表面遷移 的英文怎麼說

中文拼音 [biǎomiànqiānyí]
表面遷移 英文
surface migration
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  2. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  3. The spectrum indicates that a polyethylene-like species has migrated to the surface of the elastomer.

    該光譜表明，聚乙稀類物已經遷移到人造橡膠的表面。
  4. This phenomenon was closely related to the transportation and extraction rate of carbon atoms in the surface of catalysts at different temperatures

    這種現象與不同溫度下碳原子在催化劑表面的遷移和析出速率密切相關，也即與不同溫度下催化劑的活性有關。
  5. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  6. The results showed that inclpc nanoparticles were ball - shaped with a size of 25 - 50 run, that their diffraction peaks become broader, and that the blue - shift in uv / vis absorption was also observed. the photoconductivity of inclpc nanoparticles in single - layered p

    本章的研究旨在對有機電子傳輸材料進行初步的探索，為今後新型的高遷移率有機電子傳輸材料的合成和表徵，以及應用等方面積累經驗。
  7. Through a series of experiments, the aging - resistance ability of hpch is increased one grade compared with the traditional materials, and the equal level with the foreign materials. the results of dry - wet circle test and quick test for chloride permeability show that the ability of efflorescence resistance of hpch is better. on the condition of 25 times circulation of dry - wet, there are a few non - development white spots just on the corner of specimens

    通過干濕循環測試及快速氯離子滲透試驗， hpch材料的抗析霜能力較強，在25次干濕循環條件下，僅在角部出現少量且不擴散的白斑，而傳統裝飾混凝土材料則出現延邊棱迅速擴散的大面積析霜；快速氯離子滲透結果表明，在同樣條件下hpch材料通過的電量（即離子遷移能力）僅為傳統材料的49 . 68 ，比國外同期產品提高25 . 34 。
  8. We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect

    在考慮了各種散射效應對遷移率的影響后，提出了短溝道most表面載流子遷移率的溫度模型。
  9. In this paper, according to the fully time compulsory education curriculum standards of chemistry ( experiment draft ) which requests that the students should be able to pose some valuable questions from their daily life or from their chemistry learning and express their questions clearly, the author discussed the inquiry value of the questions in chemistry instruction based on the theory of scientific epistemology, cognitive psychology and ability psychology. furthermore the parameters for measuring the students " questioning ability are also talked about from the perspectives of the motivations of questioning, the cognitive foundation, the value of the questions, the ability of posing questions by themselves and the ability of expressing their questions. after reading many literatures and interviewing some experienced chemistry teachers, the author proposed instructions strategies in cultivating the students " questioning ability in chemistry instruction from five aspects, they are : to stimulate the students to question ; to construct the cognitive foundation of questioning ; to augment the value of the questions ; to make the students pose their questions by themselves ; to cultivate the students " ability of expressing their questions

    本文在研究的過程中，採用了文獻閱讀和向任課教師訪談的方法，以《標準》中對「提出問題」要素的要求「能從日常現象或化學學習中，經過啟發或獨立地發現一些有探究價值的問題；能比較清楚地表述所發現的問題」為主線，運用科學認識論、認知心理學及能力心理學的相關理論作為理論基礎，結合中學生化學學習的特點，從問題的遷移價值、思維價值、能力培養價值和情感價值四方面深入探討了化學教學中問題的「探究價值」 ；通過對化學教學中學生「提出問題」能力的涵義及結構的分析，從提問動機、提問的認知基礎、所提問題的價值、提問的自主性和表達問題的能力五個方面建立了衡量學生「提出問題」能力的指標體系；在此基礎上相應從五方面提出了化學教學中學生「提出問題」能力培養的教學策略，分別是激發學生「提問」動機的策略、建構「提問」認知基礎的策略、提高問題價值的策略、提高學生「提問」自主性策略和培養學生「表達問題」能力的策略。
  10. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  11. These atoms must migrate across the surface to find a crystalographically favorable site.

