負偏壓 的英文怎麼說

中文拼音 [fùpiānyā]
負偏壓 英文
back bias voltage; negative bias
  • 負 : Ⅰ名詞1 （負擔） burden; load 2 （虧損） loss 3 （失敗） defeat Ⅱ動詞1 [書面語] （背） carry on th...
  • 偏 : Ⅰ形容詞1 （不正; 歪斜） inclined to one side; slanting; leaning 2 （只側重一面） partial; prejudi...
  • 壓 : 壓構詞成分。
  1. And these limit the diamond film application. in order to grow high quality diamond film, this experiment using cleanout and negative bias to improve nucleus

    為了得到高質量的金剛石薄膜本研究對于石英玻璃的表面進行了清洗並用了負偏壓增強形核的方法。
  2. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。
  3. In a ccp system, there is a discontiguous characteristic on tuned substrate self - bias. when the impedance between substrate and ground was made increasingly inductive, a large negative dc potential developed on the substrate

    在ccp （ capacitivecouplingplasma ）中調諧基片偏壓具有不連續變化現象，當基片之間為漸增的感抗時，基片上會產生漸增的負偏壓。
  4. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  5. Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure

    工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。
  6. At 200v of substrate negative bias voltage and 300w of rf power, the content of cubic phase in bn films reaches 92. 8 %

    當負偏壓為200v ，功率為300w時，薄膜中立方相的含量達到92 . 8 。
  7. For obtaining cbn thin films, it is necessary that substrate negative bias voltage is not lower than 90v and r. f power is not lower than 200w

    若要得到立方氮化硼薄膜，負偏壓不能低於90v ，功率不能低於200w 。
  8. The kapton undergo dramatically degradation and the oxide coating of al or si has excellent properties for ao effects in the course of atomic oxygen beam exposures

    當負偏壓為200v ，鍍膜時間為10min時得到的防護膜與kapton膜的結合力最好。
  9. Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn

    襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。
  10. The enhancement of water wettability, better optical transparency, and higher wear resistance have been found after the samples were treated under high rf power, bias voltage and gas pressure conditions

    在較高射頻功率、基板負偏壓、反應氣體壓強狀態下制備膜層的潤濕性、耐磨損性較好，而光學透過率較低。
  11. About effect of plasma flow guiding, the 90 - inclined cnts was successfully modified to 45 - inclined cnts by positioning a negatively - biased metal plate above the si substrate surface to vary the plasma flow pattern

    關于電漿導流板之效應，藉由通在基材上放置具有負偏壓之導流板可以控制電漿之流向，使原本與基材夾90 ?角成長之碳奈米管可藉此令其與基材夾45 ?角成長。
  12. In order to obtain similar deposition condition, very different bias must be applied to the substrate when the grounding of the arc source is different. at last, carbon films were deposited and their properties were measured

    分析了這種現象產生的原因以及不同接地方式對沉積薄膜的影響，即當弧源接地狀態不同時，要獲得相似的沉積條件，給基片臺施加的負偏壓應有所不同。
  13. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  14. In order to do the research works above better, we must can precisely control the width of the quasi - 1d channel and the cut off point, and also must precisely inspire current in the 2deg, so we designed the 2 channel high precision and high stability voltage source, one channel can supply the minus voltage to the split - gate, and the other one can supply the offset voltage between the source and drain pole

    為了進行上述研究，必須能夠精確的控制準一維電子通道的寬度和鉗斷，以及精確的在2deg上激勵電流，由此我們設計研發了給分裂門加負偏壓和給準一維電子通道加源漏偏壓的兩路高精度高穩定性饋源。
  15. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  16. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  17. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  18. Mechanical folding test was applied to analyze the crack behavior of dlc films. the results show that the crack appears due to the mechanical stress and the initiation and propagations of the cracks may be suppressed with higher rf power, bias voltage and gas pressure

    機械彎折試驗結果表明，沉積成膜過程中，應選擇較高的氣壓、基板負偏壓、射頻功率以及適量的n摻雜來制備抗往復彎折的、耐失效性能優越的膜層。
  19. Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage

    研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。
  20. The experimental evidences indicated that three deposition parameters, i. e., energy density of laser, rf plasma power and substrate negative bias played key roles in the growth of the c - bn films at room temperature. on this basis, the explanation of formation process and mechanism of c - bn film was given

    通過分析各個沉積參數在薄膜生長中的作用，證明三個沉積參數：激光能量密度、射頻功率和基底負偏壓是室溫下生長立方氮化硼薄膜的關鍵因素，並在此基礎上初步解釋了立方氮化硼薄膜的形成過程及機理。
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