薄膜掃描 的英文怎麼說

中文拼音 [bómósǎomiáo]
薄膜掃描 英文
film scanning
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 掃 : 掃構詞成分。
  • 描 : 動詞1. （照底樣畫） copy; depict; trace 2. （在原來顏色淡或需改正之處重復塗抹） retouch; touch up
  • 薄膜 : thin film; film; diaphragm
  1. The chemical composition and microstructures of the insulating thin films prepared by different methods were analyzed by x - ray diffraction ( xrd ) and scanning electron micrograph ( sem ) ; other properties such as electric resistance, the breakdown field strength and dielectric properties were evaluated using high resistance meter, voltage resistance meter and precision impedance analyzer respectively

    採用x射線衍射儀（ xrd ）對表面絕緣薄膜的物相組成進行了分析，掃描電子顯微鏡（ sem ）對表面絕緣薄膜的微觀結構進行了研究，並用絕緣電阻測試儀、耐壓測試儀和精密阻抗分析儀分別對絕緣膜進行絕緣電阻率、擊穿場強和介電性能的測試。
  2. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  3. This paper summarized several main research methods on this topic in our country, including " the determinant of laser - induced - damage of thin film by the scan of transmission and reflectance method ", " study of the phenomena on laser - induced thin film damage by photo - acoustic method " and " the measurement of damage threshold on optical thin film by diffusion method ", etc

    本文總結了目前國內幾種主要的研究方法，包括用透射反射掃描法檢測光學薄膜的激光損傷，用光聲法測定光學薄膜的破壞閾值，以及用散射法來測量光學薄膜的損傷閾值等。
  4. On the basis of thinning the auto - body film engineering drawings, a self adaptive precision vectorization algorithm for circles on the auto - body engineering drawings was presented

    摘要在車身薄膜圖掃描圖像細化的基礎上，提出一種自適應精確向量化圖的演算法。
  5. The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed

    採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段，研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。
  6. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  7. To achieve accurate detection of surface potential, the measurement of the contact potential difference of the zno / si step was also carried out. polarization - related surface properties of ferroelectric thin films were investigated by kelvin probe force microscopy ( kpfm ), leading to the discovery of asymmetric charge writing on the surface of pb ( zr _ ( 0. 55 ) ti _ ( 0. 45 ) ) o _ 3 ( pzt ) thin film

    為了優化儀器的檢測靈敏度和穩定性，選用氧化鋅薄膜上的zno / si臺階作為測試對象，檢測了zno / si的接觸電勢差;通過改變儀器系統參數，發現針尖-樣品距離和掃描速度對接觸電勢差的檢測結果影響顯著。
  8. The techniques of preparing film buffer layers on si were studied. the sem, tem and xrd were adopted to study the crystal structure of films. the influences of buffer layers, substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed

    進一步用掃描電鏡、透射電鏡和x射線衍射儀研究了薄膜組織結構和結晶情況，分析了緩沖層和襯底對ybco薄膜制備的影響、以及不同熱處理條件對薄膜結晶結構及性能的影響。
  9. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  10. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  11. Various factors affecting the refractive index and the deposition rate of the deposited films are studied to optimize growth conditions of the films. the microstructures and optical properties of the films are characterized by a prism coupler, a fourier transform infrared spectroscopy ( ftir ) and an atom force microscopy ( afm )

    研究了薄膜折射率和淀積速率與工藝參數之間的關系，通過棱鏡耦合儀、傅立葉變換紅外光譜、原子力顯微鏡、掃描電子顯微鏡等測試手段，分析了薄膜的結構和光學特性。
  12. According to this, the research of the fatigue properties of the ferroelectric films was proposed. the lead zirconate titanate ( pzt ) film was prepared by a metal - organic decomposition method. the films " physical properties were analysed by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ) and hysteresis loops

    然後採用金屬有機物熱分解法制備出作為研究對象的鋯鈦酸鉛pb （ zr ， ti ） o _ 3 （ pzt ）薄膜，用x射線衍射儀、掃描電鏡和rt6000s鐵電測試儀測量表徵鐵電薄膜。
  13. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  14. With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin

    以優化的緩沖層生長條件得到質量有明顯改善的gan外延層， gan薄膜的（ 0002 ）面雙晶dc - xrd掃描的半高寬為6arcmin 。
  15. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  16. With sem, x - ray diffraction analysis, magnetic measurement by magnetic property measurement system, the effects of growth and annealing conditions are analyzed

    超導薄膜，採用磁測量m - t x射線衍射掃描電子顯微鏡技術分析了各種沉積及退火條件對mgb
  17. Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor

    採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。
  18. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  19. It was found that large scale single crystal ttf m - nbp film can be obtained by this method. atomic resolution surface images were observed both with atomic force microscope and scanning tunneling microscope. high density data storage was realized by applying voltage pulses between the stm tip and the substrate

    用原子力顯微鏡afm和掃描隧道顯微鏡stm都觀察到了ttf m - nbp薄膜表面的原子級分辨像。通過stm針尖施加脈沖電壓在ttf m - nbp薄膜上實現了納米級的信息存儲，最小記錄點直徑約為1 . 2nm 。
  20. The morphology and structure of ti - dlc films were investigated by high resolution electron microscopy ( hrem ), atomic force microscopy ( afm ), scanning electron microscopy ( sem ) and raman spectroscopy. the mechanical properties were investigated by a mts nano indenter xp system with a berkovich indenter. the ti - dlc film with a titanium content of 27at. %

    利用高分辨電子顯微鏡（ hrem ） 、原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）和拉曼光譜儀等手段分析了沉積ti - dlc薄膜的成分、形貌和結構，使用帶berkovich壓頭的納米壓痕儀（ mtsnanoindenterxp ）測試了薄膜的力學性能。
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