藍退火 的英文怎麼說
中文拼音 [latuìhuǒ]
藍退火
英文
blue annealing-
But star tenor roberto alagna ' s dramatic walkout during a performance at milan ' s la scala opera house in response to boos in the crowd may be a tantrum too far, critics warn
不過,批評家警告說,明星男高音羅貝托阿藍尼亞在米蘭史卡拉歌劇院的一場演出中,以引人注目的罷演退場回應觀眾席的噓聲,恐怕是生氣得太過火了。The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響,得到了樣品的最佳制備條件:襯底溫度450 、藍寶石襯底,此條件下制備的樣品具有高度( 002 )取向性, ( 002 )衍射峰半高寬僅僅0 . 3491 ,原子力顯微鏡( afm )分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。The company deals with the heat treatment processing of various specification, type and kind of ferrous nonferrous metal, including anneal, quenching, hardening tempering, carburizing, solid solution, aging, vacuum heat treatment, high frequency treatment, blueing, nitriding and ion nitriding etc, the annual capacity of which is more than 18, 000t
我公司可以承攬各種規格型號品種的黑色金屬有色金屬熱處理加工業務,包括:退火正火回火淬火調質滲碳固溶時效真空熱處理高頻處理發藍氮化離子氮化等。年加工能力22000餘噸,年加工產量出口佔70 % 。The photoluminescence of the thin films without post heating is weak. only one luminescence band is found nearby 473nm. two luminescence bands are found after post heating, nearby 493nm and 368nm respectively. the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase
而退火處理過后,薄膜出現兩種光致發光現象,即藍色發光和紫外發光,其峰值分別在493nm和368nm附近,而且隨著退火溫度的升高和退火時間的延長,發光譜帶的強度逐漸增大,峰形的位置也有不明顯的藍移。Blue boy group, withdraw at once. i repeat, cease firing and back off
藍色軍團小隊,立刻撤退重復,停止開火,撤退Carbon plasma immersion ion implantation ( piii ) into the porous silicon has been studied for the first time, and obtained intense blue light. the effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000c
首次研究了碳等離子體注入對多孔硅的改性,得到了強藍光發射,詳細研究了退火溫度對發光強度的影響,發現在400時達到最大值,並探討了相關的機理。The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes, then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0. 5 l / min ) at the temperature 400 for 30 s
N型( 80 - 100 ? cm )矽片刻蝕后的多孔硅在胺液中浸泡20min ,然後在氧化爐中進行熱退火,退火溫度在400時, o _ 2流量為0 . 5l / min的條件下退火30秒,在紫外燈照射下,所得ps發藍白光。At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength
發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構,從而影響樣品的發光特性,而退火處理對這些損傷有一定的修復作用,這可以從發光峰強度的變化及波長的藍移來判定。The main work includes four contents as follow : 1 ) the electrodes annealed in various temperatures were studied. with x - ray diffraction spectroscopy ( xrd ) and sims, the interfacial reaction is analyzed and a new two - step annealing method is suggested
研究了al單層電極及ti al雙層電極與藍寶石基gan在不同退火條件下的歐姆接觸情況,並用x射線衍射譜( xrd ) ,二次離子質譜( sims )對界面固相反應進行了分析。分享友人