薄膜生長速率 的英文怎麼說

中文拼音 [bómóshēngzhǎngsùlǜ]
薄膜生長速率 英文
film growth rate
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 薄膜 : thin film; film; diaphragm
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 速率 : speed; rate; tempo
  1. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  2. A monte - carlo method has been developed for simulating the growth of epitaxy flims. the program was compiled using turbo basic language. the influence of growth rate and temperature on surface morphology was studied. the model we used was an advanced diffusion limited aggregation ( dla ) model. the process of deposition and diffusion were considered in this model

    本文利用montecarlo方法，結合薄膜生長理論，採用turbobasic語言編寫程序，對外延薄膜的生長過程進行了模擬。所用的模型為改進的擴散有限聚集模型（ dla ） ，研究了薄膜生長過程中沉積速率和襯底溫度對表面形貌的影響。
  3. Growth rates of between 0. 25 and 1. 3μm/min were reported with the c axis of hexagonal zno grown on(0112)-oriented al2o3 lying in the plane of the film。

    據報道，在（0112）取向的Al2O3襯底上生長C軸位於薄膜平面上的六角晶體ZnO的情形中，其生長速率在025mmin和13mmin之間。
  4. B ) the deposition time may influence the films orientation and growth rate

    B ）沉積時間會影響薄膜的取向和生長速率。
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  6. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  7. Through simulation, the morphology of the films grown under different rates and substrate temperature was obtained, and the growth mode under different condition was analyzed

    通過模擬，獲得了不同沉積速率及不同襯底溫度的薄膜形貌，並且分析了不同條件下薄膜的生長模式。
  8. It is found that the diamond film grown on the si substrate with predeposited diamond crystal seed not only can get higher growth rate, but also can improve the emission properties of diamond film

    發現金剛石籽晶預沉積方法既可以有效地提高金剛石薄膜的生長速率，同時籽晶預沉積又可以在一定程度上改善金剛石薄膜的場發射性能。
  9. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  10. The results indicated that dmzn flow rate predominately controlled the growth rate of znse epilayer in this work

    研究發現實驗中znse薄膜生長速率主要受dmzn流量控制。
  11. We combined the cvd technique with the pecvd technique by adding a dc or rf electric field to the reacting region of cvd device, and improved the inputting method of reaction gases, then had executed a diamond film growth system. the advantages of our system are : ( 1 ) reaction power, which can enhance the density of the plasma in the reacting region, is supplied with the heat filament and the dc electric field, or with the heat filament and the rf electric field both of them can be controlled precisely and they are complementary to each other

    將熱絲cvd技術與pecvd技術相結合，在薄膜的成核和生長階段分別給反應區再施加一個直流和射頻電場，同時改進反應氣體的進氣方式，製成具有下列兩大特點的金剛石薄膜生長系統： （ 1 ）反應功率由熱絲和直流電場或熱絲和射頻電場共同提供，兩者互相補充，可精確控制，大大提高了反應區的等離子體密度； （ 2 ）能精確控制反應氣體的分佈、流量及流速。
  12. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  13. Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area

    同時，此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度，這表明此時薄膜中的光生電子和空穴的復合速率最低，因而更有利於物質的光催化降解。當熱處理溫度高於700時，武漢理工大學碩士學位論文薄膜的光催化活性下降，這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。
  14. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ （ 1 - x ）多晶薄膜的生長機理，分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響，提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ （ 1 - x ）多晶薄膜生長的機理。
  15. With weak surface interaction of substrate, low deposition velocity and high substrate temperature can make pure c60 films generate more orderly. 3

    相對較弱的表面作用，低沉積速率和高襯底溫度可使純c _ （ 60 ）薄膜生長更加有序； 4
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