薄膜模擬 的英文怎麼說

中文拼音 [bómómónǐ]
薄膜模擬 英文
membrane analogy
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 擬 : 動詞1. （設計; 起草） draw up; draft 2. （打算; 想要） intend; plan 3. （模仿） imitate
  • 薄膜 : thin film; film; diaphragm
  • 模擬 : imitate; simulate; analog; analogy; imitation; simulation模擬艙 boilerplate; 模擬電路 [電學] circ...
  1. The simulation of absorptance and response characteristics for pyroelectric thin films infrared sensors

    薄膜熱釋電紅外探測器吸收和響應性能的模擬研究
  2. Simulation of fluid flow of an agitated thin - film evaporator

    薄膜蒸發器內流體流動模擬
  3. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  4. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  5. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  6. A monte - carlo method has been developed for simulating the growth of epitaxy flims. the program was compiled using turbo basic language. the influence of growth rate and temperature on surface morphology was studied. the model we used was an advanced diffusion limited aggregation ( dla ) model. the process of deposition and diffusion were considered in this model

    本文利用montecarlo方法，結合薄膜生長理論，採用turbobasic語言編寫程序，對外延薄膜的生長過程進行了模擬。所用的模型為改進的擴散有限聚集模型（ dla ） ，研究了薄膜生長過程中沉積速率和襯底溫度對表面形貌的影響。
  7. In the theoretical description of grazing emission fluorescence, the mode of fluorescence intensity emitted from layered materials dependence of grazing angle is established by applying asymptotic approximations to double fourier integrals, and the theoretic calculation formula of fluorescence intensity from a thin layer is derived. by the derived expressions, the theoretic simulation curves of several thin layers on si substrate are calculated. in the experimental setup, the requirement of construction of the setup and some important parameters are brought forward

    最後，利用平穩位相方法建立了掠出射情況下薄層樣品產生的熒光強度和掠出射角的對應關系數學模型，推導了薄層樣品熒光強度理論計算公式，並以此為依據模擬計算得出了cr 、 fe 、 ti和ni等幾種以si作基底的單層薄膜樣品的熒光強度隨掠出射角變化的理論曲線。
  8. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  9. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  10. Simulation study on thermal effect on metal films irradiated by ultra - short pulse laser

    超短脈沖激光輻照金屬薄膜溫升效應的模擬研究
  11. Simulation of the initial growth of metal thin films at high temperature

    高溫下金屬薄膜生長初期的模擬研究
  12. Molecular dynamics simulation of ultrashort laser induced back - surface spallation in metallic film

    超短激光誘導金屬薄膜后層裂的分子動力學模擬
  13. Furthermore, on the basis of adopting pzt ( lead zirconium titanate ) as the switched - capacitor dielectric, the output current of a single circuit unit is eight times as large as that of the former single circuit unit with identical technology process parameters

    針對採用鋯鈦酸鉛鐵電薄膜（ pzt ）作為開關電容介質的設想，在工藝參數不變的情況下，計算機模擬結果表明，其單個單元電路輸出電流可提高7倍。
  14. Finite difference time - domain method is used to calculate the reflection for these probes and absorbing boundary condition is used to deal with the singularity in the axis of the coaxial - line in the simulation. by comparing the reflection of different probes, the best probe has been selected according to sensitive requirement. the influence of parameters : such as thickness of protective film, length of protruding inner conductor of the coaxial - line probe to the measurement has been studied

    通過時域有限差分法進行數值模擬分析，並採用吸收邊界處理同軸線軸心奇異點，計算出各種探頭測量相同溶液的反射系數，根據其測量的靈敏度，選出最優設計；並通過分析所選探頭的各種設計參數，如薄膜厚度、內導體伸出長度等的變化對測量結果的影響，找出該探頭各參數的最佳范圍，使其具有高度靈敏性，以適用於測量化學反應溶液的介電常數。
  15. Biology, etc. owing to many merits has not yet been used to measure parameters of gratings. the paper researches on the subject in view of current lack of it. the main tasks of the paper include : analyzing ellipsometric characteristics of gratings in detail with vector diffraction theory and ellipsometrics ; devising a reflective quarter wave plate at normal incidence according to some ellipsometric characteristics ; making use of normal simplex algorithm during ellipsometric inversion of gratings parameters, inversing ellipsometric parameters with gaussian noise of different standard deviations to simulate actually measured values with examples of isotropic metallic and anisotropic step gratings and testing that ellipsometry about gratings parameters is feasible with the range of certain precision ; discussing choice of incidence angle at length

    本論文的主要工作包括：結合光柵的矢量衍射理論和薄膜的橢偏理論，詳細分析了光柵的橢偏特性；並且根據一些橢偏特性設計出一款正入射反射型單波長1 4波片；在光柵參數的橢偏反演中，引入正單純形法作為反演演算法，分別以各向同性的正弦形金屬光柵和各向異性的階梯型光柵為例，在標準橢偏值的基礎上加入不同偏差的高斯噪聲來模擬實際的橢偏測量值進行反演，在一定精度范圍內得出滿意的光柵參數，說明光柵參數的橢偏測量是可行的；還就入射角的選取問題進行了一定的探討。
  16. In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed

    本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。
  17. It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature

    （ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。
  18. First this paper introduces the development of microscale heat transfer from theory, experiment and computer simulation. then it analyses the heat transfer mechanism during short - pulse heating of metals and the microscale heat conduction in dielectric thin films. last it expatiates on the principle of ac calorimetric method and its experimental techniques

    本論文首先從微尺度理論、實驗技術和計算機模擬三方面介紹了微尺度傳熱學研究現狀，接著分析了超短激光脈沖加熱金屬薄膜過程中的熱傳導和介質薄膜中的熱傳導機制，闡述了超短激光脈沖交流量熱法的原理和實驗技術。
  19. Simulation of fractal growth of ultra - thin films via electro - deposition

    電沉積超薄膜生長的模擬研究
  20. Quasicontinuum simulation of nanoindention of nickel film

    鎳單晶薄膜納米壓痕的準連續介質模擬
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