，並進一步提出了氧分壓對lno薄膜微結構的影響的機理。
  8. The basic theory of the integrated optics is waveguid optics, the technical basic is thin film technology and microelectronics. with the development of the second and third generations fiber optics gyroscopes, it promotes greatly the development and application of the multifunction integrated optical circuit device ( mioc )

    集成光學研究的是平面光學器件和平面光學系統的理論、技術與應用，其理論基礎是導波光學，技術基礎是薄膜技術和微電子技術。隨著第二和第三代光纖陀螺的發展，大大地促進了多功能集成光路器件的發展和應用。
  9. This thesis presents the theoretical analysis about the design of the tunable antennas with multilayered structure theory and microstrip antenna ' s analytical methods. and it improves three typical kinds of antennas, and uses the voltage controlled ferroelectric materials. we analyze the tuning features of the antenna by simulation under the condition of different permittivity of the ferroelectric materials, and discuss the feasibility of improvement from microstrip antenna to tunable antenna

    本文結合多層介質理論及微帶天線的分析方法對可調諧天線進行理論分析，並對矩形貼片天線、圓形貼片天線、微帶振子天線三種典型的微帶天線結構進行改進，引入壓控鐵電薄膜材料，模擬分析在改變鐵電薄膜介電常數條件下天線的調諧特性，討論微帶天線改進為可調諧天線的可行性。
  10. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  11. Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet

    本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。
  12. Therefore, one needs its thin films, having the same properties as the bulk ferroelectric ceramics with the rapid development of the microelectronics and circuit integration in the new century

    隨著微電子技術與集成電路技術的迅猛發展，人們需要將具有大塊鐵電材料的性能的薄膜材料利用現代復合技術將不同功能的微尺度材料復合到一塊集成板上，構成具有各種優異性能的復合材料體系。
  13. As a class of material with special appearance, thin film has particular optical, mechanical, electroniccal and magnetical properties, and was used as the basic material in many new application fields, such as microelectronics, optoelectronics, magnetoelectrics, overhardening of cutting tools, sensors and the application of solar energy, etc. as a prospective dielectric material, tio _ ( 2 ) thin film was used in thin film technique, which brings a great interest to the researchers of all over the world

    作為特殊形態材料的薄膜，具有特殊的光、機、電、磁等性能，已經成為微電子學、光電子學、磁電子學、刀具超硬化、傳感器和太陽能利用等新型應用領域的材料基礎。 tio _ 2作為一種極具前景的介質材料被應用到薄膜技術中來，引起了國內外研究者的極大興趣。
  14. As a functional material, tini shape memory alloy thin film has the characteristics of large stress, strain and high work density. it is a perfect micro - actuator candidate for the micro - electrical mechanical system ( mems )

    Tini形狀記憶合金薄膜被認為是目前微機械領域中較有發展前景的一種大應力、應變和高單位功密度的微驅動器材料，對它的研究和開發必將推動微電子機械繫統的發展，為人類探索和操作微觀世界提供一種有效的工具。
  15. Pulsed, filtered cathode arc plasma deposition ( pfcapd ) is a new deposition technology for a range of metals and compounds films free of the microdroplets associated with conventional arc evaporation, and it seems as one of the best methods to deposition hydrogen - free diamond like carbon which has widespread applications for its unique properties

    脈沖磁過濾陰極弧等離子體沉積由於能很好地過濾液滴，沉積幾乎所有金屬及其合金薄膜材料，尤其能沉積極有應用前景的類金剛石膜及用於微電子工業的銅內連材料，日益受到重視。
  16. Due to their versatile function, oxide thin films can be widely applied in the fields of microelectronics, optoelectronics and microelectronic mechanism systems. thus the fabrication technology and growth control approach have been extensively investigated

    氧化物薄膜由於其豐富的物理性質可廣泛地被應用於微電子學、光電子學和微電子機械繫統等領域，對其制備工藝和生長控制的研究愈加受到重視。
  17. With the development of microelectronic technology and high degree integration, people need ferroelectric films with more excellent properties. therefore, the preparation and the properties study on the ferroelectric film have become research subjects that have highly been paid attention to in the world

    隨著微電子技術和器件高度集成化的發展，人們對薄膜材料性能的要求越來越高，因此鐵電薄膜材料的制備和性能研究成為目前國際上高度關注的研究課題。
  18. At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively

    結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。
  19. Inorganic oxide films are widely used in modern microelectronics, solid - state electronics, optical engineering

    無機氧化物薄膜在現代微電子學、固體電子學和光學工程中有廣泛的應用。
  20. Thin - film microelectronice

    薄膜微電子電路
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