    這些原子必須通過表面遷移以找到一個結晶學上合適的位置。
  12. It is first suggested that the evaporation of mixtures has three steps, which are the transfer of volatile components to the surface from the inside, the transfer of the components to gas boundary - layer from the surface and the transfer of them to the environment from the boundary - layer

    本文首次在原油蒸發中提出混合液體蒸發三步驟機理，即蒸發由液體內部易揮發組分向液體表面的遷移、揮發分子從液體表面進入氣相邊界層、揮發分子從邊界層向環境遷移三步組成。
  13. Thought the pan evaporation, it has been found that the evaporation of shengli crude oil is controlled by the first step and the effect of wind velocity is small. the prediction equation is dw / dt ^ k d ? 2 a ju, y hct / t, which is related with the liquid characters and states ( e. g. thickness, area, viscosity ) and is independent of wind speed

    2 、實驗結果表明，勝利原油蒸發由第一步即蒸發由液體內部易揮發組分向液體表面的遷移來控制，因此風速影響很小，建立速率方程時不必考慮風速，只需考慮液體本身的性質和狀態（如厚度、表面積、粘度等） ，速率方程可寫為： dw dt = kd4 ? 』 a嚴t 。
  14. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  15. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  16. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  17. Two typical examples analyses are conducted for the average conditions both of winter and summer climates under vapor diffusion and air leakage. a further discussion is set forth to determine the main factors that the moisture accumulation in wall is affected. it is found that the factors are the relative humidity at the wall surface, indoor temperature, permeability, air pressure difference and rate of the infiltrative or exfiltrative airflow

    本文首先研究了墻體內的濕氣遷移過程，詳細分析了濕積累現象形成的原因，通過對夏、冬兩季平均氣候下墻內溫度、水蒸氣壓力、相對濕度及濕積累在僅有擴散、擴散與空氣滲透同時存在等情況所作的具體計算，發現墻內、外表面的相對濕度、室內溫度、滲透率、空氣壓差以及空氣的滲流速度是影響墻內濕積累的主要因素。
  18. There are distinct changes about shifts or intensity in bulk plasmon, surface plasmon, and interband electron transitions losses as a result of oxidation of specimens, and adsorption and oxidation processes can be studied through these changes. at room temperature, the formation of oxide layers on uranium and uranium - niobium alloys were found to occur rapidly upon exposure to oxygen, and the resultant oxide in each case was near - stoichiometric uo2. due to formation of niobium oxide in uranium - niobium alloys, the diffusion of o ~ ( - ) ( o ~ ( 2 - ) ) and u ~ ( 4 + ) in the interface region was prevented, and the corrosion resistance of uranium - niobium alloys to oxygen is greatly enhanced by alloying with niobium

    研究結果表明：清潔表面鈮和鈾的體等離子體振蕩所造成的電子能量損失的實驗值與理論計算值較為符合；隨著氧化程度的加劇，表面等離子體（ sp ） 、體等離子體（ bp ）以及價帶電子躍遷所造成電子能量損失的譜峰發生了明顯的連續偏移或強度的變化，這些變化可以用來分析鈾及鈾鈮合金的初始氧化過程；室溫下，鈾及鈾鈮合金很容易與氧作用，最終結果，鈾僅氧化為二氧化鈾，另外，在鈾鈮合金氧化過程中，因為有鈮的氧化物存在，不利於氧和鈾在界面擴散，增強了鈾鈮合金抗氧化性能； eels能獲得樣品表面的信息比aes更為表面，更為靈敏，但由於eels的譜線過于集中，主要在幾十ev以內，也有不容易區別和解譜的不足。
  19. So next work should be to study the crystallization mechanisnu nickel contents and mobility after the nickel - silicide on the surface is removed

    對此方法的晶化機理和對鎳的含量及去除表面層的鎳化合物后遷移率的大小測試分析將在下一步工作中展開。
  20. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
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