變閾力的 的英文怎麼說
中文拼音 [biànyùlìde]
變閾力的
英文
bathmic-
The threshold value of soil water contents for photosynthesis and stomatal resistance is about 14 ( 0g ), i. e., 60 65 of field capacity
棉花的光合速率和氣孔阻力隨土壤含水量變化的閾值約在14土壤含水量水平，該閾值相當於田間持水量的60 65 。If grazing stress reached a threshold, genetic diversity of population emerged a transition point, with genetic diversity increased
當放牧壓力達到一個閾值時種群的遺傳多樣性有一個躍變點，遺傳多樣性又有增加的趨勢。With the frequency division of wpd, etm uses shannon entropy as the criterion of determining whether or not dsi exist in certain wpd tree nodes and interference are suppressed successfully. lots of simulation data, lab data and on - site data have indicated that etm works with good efficiency, without pre - knowing of dsi information, extracts the phase of pd pulses accurately and can calibrate quantity of single type discharge
大量的模擬數據、實驗室實測數據以及現場實測數據處理結果表明，小波包變換熵閾值法抑制干擾能力強，無需事先確定干擾的分佈，能夠準確檢測局部放電信號的相位信息，對于單一的放電類型，可以確定放電量的大小。The sort, material composite, structure properties and conduction mechanisms of eca ( electrical conductive adhesive ) were discussed in this paper. then three types of ega specimens were designed and made, on which temperature cycles test from - 55 ? to + 125 ? and thermal aging at + 125 ? were carried out. changes of the adhesive strength, eca ' s bulk resistance and contact resistance under the environment stress were summarized and a detailed evaluation on these specimens was given
本文在全面闡述導電膠的分類組成、物理結構、導電機理的基礎上，設計並製作了三批導電膠樣品，通過對樣品進行長時間的- 55 ? ? + 125溫度循環和125高溫存儲試驗，總結了導電膠粘接強度、體電阻和接觸電阻在環境應力下的變化規律，對三類樣品的長期可靠性做出了全面的評價，並結合導電膠電阻率和「穿流閾值」的計算機模擬，給出了提高導電膠可靠性和電導率的建議，介紹了國內外在高電導率高可靠性導電膠研製方面的一些最新進展。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高Erosion damage decreases rock load area, after defining damage variable, the damage stress in rock can be calculated by the method bring forward by lemaitre conveniently. for surrounding rock of a deep buried tunnel under the condition of drained, its seepage character is not only controlled by the high stress in rock, but also influenced by the development of erosion damage. in the whole course of rock " s deformation and failure, its seepage character decreases with the increment of stress in elastic stage, while " increases with the development of failure
巖樣中全應力?應變三軸滲透試驗過程中的典型表現為隨著應力的增加，巖體內的空隙和裂紋受載閉合，滲透性降低，應力達到一定閾西南交通大學鷹士研究生學位論文第11頁值后，巖體內部裂紋發生擴展和歸並，滲透性增強；同樣，地下水的動、靜壓力作用對裂紋的擴展和歸並也起著促進作用。The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions
主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。Three connected comparators each with a comparison potentiometer enable the setting of three different switching thresholds, which correspond to a certain loading of the connected strain gauge force transducers
三個相連的比較電路每一個都有一個比較電壓計，可以根據所連接的應變力傳感器的荷載設定三個不同的開關閾值。To solve this problem, some researches on denoising for the nonstationary and noisy - strong signal are carried out in this paper. combining hilbert - huang transform ( hht ) which has been proved to be more valid in the aspect of time - frequency analysis, with mature wavelet transform ( wt ) threshold theory, an emd - based wavelet threshold denoising algorithm is presented
針對這個問題，本文也開展了對信噪比較低的含噪非平穩信號的去噪研究工作，並將具有比小波變換更強時頻分析能力的希爾伯特?黃變換（ hht ）與成熟的小波閾值理論相結合，提出基於emd的小波閾值去噪演算法。By studying threshold - broken rule, chaos rule, jumping rule and least resistance rule, the paper discusses the approach, direction, intensity of risk conduction to deepen the understanding of transmitting mechanism of enterprise risks
文章從企業風險傳導的閾值突變規律、混沌規律、跳躍規律和最小阻力規律四個方面深入分析了企業風險傳導的途徑、方向、強度等特徵，進而深化了對企業風險傳導機理的認識。分享友人